Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates M Higashiwaki, K Sasaki, A Kuramata, T Masui, S Yamakoshi
Applied Physics Letters 100 (1), 2012
1943 2012 Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
1439 2018 Recent progress in Ga2O3 power devices M Higashiwaki, K Sasaki, H Murakami, Y Kumagai, A Koukitu, A Kuramata, ...
Semiconductor Science and Technology 31 (3), 034001, 2016
1145 2016 Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics M Higashiwaki, K Sasaki, T Kamimura, M Hoi Wong, D Krishnamurthy, ...
Applied Physics Letters 103 (12), 2013
790 2013 Guest Editorial: The dawn of gallium oxide microelectronics M Higashiwaki, GH Jessen
Applied Physics Letters 112 (6), 2018
681 2018 Development of gallium oxide power devices M Higashiwaki, K Sasaki, A Kuramata, T Masui, S Yamakoshi
physica status solidi (a) 211 (1), 21-26, 2014
608 2014 1-kV vertical Ga2O3 field-plated Schottky barrier diodes K Konishi, K Goto, H Murakami, Y Kumagai, A Kuramata, S Yamakoshi, ...
Applied Physics Letters 110 (10), 2017
582 2017 Field-Plated Ga2 O3 MOSFETs With a Breakdown Voltage of Over 750 V MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki
IEEE Electron Device Letters 37 (2), 212-215, 2015
576 2015 Anisotropic thermal conductivity in single crystal β-gallium oxide Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ...
Applied Physics Letters 106 (11), 2015
540 2015 K Sasaki, M Higashiwaki, A Kuramata, T Masui, S Yamakoshi
IEEE electron device letters 34 (4), 493-495, 2013
449 2013 Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy H Murakami, K Nomura, K Goto, K Sasaki, K Kawara, QT Thieu, ...
Applied Physics Express 8 (1), 015503, 2014
440 2014 Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals T Onuma, S Fujioka, T Yamaguchi, M Higashiwaki, K Sasaki, T Masui, ...
Applied Physics Letters 103 (4), 2013
392 2013 Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts K Sasaki, M Higashiwaki, A Kuramata, T Masui, S Yamakoshi
Applied Physics Express 6 (8), 086502, 2013
388 2013 Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy T Onuma, S Saito, K Sasaki, T Masui, T Yamaguchi, T Honda, ...
Japanese Journal of Applied Physics 54 (11), 112601, 2015
366 2015 MBE grown Ga2O3 and its power device applications K Sasaki, M Higashiwaki, A Kuramata, T Masui, S Yamakoshi
Journal of Crystal Growth 378, 591-595, 2013
363 2013 β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
356 2022 Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide … M Higashiwaki, K Konishi, K Sasaki, K Goto, K Nomura, QT Thieu, ...
Applied Physics Letters 108 (13), 2016
354 2016 State-of-the-art technologies of gallium oxide power devices M Higashiwaki, A Kuramata, H Murakami, Y Kumagai
Journal of Physics D: Applied Physics 50 (33), 333002, 2017
323 2017 Current status of Ga2O3 power devices M Higashiwaki, H Murakami, Y Kumagai, A Kuramata
Japanese Journal of Applied Physics 55 (12), 1202A1, 2016
260 2016 Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions T Kamimura, K Sasaki, M Hoi Wong, D Krishnamurthy, A Kuramata, ...
Applied Physics Letters 104 (19), 2014
237 2014 
Man Hoi WongAssociate Professor, ECE, Hong Kong University of Science and Technologyبريد إلكتروني تم التحقق منه على ust.hk
