| HfO₂-Based OxRAM Devices as Synapses for Convolutional Neural Networks D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ... Electron Devices, IEEE Transactions on 62 (8), 2494-2501, 2015 | 232* | 2015 |
| Resistive Memories for Ultra-Low-Power embedded computing design E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanović, D Garbin, ... Electron Devices Meeting (IEDM), 2014 IEEE International, 6.3. 1-6.3. 4, 2014 | 118 | 2014 |
| Variability-tolerant Convolutional Neural Network for Pattern Recognition Applications based on OxRAM Synapses D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ... Electron Devices Meeting (IEDM), 2014 IEEE International, 28.4. 1-28.4. 4, 2014 | 89 | 2014 |
| Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles S Clima, D Garbin, K Opsomer, NS Avasarala, W Devulder, I Shlyakhov, ... physica status solidi (RRL)–Rapid Research Letters 14 (5), 1900672, 2020 | 72 | 2020 |
| Spiking neural networks based on OxRAM synapses for real-time unsupervised spike sorting T Werner, E Vianello, O Bichler, D Garbin, D Cattaert, B Yvert, B De Salvo, ... Frontiers in neuroscience 10, 474, 2016 | 70 | 2016 |
| A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTezphase change material HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, ... 2012 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2012 | 70 | 2012 |
| Phase transitions in Ga–Sb phase change alloys S Raoux, AK König, HY Cheng, D Garbin, RW Cheek, JL Jordan‐Sweet, ... physica status solidi (b) 249 (10), 1999-2004, 2012 | 57 | 2012 |
| Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance D Garbin, W Devulder, R Degraeve, GL Donadio, S Clima, K Opsomer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2019 | 48 | 2019 |
| Design-technology co-optimization for OxRRAM-based synaptic processing unit A Mallik, D Garbin, A Fantini, D Rodopoulos, R Degraeve, J Stuijt, AK Das, ... 2017 Symposium on VLSI Technology, T178-T179, 2017 | 42 | 2017 |
| Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications G Piccolboni, G Molas, JM Portal, R Coquand, M Bocquet, D Garbin, ... 2015 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2015 | 39 | 2015 |
| Impact of PCM resistance-drift in neuromorphic systems and drift-mitigation strategy M Suri, D Garbin, O Bichler, D Querlioz, D Vuillaume, C Gamrat, ... 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2013 | 39 | 2013 |
| Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019 | 35 | 2019 |
| Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... IEEE Electron Device Letters 40 (8), 1269-1272, 2019 | 35 | 2019 |
| SEMICONDUCTOR CELL CONFIGURED TO PERFORM LOGIC OPERATIONS D Garbin, D Rodopoulos, P Debacker, P Raghavan US Patent App. 15/820,239, 2018 | 35 | 2018 |
| Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... 2019 Symposium on VLSI Technology, T238-T239, 2019 | 34 | 2019 |
| Resistive memory variability: A simplified trap-assisted tunneling model D Garbin, E Vianello, Q Rafhay, M Azzaz, P Candelier, B DeSalvo, ... Solid State Electronics 116, 126-132, 2016 | 33 | 2016 |
| GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ... IEEE Electron Device Letters 41 (2), 228-231, 2019 | 27 | 2019 |
| Material relaxation in chalcogenide OTS SELECTOR materials S Clima, D Garbin, W Devulder, J Keukelier, K Opsomer, L Goux, GS Kar, ... Microelectronic Engineering 215, 110996, 2019 | 24 | 2019 |
| Self-rectifying memory cell based on SiGeAsSe ovonic threshold switch T Ravsher, D Garbin, A Fantini, R Degraeve, S Clima, GL Donadio, ... IEEE Transactions on Electron Devices 70 (5), 2276-2281, 2023 | 22 | 2023 |
| Investigation of Cycle-to-Cycle Variability in HfO 2-Based OxRAM G Piccolboni, G Molas, D Garbin, E Vianello, O Cueto, C Cagli, B Traore, ... IEEE Electron Device Letters 37 (6), 721-723, 2016 | 22 | 2016 |
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