| On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics A Büyükbaş Uluşan, A Tataroğlu, Y Azizian-Kalandaragh, Ş Altındal Journal of Materials Science: Materials in Electronics 29, 159-170, 2018 | 101 | 2018 |
| Electrical and impedance properties of MPS structure based on (Cu2O–CuO–PVA) interfacial layer A Buyukbas-Uluşan, SA Yerişkin, A Tataroğlu, M Balbaşı, ... Journal of Materials Science: Materials in Electronics 29, 8234-8243, 2018 | 59 | 2018 |
| A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures A Buyukbas-Ulusan, İ Taşcıoğlu, A Tataroğlu, F Yakuphanoğlu, S Altındal Journal of Materials Science: Materials in Electronics 30, 12122-12129, 2019 | 54 | 2019 |
| Analysis of interface states in Au/ZnO/p-InP (MOS) structure FZ Acar, A Buyukbas-Ulusan, A Tataroglu Journal of Materials Science: Materials in Electronics 29, 12553-12560, 2018 | 51 | 2018 |
| Frequency-Dependent Dielectric Parameters of Au/TiO2/n-Si (MIS) Structure AB Uluşan, A Tataroğlu Silicon 10, 2071-2077, 2018 | 43 | 2018 |
| Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode AB Ulusan, A Tataroglu, Ş Altındal, Y Azizian-Kalandaragh Journal of Materials Science: Materials in Electronics 32 (12), 15732-15739, 2021 | 41 | 2021 |
| Forward and reverse bias current–voltage (I–V) characteristics in the metal–ferroelectric–semiconductor (Au/SrTiO3/n-Si) structures at room temperature A Buyukbas-Ulusan, S Altındal-Yerişkin, A Tataroğlu Journal of Materials Science: Materials in Electronics 29 (19), 16740-16746, 2018 | 35 | 2018 |
| A Compare Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer A Tataroglu, A Buyukbas Ulusan, Ş Altındal, Y Azizian-Kalandaragh Journal of Inorganic and Organometallic Polymers and Materials 31, 1668-1675, 2021 | 31 | 2021 |
| Electrical characterization of MIS diode prepared by magnetron sputtering H Tanrıkulu, A Tataroğlu, EE Tanrıkulu, AB Uluşan NISCAIR-CSIR, India, 2018 | 23 | 2018 |
| Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure A Büyükbaş-Uluşan, A Tataroğlu, Y Azizian-Kalandaragh, M Koşal Journal of Materials Science: Materials in Electronics 30, 9572-9581, 2019 | 22 | 2019 |
| Electrical characterization of silicon nitride interlayer-based MIS diode A Buyukbas-Ulusan, A Tataroglu Journal of Materials Science: Materials in Electronics 31, 9888-9893, 2020 | 20 | 2020 |
| Analysis of barrier inhomogeneities in AuGe/n-Ge Schottky diode A Buyukbas Ulusan, A Tataroglu Indian Journal of Physics 92, 1397-1402, 2018 | 18 | 2018 |
| Impedance spectroscopy of Au/TiO2/n-Si metal-insulator-semiconductor (MIS) capacitor A Büyükbaş-Uluşan, A Tataroğlu Physica B: Condensed Matter 580, 411945, 2020 | 17 | 2020 |
| Analysis of barrier height and carrier concentration of MOS capacitor using Cf and G/ω-f measurements A Tataroğlu, G Güven, S Yılmaz, A Büyükbaş Gazi University Journal of Science 27 (3), 909-915, 2014 | 13 | 2014 |
| Analysis of the current transport characteristics (CTCs) in the Au/n-Si Schottky diodes (SDs) with Al2O3 interfacial layer over wide temperature range A Buyukbas-Ulusan, A Tataroglu, S Altındal-Yerişkin ECS Journal of Solid State Science and Technology 12 (8), 083010, 2023 | 11 | 2023 |
| Analysis of Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor by Impedance Spectroscopy A Buyukbas, A Tataroğlu, M Balbaşı Journal of Nanoelectronics and Optoelectronics 9 (4), 515-519, 2014 | 10 | 2014 |
| Effects of temperature on dielectric parameters of metal-oxide-semiconductor capacitor with thermal oxide layer A Büyükbaş, A Tataroğlu Journal of Nanoelectronics and Optoelectronics 10 (5), 675-679, 2015 | 8 | 2015 |
| Dielectric, conductivity and modulus analysis of AuGe/SiO 2/p-Si/AuGe capacitor A Büyükbaş, A Tataroglu, M Balbasi J. Optoelectron. Adv. Mater 17, 1134-1138, 2015 | 5 | 2015 |
| Ionizing radiation effects on Au/TiO2/n-Si metal–insulator-semiconductor (MIS) structure R Ertugrul-Uyar, A Buyukbas-Ulusan, A Tataroglu Journal of Materials Science: Materials in Electronics 31, 19846-19851, 2020 | 4 | 2020 |
| Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer A Büyükbaş-Uluşan, SA Yerişkin, A Tataroğlu, M Balbasi, ... Optoelectronics and Advanced Materials-Rapid Communications 14 (May-June …, 2020 | 4 | 2020 |