متابعة
Y. X. Ma
Y. X. Ma
بريد إلكتروني تم التحقق منه على bit.edu.cn
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
A study on pentacene organic thin-film transistor with different gate materials on various substrates
CY Han, YX Ma, WM Tang, XL Wang, PT Lai
IEEE Electron Device Letters 38 (6), 744-747, 2017
282017
Advances in two-dimensional heterostructures by mono-element intercalation underneath epitaxial graphene
S Wu, Q Zhang, H Yang, Y Ma, T Zhang, L Liu, HJ Gao, Y Wang
Progress in Surface Science 96 (3), 100637, 2021
212021
Influence of gate doping concentration on the characteristics of amorphous InGaZnO thin-film transistors with HfLaO gate dielectric
H Su, YX Ma, PT Lai, WM Tang
IEEE Electron Device Letters 40 (12), 1953-1956, 2019
202019
High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric
YX Ma, CY Han, WM Tang, PT Lai
Applied Physics Letters 111 (2), 2017
192017
Gate screening on remote phonon scattering for pentacene organic TFTs: Holes versus electrons
YX Ma, H Su, WM Tang, PT Lai
IEEE Electron Device Letters 40 (6), 893-896, 2019
172019
Single β-Ga2O3 nanowire based lateral FinFET on Si
S Xu, L Liu, G Qu, X Zhang, C Jia, S Wu, Y Ma, YJ Lee, G Wang, JH Park, ...
Applied Physics Letters 120 (15), 2022
162022
Effects of gate electron concentration on the performance of pentacene organic thin-film transistors
YX Ma, CY Han, WM Tang, PT Lai
IEEE Electron Device Letters 39 (7), 963-966, 2018
162018
Reduced screening of remote phonon scattering in thin-film transistors caused by gate-electrode/gate-dielectric interlayer
YX Ma, WM Tang, PT Lai
Applied Physics Letters 117 (14), 2020
122020
Effects of a gate-electrode/gate-dielectric interlayer on carrier mobility for pentacene organic thin-film transistors
YX Ma, WM Tang, PT Lai
IEEE Electron Device Letters 39 (10), 1516-1519, 2018
82018
A study on organic thin-film transistors using Hf–La oxides with different la contents as gate dielectrics
CY Han, YX Ma, WM Tang, XL Wang, PT Lai
IEEE Transactions on Electron Devices 65 (3), 1107-1112, 2018
82018
Stacked lateral gate-all-around metal–oxide–semiconductor field-effect transistors and their three-dimensional integrated circuits
S Ye, L Liu, Y Ma, Y Wang
Silicon 15 (5), 2467-2478, 2023
72023
Plasmon-phonon resonance at gate-electrode/gate-dielectric interface on carrier mobility of organic TFTs with high-k gate dielectrics
YX Ma, H Su, WM Tang, PT Lai
Applied Surface Science 565, 150374, 2021
72021
High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb
Y Ma, WM Tang, C Han, PT Lai
physica status solidi (a) 215 (5), 1700609, 2018
62018
1-selector 1-memristor configuration with multifunctional a-IGZO memristive devices fabricated at room temperature
JC Li, YX Ma, SH Wu, ZC Liu, PF Ding, D Dai, YT Ding, YY Zhang, ...
ACS applied materials & interfaces 16 (14), 17766-17777, 2024
52024
Low-temperature-processed high-performance pentacene OTFTs with optimal Nd-Ti oxynitride mixture as gate dielectric
YX Ma, PT Lai, WM Tang
Materials 15 (6), 2255, 2022
52022
Single β-Ga2O3 nanowire back-gate field-effect transistor
G Qu, S Xu, L Liu, M Tang, S Wu, C Jia, X Zhang, W Song, YJ Lee, J Xu, ...
Semiconductor Science and Technology 37 (8), 085009, 2022
42022
Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics
YX Ma, H Su, WM Tang, PT Lai
Journal of Vacuum Science & Technology B 41 (6), 2023
32023
NdxHf(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors
YX Ma, QH Wang, H Chen, PT Lai, WM Tang
physica status solidi (RRL)–Rapid Research Letters 17 (9), 2300049, 2023
32023
Low frequency noise in β-Ga2O3 based nanoelectronic devices
M Tang, L Liu, C Jia, S Wu, YJ Lee, G Wang, Y Ma, DW Jeon, JH Park, ...
Applied Physics Letters 123 (1), 2023
32023
Low-Threshold pentacene OTFT by using NdTaON gate dielectric and ITO gate electrode
YX Ma, XD Huang, PT Lai, WM Tang
Applied Surface Science 605, 154611, 2022
22022
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مقالات 1–20