A study on pentacene organic thin-film transistor with different gate materials on various substrates CY Han, YX Ma, WM Tang, XL Wang, PT Lai IEEE Electron Device Letters 38 (6), 744-747, 2017 | 28 | 2017 |
Advances in two-dimensional heterostructures by mono-element intercalation underneath epitaxial graphene S Wu, Q Zhang, H Yang, Y Ma, T Zhang, L Liu, HJ Gao, Y Wang Progress in Surface Science 96 (3), 100637, 2021 | 21 | 2021 |
Influence of gate doping concentration on the characteristics of amorphous InGaZnO thin-film transistors with HfLaO gate dielectric H Su, YX Ma, PT Lai, WM Tang IEEE Electron Device Letters 40 (12), 1953-1956, 2019 | 20 | 2019 |
High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric YX Ma, CY Han, WM Tang, PT Lai Applied Physics Letters 111 (2), 2017 | 19 | 2017 |
Gate screening on remote phonon scattering for pentacene organic TFTs: Holes versus electrons YX Ma, H Su, WM Tang, PT Lai IEEE Electron Device Letters 40 (6), 893-896, 2019 | 17 | 2019 |
Single β-Ga2O3 nanowire based lateral FinFET on Si S Xu, L Liu, G Qu, X Zhang, C Jia, S Wu, Y Ma, YJ Lee, G Wang, JH Park, ... Applied Physics Letters 120 (15), 2022 | 16 | 2022 |
Effects of gate electron concentration on the performance of pentacene organic thin-film transistors YX Ma, CY Han, WM Tang, PT Lai IEEE Electron Device Letters 39 (7), 963-966, 2018 | 16 | 2018 |
Reduced screening of remote phonon scattering in thin-film transistors caused by gate-electrode/gate-dielectric interlayer YX Ma, WM Tang, PT Lai Applied Physics Letters 117 (14), 2020 | 12 | 2020 |
Effects of a gate-electrode/gate-dielectric interlayer on carrier mobility for pentacene organic thin-film transistors YX Ma, WM Tang, PT Lai IEEE Electron Device Letters 39 (10), 1516-1519, 2018 | 8 | 2018 |
A study on organic thin-film transistors using Hf–La oxides with different la contents as gate dielectrics CY Han, YX Ma, WM Tang, XL Wang, PT Lai IEEE Transactions on Electron Devices 65 (3), 1107-1112, 2018 | 8 | 2018 |
Stacked lateral gate-all-around metal–oxide–semiconductor field-effect transistors and their three-dimensional integrated circuits S Ye, L Liu, Y Ma, Y Wang Silicon 15 (5), 2467-2478, 2023 | 7 | 2023 |
Plasmon-phonon resonance at gate-electrode/gate-dielectric interface on carrier mobility of organic TFTs with high-k gate dielectrics YX Ma, H Su, WM Tang, PT Lai Applied Surface Science 565, 150374, 2021 | 7 | 2021 |
High‐Performance Pentacene Organic Thin‐Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb Y Ma, WM Tang, C Han, PT Lai physica status solidi (a) 215 (5), 1700609, 2018 | 6 | 2018 |
1-selector 1-memristor configuration with multifunctional a-IGZO memristive devices fabricated at room temperature JC Li, YX Ma, SH Wu, ZC Liu, PF Ding, D Dai, YT Ding, YY Zhang, ... ACS applied materials & interfaces 16 (14), 17766-17777, 2024 | 5 | 2024 |
Low-temperature-processed high-performance pentacene OTFTs with optimal Nd-Ti oxynitride mixture as gate dielectric YX Ma, PT Lai, WM Tang Materials 15 (6), 2255, 2022 | 5 | 2022 |
Single β-Ga2O3 nanowire back-gate field-effect transistor G Qu, S Xu, L Liu, M Tang, S Wu, C Jia, X Zhang, W Song, YJ Lee, J Xu, ... Semiconductor Science and Technology 37 (8), 085009, 2022 | 4 | 2022 |
Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics YX Ma, H Su, WM Tang, PT Lai Journal of Vacuum Science & Technology B 41 (6), 2023 | 3 | 2023 |
NdxHf(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors YX Ma, QH Wang, H Chen, PT Lai, WM Tang physica status solidi (RRL)–Rapid Research Letters 17 (9), 2300049, 2023 | 3 | 2023 |
Low frequency noise in β-Ga2O3 based nanoelectronic devices M Tang, L Liu, C Jia, S Wu, YJ Lee, G Wang, Y Ma, DW Jeon, JH Park, ... Applied Physics Letters 123 (1), 2023 | 3 | 2023 |
Low-Threshold pentacene OTFT by using NdTaON gate dielectric and ITO gate electrode YX Ma, XD Huang, PT Lai, WM Tang Applied Surface Science 605, 154611, 2022 | 2 | 2022 |