متابعة
Oliver Brandt
Oliver Brandt
Senior scientist, Paul-Drude-Institut für Festkörperelektronik
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عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes‏
P Waltereit, O Brandt, A Trampert, HT Grahn, J Menniger, M Ramsteiner, ...‏
nature 406 (6798), 865-868, 2000‏
21962000
Colossal magnetic moment of Gd in GaN‏
S Dhar, O Brandt, M Ramsteiner, VF Sapega, KH Ploog‏
Physical Review Letters 94 (3), 037205, 2005‏
4422005
Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy‏
S Ghosh, P Waltereit, O Brandt, HT Grahn, KH Ploog‏
Physical Review-Section B-Condensed Matter 65 (7), 75202-75202, 2002‏
3462002
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films‏
VM Kaganer, O Brandt, A Trampert, KH Ploog‏
Physical Review B—Condensed Matter and Materials Physics 72 (4), 045423, 2005‏
2632005
Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications‏
S Breuer, C Pfuller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ...‏
Nano letters 11 (3), 1276-1279, 2011‏
2512011
Direct measurement of local lattice distortions in strained layer structures by HREM‏
R Bierwolf, M Hohenstein, F Phillipp, O Brandt, GE Crook, K Ploog‏
Ultramicroscopy 49 (1-4), 273-285, 1993‏
2471993
Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy‏
S Dhar, O Brandt, A Trampert, L Daweritz, KJ Friedland, KH Ploog, ...‏
Applied physics letters 82 (13), 2077-2079, 2003‏
2462003
Surface reconstructions of zinc-blende GaN/GaAs (001) in plasma-assisted molecular-beam epitaxy‏
O Brandt, H Yang, B Jenichen, Y Suzuki, L Däweritz, KH Ploog‏
Physical Review B 52 (4), R2253, 1995‏
2141995
Direct comparison of catalyst-free and catalyst-induced GaN nanowires‏
C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ...‏
Nano Research 3, 528-536, 2010‏
2062010
Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence‏
J Menniger, U Jahn, O Brandt, H Yang, K Ploog‏
Physical Review B 53 (4), 1881, 1996‏
200*1996
Impact of nucleation conditions on the structural and optical properties of M-plane GaN (1-100) grown on γ-LiAlO2‏
YJ Sun, O Brandt, U Jahn, TY Liu, A Trampert, S Cronenberg, S Dhar, ...‏
Journal of applied physics 92 (10), 5714-5719, 2002‏
1952002
High p‐type conductivity in cubic GaN/GaAs (113) A by using Be as the acceptor and O as the codopant‏
O Brandt, H Yang, H Kostial, KH Ploog‏
Applied physics letters 69 (18), 2707-2709, 1996‏
1901996
Growth of M-plane GaN (1-100) on γ-LiAlO2(100)‏
P Waltereit, O Brandt, M Ramsteiner, R Uecker, P Reiche, KH Ploog‏
Journal of crystal growth 218 (2), 143-147, 2000‏
1892000
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K‏
S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten‏
Physical Review B—Condensed Matter and Materials Physics 72 (24), 245203, 2005‏
1822005
Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC (0001)‏
P Waltereit, O Brandt, A Trampert, M Ramsteiner, M Reiche, M Qi, ...‏
Applied physics letters 74 (24), 3660-3662, 1999‏
1621999
Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy‏
M Giehler, M Ramsteiner, O Brandt, H Yang, KH Ploog‏
Applied physics letters 67 (6), 733-735, 1995‏
1581995
Luminescence associated with stacking faults in GaN‏
J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn‏
Journal of Physics D: Applied Physics 47 (42), 423001, 2014‏
1552014
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments‏
U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ...‏
Physical Review B—Condensed Matter and Materials Physics 85 (4), 045323, 2012‏
1512012
Polarity in GaN and ZnO: Theory, measurement, growth, and devices‏
J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ...‏
Applied Physics Reviews 3 (4), 2016‏
1492016
Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons‏
O Brandt, C Pfüller, C Chèze, L Geelhaar, H Riechert‏
Physical Review B—Condensed Matter and Materials Physics 81 (4), 045302, 2010‏
1492010
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مقالات 1–20