| Phase-change materials for intelligent temperature regulation R Guo, L Shan, Y Wu, Y Cai, R Huang, H Ma, K Tang, K Liu Materials Today Energy 23, 100888, 2022 | 58 | 2022 |
| High photosensitivity light-controlled planar ZnO artificial synapse for neuromorphic computing W Xiao, L Shan, H Zhang, Y Fu, Y Zhao, D Yang, C Jiao, G Sun, Q Wang, ... Nanoscale 13 (4), 2502-2510, 2021 | 36 | 2021 |
| Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices C Su, L Shan, D Yang, Y Zhao, Y Fu, J Liu, G Zhang, Q Wang, D He Microelectronic Engineering 247, 111600, 2021 | 6 | 2021 |
| In Materia Neuron Spiking Plasticity for Sequential Event Processing Based on Dual‐Mode Memristor L Shan, Z Wang, L Bao, S Bao, Y Qin, Y Ling, G Bai, J Robertson, Y Cai, ... Advanced Intelligent Systems 4 (8), 2100264, 2022 | 5 | 2022 |
| Hybrid-FE-Layer FeFET with high linearity and endurance toward on-chip CIM by array demonstration Y Zhou, H Shao, R Zhu, W Luo, W Huang, L Shan, R Huang, K Tang IEEE Electron Device Letters 45 (2), 276-279, 2023 | 4 | 2023 |
| A Logic-Process Compatible RRAM with 15.43 Mb/mm2 Density and 10years@150°C retention using STI-less Dynamic-Gate and Self-Passivation Sidewall Q Wang, Y Yang, Z Wang, S Bao, J Sun, L Shan, L Bao, Y Gao, H Zhang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 3 | 2023 |
| Hybrid-Domain In-Memory Polynomial Acceleration based on 40nm RRAM Multi-Core Chip for Machine Vision Calibration L Bao, Z Wang, Q Wang, Y Yang, Y Gao, L Shan, J Sun, Y Yang, Y Ling, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 3 | 2023 |
| Experimental demonstration of high-order in-memory computing based on IGZO charge trapping RAM array for polynomial regression acceleration L Bao, Z Wang, Y Shi, Y Ling, Y Yang, L Shan, SB Sin, C Wang, Q Zheng, ... 2022 International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2022 | 3 | 2022 |
| Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network L Wu, Z Wang, L Bao, L Shan, Z Yu, Y Yang, S Zhang, G Bai, C Wang, ... Science China Information Sciences 67 (2), 122404, 2024 | 2 | 2024 |
| A high-speed and self-calibratable true random number generator (TRNG) based on unified selector-RRAM Y Qin, Z Wang, J Gao, L Shan, Q Wang, Y Cai, R Huang 2023 Silicon Nanoelectronics Workshop (SNW), 65-66, 2023 | 2 | 2023 |
| Unified insulator-metal transition and resistive switching device for memory, computing and sensing applications Y Cai, Z Wang, L Bao, L Wu, L Shan, R Huang 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit …, 2022 | 2 | 2022 |
| Non-Linear Resistive Switching Characteristics in HFO2-Based RRAM with Low-Dimensional Material Engineered Interface L Shan, Z Wang, L Wu, S Bao, Y Chen, K Tang, Y Cai, R Huang 2021 China Semiconductor Technology International Conference (CSTIC), 1-3, 2021 | 2 | 2021 |
| ASAP: An efficient and reliable programming algorithm for multi-level RRAM cell J Sun, Z Wang, J Gao, L Shan, Q Wang, Y Yang, Y Cai, R Huang 2024 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2024 | 1 | 2024 |
| A high-speed true random number generator based on unified selector-RRAM Y Qin, Z Wang, Y Yang, L Shan, Q Wang, L Bao, J Robertson, Y Cai, ... IEEE Electron Device Letters 44 (12), 1967-1970, 2023 | 1 | 2023 |
| Selective Laser Doping and Dedoping for Phase Engineering in Vanadium Dioxide Film H Ma, Y Li, J Hao, Y Wu, R Shi, R Peng, L Shan, Y Cai, K Tang, K Liu, ... Small Methods 9 (1), 2400832, 2025 | | 2025 |
| Dual‐Mode Flexible Parylene‐C‐Based In‐Memory Tactile Sensory Device with CMOS Compatibility C Ban, Z Wang, S Zhang, L Shan, Q Chen, Y Cai, R Huang Advanced Electronic Materials, 2400532, 2024 | | 2024 |
| Monolithically 3D Integrated Memristive Bayesian Neural Network for Intelligent Motion Planning L Shan, L Wu, Z Wang, R Xie, C Ban, G Yang, Q Wang, Y Li, H Ma, L Bao, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| First Demonstration of Masked Polynomial Multiplier Based on 40nm 1TG1R RRAM Secure Chip for Lattice-Based Cryptography J Sun, Z Wang, H Gu, L Bao, Q Wang, S Bao, L Shan, L Liang, Y Cai, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| Design of an RRAM In-Memory Computing Scheme for Target Tracking Applications H Gu, Z Wang, J Li, H Ding, L Shan, L Bao, L Liang, Y Cai, R Huang 2024 IEEE International Conference on Integrated Circuits, Technologies and …, 2024 | | 2024 |
| Impact of Different MAC Schemes on Computing in Memory Based on 1T1R Array R Xie, G Yang, Z Wang, L Shan, J Li, C Ban, L Bao, L Liang, C Wang, ... 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit …, 2024 | | 2024 |
