متابعة
Miaomiao Wang
Miaomiao Wang
بريد إلكتروني تم التحقق منه على us.ibm.com
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Channel geometry impact and narrow sheet effect of stacked nanosheet
CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ...
2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018
942018
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
T Yamashita, VS Basker, T Standaert, CC Yeh, T Yamamoto, K Maitra, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 14-15, 2011
802011
Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond
K Choi, H Jagannathan, C Choi, L Edge, T Ando, M Frank, P Jamison, ...
2009 Symposium on VLSI Technology, 138-139, 2009
77*2009
Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC–AC experimental conditions
N Parihar, U Sharma, RG Southwick, M Wang, JH Stathis, S Mahapatra
IEEE Transactions on Electron Devices 65 (1), 23-30, 2017
752017
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
732016
High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor
J Zhang, T Ando, CW Yeung, M Wang, O Kwon, R Galatage, R Chao, ...
2017 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2017
652017
Special reliability features for Hf-based high-/spl kappa/gate dielectrics
TP Ma, HM Bu, XW Wang, LY Song, W He, M Wang, HH Tseng, PJ Tobin
IEEE Transactions on Device and Materials Reliability 5 (1), 36-44, 2005
592005
Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, part-I: DC stress and recovery
N Parihar, RG Southwick, M Wang, JH Stathis, S Mahapatra
IEEE Transactions on Electron Devices 65 (5), 1699-1706, 2018
542018
Electrical properties and interfacial structure of epitaxial LaAlO3 on Si (001)
JW Reiner, A Posadas, M Wang, M Sidorov, Z Krivokapic, FJ Walker, ...
Journal of Applied Physics 105 (12), 2009
482009
Reliability challenges for the 10nm node and beyond
JH Stathis, M Wang, RG Southwick, EY Wu, BP Linder, EG Liniger, ...
2014 IEEE International Electron Devices Meeting, 20.6. 1-20.6. 4, 2014
472014
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm2 SRAM cell
K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, B Haran, A Kumar, T Adam, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 128-129, 2011
462011
Stacked Gate-All-Around Nanosheet pFET with Highly Compressive Strained Si1-xGex Channel
S Mochizuki, M Bhuiyan, H Zhou, J Zhang, E Stuckert, J Li, K Zhao, ...
2020 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2020
442020
Reliability of advanced high-k/metal-gate n-FET devices
JH Stathis, M Wang, K Zhao
Microelectronics Reliability 50 (9-11), 1199-1202, 2010
392010
FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node
Q Liu, B DeSalvo, P Morin, N Loubet, S Pilorget, F Chafik, S Maitrejean, ...
2014 IEEE International Electron Devices Meeting, 9.1. 1-9.1. 4, 2014
382014
Multiple-Vt solutions in nanosheet technology for high performance and low power applications
R Bao, K Watanabe, J Zhang, J Guo, H Zhou, A Gaul, M Sankarapandian, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2019
352019
Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps
M Wang, W He, TP Ma
Applied Physics Letters 86 (19), 2005
332005
Modeling of NBTI kinetics in replacement metal gate Si and SiGe FinFETs—Part-II: AC stress and recovery
N Parihar, RG Southwick, M Wang, JH Stathis, S Mahapatra
IEEE Transactions on Electron Devices 65 (5), 1707-1713, 2018
322018
Superior PBTI reliability for SOI FinFET technologies and its physical understanding
M Wang, R Muralidhar, JH Stathis, BP Linder, H Jagannathan, ...
IEEE electron device letters 34 (7), 837-839, 2013
322013
Observer-Based H Synchronization and Unknown Input Recovery for a Class of Digital Nonlinear Systems
W Zhang, H Su, F Zhu, M Wang
Circuits, Systems, and Signal Processing 32, 2867-2881, 2013
302013
Bias temperature instability reliability in stacked gate-all-around nanosheet transistor
M Wang, J Zhang, H Zhou, RG Southwick, RHK Chao, X Miao, VS Basker, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019
262019
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مقالات 1–20