| Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors P Fernandes Paes Pinto Rocha, L Vauche, P Pimenta-Barros, S Ruel, ... Energies 16 (7), 2978, 2023 | 19 | 2023 |
| Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM T Spelta, M Veillerot, E Martinez, D Mariolle, R Templier, N Chevalier, ... Solid-State Electronics 208, 108743, 2023 | 7 | 2023 |
| Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT PFPP Rocha, L Vauche, B Mohamad, W Vandendaele, E Martinez, ... Power Electronic Devices and Components 4, 100033, 2023 | 6 | 2023 |
| Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations C Piotrowic, B Mohamad, PFPP Rocha, N Malbert, S Ruel, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 4 | 2023 |
| Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures T Spelta, E Martinez, M Veillerot, P Fernandes Paes Pinto Rocha, ... Surface and Interface Analysis 56 (7), 399-407, 2024 | 3 | 2024 |
| Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors PFPP Rocha, M Zeghouane, S Boubenia, F Bassani, L Vauche, ... Advanced Electronic Materials 10 (3), 2300528, 2024 | 3 | 2024 |
| Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach T Spelta, M Veillerot, E Martinez, N Chevalier, D Mariolle, R Templier, ... Journal of Vacuum Science & Technology B 41 (3), 2023 | 3 | 2023 |
| Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface in Gate-First MOSc-HEMT Process Flow PFPP Rocha, L Vauche, B Mohamad, W Vandendaele, E Martinez, ... GaN Marathon, 2022 | 2 | 2022 |
| Optimization of dielectric/GaN interface for MIS gate power devices PFPP Rocha Université Grenoble Alpes [2020-....], 2023 | 1 | 2023 |
| Post-deposition annealing challenges for ALD Al0. 5Si0. 5Ox/n-GaN MOS devices PFPP Rocha, L Vauche, M Bedjaoui, S Cadot, B Mohamad, ... Solid-State Electronics 209, 108780, 2023 | 1 | 2023 |
| Synthesis of AlOxNy thin films using a two-step PE-ALD process M Zeghouane, P Fernandes Paes Pinto Rocha, S Boubenia, F Bassani, ... AIP Advances 13 (8), 2023 | 1 | 2023 |
| Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment. V Maurya, D Alquier, H El Rammouz, PFPP Rocha, E Martinez, ... GaN Marathon 2024, 2024 | | 2024 |
| L'HAXPES de laboratoire pour les nouvelles technologies en microélectronique E Martinez, T Spelta, PFPP Rocha, J Courtin, M Veillerot, L Vauche, ... JNSPE 2023-Les Journées Nationales des Spectroscopies de Photoemission, 2023 | | 2023 |
| Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications B Mohamad, C Le Royer, F Rigaud-Minet, C Piotrowicz, PFPP Rocha, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | | 2023 |
| Laboratory HAXPES of GaN structures for power electronic E Martinez, T Spelta, PFPP Rocha, M Veillerot, B Hyot, W Vandendaele, ... HAXPES 2022-The 9th International Conference on Hard X-ray Photoelectron …, 2022 | | 2022 |
| Caractérisation de structures GaN par HAXPES pour l'électronique de puissance T Spelta, E Martinez, M Veillerot, PFPP Rocha, S Boubenia, L Vauche, ... JNSPE 2022-Journées Nationales des Spectroscopies de PhotoEmission, 2022 | | 2022 |
Laura VaucheCEAبريد إلكتروني تم التحقق منه على cea.fr
