| High-speed black phosphorus field-effect transistors approaching ballistic limit X Li, Z Yu, X Xiong, T Li, T Gao, R Wang, R Huang, Y Wu Science advances 5 (6), eaau3194, 2019 | 92 | 2019 |
| New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability Z Yu, J Zhang, R Wang, S Guo, C Liu, R Huang 2017 IEEE International Electron Devices Meeting (IEDM), 7.2. 1-7.2. 4, 2017 | 64 | 2017 |
| Variability-and reliability-aware design for 16/14nm and beyond technology R Huang, XB Jiang, SF Guo, PP Ren, P Hao, ZQ Yu, Z Zhang, YY Wang, ... 2017 IEEE international electron devices meeting (IEDM), 12.4. 1-12.4. 4, 2017 | 37 | 2017 |
| Towards reliability-aware circuit design in nanoscale FinFET technology:—New-generation aging model and circuit reliability simulator S Guo, R Wang, Z Yu, P Hao, P Ren, Y Wang, S Liao, C Huang, T Guo, ... 2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 780-785, 2017 | 35 | 2017 |
| On the trap locations in bulk finFETs after hot carrier degradation (HCD) Z Yu, Z Zhang, Z Sun, R Wang, R Huang IEEE Transactions on Electron Devices 67 (7), 3005-3009, 2020 | 29 | 2020 |
| Understanding hot carrier reliability in FinFET technology from trap-based approach R Wang, Z Sun, YY Liu, Z Yu, Z Wang, X Jiang, R Huang 2021 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2021 | 28 | 2021 |
| Hot carrier degradation-induced dynamic variability in FinFETs: Experiments and modeling Z Yu, Z Sun, R Wang, J Zhang, R Huang IEEE Transactions on Electron Devices 67 (4), 1517-1522, 2020 | 27 | 2020 |
| Investigation on the lateral trap distributions in nanoscale MOSFETs during hot carrier stress Z Sun, Z Yu, Z Zhang, J Zhang, R Wang, P Lu, R Huang IEEE Electron Device Letters 40 (4), 490-493, 2019 | 26 | 2019 |
| Non-universal temperature dependence of hot carrier degradation (HCD) in FinFET: New observations and physical understandings Z Yu, R Wang, P Hao, S Guo, P Ren, R Huang 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM …, 2018 | 17 | 2018 |
| New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits J Zou, R Wang, S Guo, M Luo, Z Yu, X Jiang, P Ren, J Wang, J Liu, J Wu, ... 2014 IEEE International Electron Devices Meeting, 34.5. 1-34.5. 4, 2014 | 16 | 2014 |
| Understanding Hot Carrier Degradation and Variation in FinFET Technology R Wang, Z Yu, J Zhang, Z Sun, Z Zhang, R Huang 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020 | 6 | 2020 |
| Investigation of DIBL degradation in nanoscale FinFETs under various hot carrier stresses Z Sun, Z Yu, R Wang, J Zhang, Z Zhang, P Lu, R Huang 2018 14th IEEE International Conference on Solid-State and Integrated …, 2018 | 6 | 2018 |
| New observations on the two-stage degradation of hot carrier reliability in high-k/metal-gate MOSFETs Z Yu, S Guo, R Wang, P Hao, R Huang 2017 IEEE 24th International Symposium on the Physical and Failure Analysis …, 2017 | 6 | 2017 |
| A new efficient method for characterizing time constants of switching oxide traps S Guo, P Ren, R Wang, Z Yu, M Luo, X Zhang, R Huang 2014 IEEE International Reliability Physics Symposium, XT. 14.1-XT. 14.4, 2014 | 5 | 2014 |
| On The Contribution of Secondary Holes in Hot-Carrier Degradation–a Compact Physics Modeling Perspective SE Tyaginov, E Bury, A Grill, Z Yu, A Makarov, A De Keersgieter, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 4 | 2023 |
| Body bias dependence of hot carrier degradation (HCD) in advanced FinFET technology J Zhang, Z Sun, R Wang, Z Yu, P Ren, R Huang 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM …, 2018 | 4 | 2018 |
| New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology P Ren, C Liu, S Wan, J Zhang, Z Yu, N Liu, Y Sun, R Wang, C Zhan, ... 2018 IEEE International Reliability Physics Symposium (IRPS), P-CR. 3-1-P-CR …, 2018 | 2 | 2018 |
| Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range S Tyaginov, E Bury, A Grill, Z Yu, A Makarov, A De Keersgieter, M Vexler, ... Micromachines 14 (11), 2018, 2023 | 1 | 2023 |
| New Insights into the Saturation Behavior of the Hot Carrier Degradation in STI-Based N-Type LDMOS Z Yu, D Gao, Y Sun, J Huang 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit …, 2024 | | 2024 |
| Method of bias temperature instability calculation and prediction for MOSFET and FinFET A Chen, J Xie, SY Liao, C Huang, T Guo, Y Li, R Wang, GUO Shaofeng, ... US Patent 10,621,386, 2020 | | 2020 |
Runsheng WangPeking Universityبريد إلكتروني تم التحقق منه على pku.edu.cn
