Steep-slope hysteresis-free negative capacitance MoS2 transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ...
Nature nanotechnology 13 (1), 24-28, 2018
554 2018 Ultra-wide bandgap semiconductor Ga2 O3 power diodes J Zhang, P Dong, K Dang, Y Zhang, Q Yan, H Xiang, J Su, Z Liu, M Si, ...
Nature communications 13 (1), 3900, 2022
408 2022 High-Performance Depletion/Enhancement-ode H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide
IEEE Electron Device Letters 38 (1), 103-106, 2016
327 2016 Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ...
ACS nano 11 (10), 10222-10229, 2017
253 2017 β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect H Zhou, K Maize, G Qiu, A Shakouri, PD Ye
Applied Physics Letters 111 (9), 2017
242 2017 Field-Plated Lateral 2 O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 Z Hu, H Zhou, Q Feng, J Zhang, C Zhang, K Dang, Y Cai, Z Feng, Y Gao, ...
IEEE Electron Device Letters 39 (10), 1564-1567, 2018
198 2018 Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors D Kwon, K Chatterjee, AJ Tan, AK Yadav, H Zhou, AB Sachid, R Dos Reis, ...
IEEE Electron Device Letters 39 (2), 300-303, 2017
177 2017 Progress in state-of-the-art technologies of Ga2O3 devices C Wang, J Zhang, S Xu, C Zhang, Q Feng, Y Zhang, J Ning, S Zhao, ...
Journal of Physics D: Applied Physics 54 (24), 243001, 2021
165 2021 Demonstration of β-Ga2 O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities Y Lv, Y Wang, X Fu, S Dun, Z Sun, H Liu, X Zhou, X Song, K Dang, ...
IEEE Transactions on Power Electronics 36 (6), 6179-6182, 2020
152 2020 Al2O3/ H Zhou, S Alghmadi, M Si, G Qiu, DY Peide
IEEE Electron Device Letters 37 (11), 1411-1414, 2016
151 2016 Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 2011
151 2011 A review of the most recent progresses of state-of-art gallium oxide power devices H Zhou, J Zhang, C Zhang, Q Feng, S Zhao, P Ma, Y Hao
Journal of Semiconductors 40 (1), 011803, 2019
134 2019 Lateral β-Ga2 O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2 Y Lv, H Liu, X Zhou, Y Wang, X Song, Y Cai, Q Yan, C Wang, S Liang, ...
IEEE Electron Device Letters 41 (4), 537-540, 2020
127 2020 6 kV/3.4 mΩ·cm2 Vertical β-Ga2 O3 Schottky Barrier Diode With BV2 /Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC P Dong, J Zhang, Q Yan, Z Liu, P Ma, H Zhou, Y Hao
IEEE Electron Device Letters 43 (5), 765-768, 2022
124 2022 High-Performance Vertical 2 O3 Schottky Barrier Diode With Implanted Edge Termination H Zhou, Q Yan, J Zhang, Y Lv, Z Liu, Y Zhang, K Dang, P Dong, Z Feng, ...
IEEE Electron Device Letters 40 (11), 1788-1791, 2019
123 2019 Demonstration of the p-NiOx /n-Ga2 O3 Heterojunction Gate FETs and Diodes With BV2 /Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2 C Wang, H Gong, W Lei, Y Cai, Z Hu, S Xu, Z Liu, Q Feng, H Zhou, J Ye, ...
IEEE Electron Device Letters 42 (4), 485-488, 2021
122 2021 β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron, sp value of 0.93 GW/cm2 Q Yan, H Gong, J Zhang, J Ye, H Zhou, Z Liu, S Xu, C Wang, Z Hu, ...
Applied Physics Letters 118 (12), 2021
118 2021 Recent progress of integrated circuits and optoelectronic chips Y Hao, S Xiang, G Han, J Zhang, X Ma, Z Zhu, X Guo, Y Zhang, Y Han, ...
Science China Information Sciences 64 (10), 201401, 2021
107 2021 Toward emerging gallium oxide semiconductors: A roadmap Y Yuan, W Hao, W Mu, Z Wang, X Chen, Q Liu, G Xu, C Wang, H Zhou, ...
Fundamental Research 1 (6), 697-716, 2021
106 2021 Thermodynamic Studies of β-Ga2 O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate H Zhou, K Maize, J Noh, A Shakouri, PD Ye
ACS omega 2 (11), 7723-7729, 2017
104 2017 
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue Universityبريد إلكتروني تم التحقق منه على purdue.edu