Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, X Zhang, Y Guo, J Zou
Nano letters 7 (4), 921-926, 2007
384 2007 III–V semiconductor nanowires for optoelectronic device applications HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, J Zou, LM Smith, ...
Progress in Quantum Electronics 35 (2-3), 23-75, 2011
375 2011 Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots R Leon, Y Kim, C Jagadish, M Gal, J Zou, DJH Cockayne
Applied physics letters 69 (13), 1888-1890, 1996
336 1996 Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires Y Kim, HJ Joyce, Q Gao, HH Tan, C Jagadish, M Paladugu, J Zou, ...
Nano letters 6 (4), 599-604, 2006
273 2006 Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires A Mishra, LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, ...
Applied Physics Letters 91 (26), 2007
261 2007 Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, Y Kim, ...
Applied Physics Letters 89 (17), 2006
239 2006 Unexpected benefits of rapid growth rate for III− V nanowires HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ...
Nano letters 9 (2), 695-701, 2009
176 2009 Growth mechanism of truncated triangular III–V nanowires J Zou, M Paladugu, H Wang, GJ Auchterlonie, YN Guo, Y Kim, Q Gao, ...
Small 3 (3), 389-393, 2007
158 2007 Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor BH Choi, SW Hwang, IG Kim, HC Shin, Y Kim, EK Kim
Applied Physics Letters 73 (21), 3129-3131, 1998
150 1998 High purity GaAs nanowires free of planar defects: growth and characterization HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ...
Advanced Functional Materials 18 (23), 3794-3800, 2008
132 2008 Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures M Paladugu, J Zou, YN Guo, X Zhang, Y Kim, HJ Joyce, Q Gao, HH Tan, ...
Applied Physics Letters 93 (10), 2008
127 2008 Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures M Paladugu, J Zou, YN Guo, GJ Auchterlonie, HJ Joyce, Q Gao, ...
Small 3 (11), 1873-1877, 2007
124 2007 Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals JK Kim, HJ Cheong, Y Kim, JY Yi, HJ Bark, SH Bang, JH Cho
Applied Physics Letters 82 (15), 2527-2529, 2003
118 2003 Nucleation transitions for InGaAs islands on vicinal (100) GaAs R Leon, TJ Senden, Y Kim, C Jagadish, A Clark
Physical review letters 78 (26), 4942, 1997
106 1997 Phase separation induced by Au catalysts in ternary InGaAs nanowires YN Guo, HY Xu, GJ Auchterlonie, T Burgess, HJ Joyce, Q Gao, HH Tan, ...
Nano letters 13 (2), 643-650, 2013
99 2013 Suppression of Ostwald ripening in BD Min, Y Kim, EK Kim, SK Min, MJ Park
Physical Review B 57 (19), 11879, 1998
82 1998 Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires S Paiman, Q Gao, HJ Joyce, Y Kim, HH Tan, C Jagadish, X Zhang, Y Guo, ...
Journal of Physics D: Applied Physics 43 (44), 445402, 2010
79 2010 Evolution of epitaxial InAs nanowires on GaAs (111) B X Zhang, J Zou, M Paladugu, Y Guo, Y Wang, Y Kim, HJ Joyce, Q Gao, ...
small 5 (3), 366-369, 2009
78 2009 Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope CK Hyon, SC Choi, SW Hwang, D Ahn, Y Kim, EK Kim
Applied physics letters 75 (2), 292-294, 1999
70 1999 Ultralarge capacitance–voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted … Y Kim, KH Park, TH Chung, HJ Bark, JY Yi, WC Choi, EK Kim, JW Lee, ...
Applied Physics Letters 78 (7), 934-936, 2001
69 2001 
Chennupati JagadishAustralian National Universityبريد إلكتروني تم التحقق منه على anu.edu.au