| Review of silicon carbide processing for power MOSFET C Langpoklakpam, AC Liu, KH Chu, LH Hsu, WC Lee, SC Chen, CW Sun, ... Crystals 12 (2), 245, 2022 | 130 | 2022 |
| Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang, YW Huang, ... Micromachines 12 (10), 1159, 2021 | 63 | 2021 |
| State-of-the-Art β-Ga2O3 Field-Effect Transistors for Power Electronics AC Liu, CH Hsieh, C Langpoklakpam, KJ Singh, WC Lee, YK Hsiao, ... ACS omega 7 (41), 36070-36091, 2022 | 51 | 2022 |
| The evolution of manufacturing technology for GaN electronic devices AC Liu, PT Tu, C Langpoklakpam, YW Huang, YT Chang, AJ Tzou, ... Micromachines 12 (7), 737, 2021 | 49 | 2021 |
| Vertical GaN MOSFET power devices C Langpoklakpam, AC Liu, YK Hsiao, CH Lin, HC Kuo Micromachines 14 (10), 1937, 2023 | 19 | 2023 |
| Gateway towards recent developments in quantum dot-based light-emitting diodes YM Huang, KJ Singh, TH Hsieh, C Langpoklakpam, TY Lee, CC Lin, Y Li, ... Nanoscale 14 (11), 4042-4064, 2022 | 18 | 2022 |
| Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition RH Horng, A Sood, S Rana, N Tumilty, FG Tarntair, C Langpoklakpam, ... Materials Today Advances 18, 100382, 2023 | 13 | 2023 |
| Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies CY Huang, XY Tsai, FG Tarntair, C Langpoklakpam, T Sao Ngo, PJ Wang, ... Materials Today Advances 22, 100499, 2024 | 2 | 2024 |
| Analysis of breakdown voltage for GaN MIS-HEMT with various composite field plate configurations and passivation layers C Langpoklakpam, YK Hsiao, EY Chang, CH Lin, HC Kuo Solid-State Electronics 216, 108930, 2024 | 1 | 2024 |
| Effects of Drain Field Plate Structure and Passivation Dielectrics on Breakdown Voltage of GaN MISHEMT C Langpoklakpam, YK Hsiao, CH Lin, HC Kuo 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2023 | 1 | 2023 |
| Review of Silicon Carbide Processing for Power MOSFET. Crystals 2022, 12, 245 C Langpoklakpam, AC Liu, KH Chu, LH Hsu, WC Lee, SC Chen, CW Sun, ... s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2022 | 1 | 2022 |
| A Novel High-Performance Leakage-Tolerant Keeper Domino Circuit for Wide Fan-In Gates C Langpoklakpam, SR Ghimiray, PK Dutta Advances in Communication, Devices and Networking: Proceedings of ICCDN 2018 …, 2019 | 1 | 2019 |
| Impact of In and Ga Fractions in Lattice-Matched InAlGaN Barrier Layer on Performance of InAlGaN/GaN MISHEMT C Langpoklakpam, YK Hsiao, CH Lin, EY Chang, HC Kuo 2024 International VLSI Symposium on Technology, Systems and Applications …, 2024 | | 2024 |
| Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs C Langpoklakpam, AC Liu, NJ You, MH Kao, WH Huang, CH Shen, ... Micromachines 14 (3), 576, 2023 | | 2023 |
| Improving Mini-LED Pattern Quality by Using Distributed Bragg Reflector and Digital Twin Technology HCK Shu-Hsiu Chang, Che-Hsuan Huan, Chatherine Langpoklakpam, Konthoujam ... Crystals 12 (4), 529, 2022 | | 2022 |
