Analog of a quantum heat engine using a single-spin qubit K Ono, SN Shevchenko, T Mori, S Moriyama, F Nori
Physical Review Letters 125 (16), 166802, 2020
100 2020 Coupled quantum dots in a graphene-based two-dimensional semimetal S Moriyama, D Tsuya, E Watanabe, S Uji, M Shimizu, T Mori, ...
Nano letters 9 (8), 2891-2896, 2009
84 2009 High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO2 layer by flash lamp annealing K Usuda, Y Kamata, Y Kamimuta, T Mori, M Koike, T Tezuka
Applied Physics Express 7 (5), 056501, 2014
81 2014 Performance enhancement of tunnel field-effect transistors by synthetic electric field effect Y Morita, T Mori, S Migita, W Mizubayashi, A Tanabe, K Fukuda, ...
IEEE electron device letters 35 (7), 792-794, 2014
70 2014 High-temperature operation of a silicon qubit K Ono, T Mori, S Moriyama
Scientific reports 9 (1), 469, 2019
64 2019 Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap T Mori, Y Morita, N Miyata, S Migita, K Fukuda, W Mizubayashi, ...
Applied Physics Letters 106 (8), 2015
62 2015 Dielectric functions of In x Ga 1− x As alloys TJ Kim, TH Ghong, YD Kim, SJ Kim, DE Aspnes, T Mori, T Yao, BH Koo
Physical Review B 68 (11), 115323, 2003
60 2003 Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors T Mori, T Yasuda, K Fukuda, Y Morita, S Migita, A Tanabe, T Maeda, ...
Applied Physics Express 7 (2), 024201, 2014
42 2014 Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel Y Morita, T Mori, S Migita, W Mizubayashi, A Tanabe, K Fukuda, ...
2013 Symposium on VLSI Technology, T236-T237, 2013
36 2013 Quantum Interferometry with a K Ono, SN Shevchenko, T Mori, S Moriyama, F Nori
Physical Review Letters 122 (20), 207703, 2019
32 2019 High-performance tri-gate poly-Ge junction-less p-and n-MOSFETs fabricated by flash lamp annealing process K Usuda, Y Kamata, Y Kamimuta, T Mori, M Koike, T Tezuka
2014 IEEE International Electron Devices Meeting, 16.6. 1-16.6. 4, 2014
32 2014 Tunnel field-effect transistors with extremely low off-current using shadowing effect in drain implantation T Mori, T Yasuda, T Maeda, W Mizubayashi, Y Liu, K Sakamoto, ...
Japanese journal of applied physics 50 (6S), 06GF14, 2011
32 2011 Tunnel field-effect transistor with epitaxially grown tunnel junction fabricated by source/drain-first and tunnel-junction-last processes Y Morita, T Mori, S Migita, W Mizubayashi, A Tanabe, K Fukuda, ...
Japanese Journal of Applied Physics 52 (4S), 04CC25, 2013
30 2013 Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology T Mori, S Iizuka, T Nakayama
MRS Communications 7 (3), 541-550, 2017
29 2017 Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching N Ninomiya, T Mori, N Uchida, E Watanabe, D Tsuya, S Moriyama, ...
Japanese Journal of Applied Physics 54 (4), 046502, 2015
29 2015 A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling K Fukuda, T Mori, W Mizubayashi, Y Morita, A Tanabe, M Masahara, ...
Journal of Applied Physics 114 (14), 2013
29 2013 Experimental realization of complementary p-and n-tunnel FinFETs with subthreshold slopes of less than 60 mV/decade and very low (pA/μm) off-current on a Si CMOS platform Y Morita, T Mori, K Fukuda, W Mizubayashi, S Migita, T Matsukawa, ...
2014 IEEE International Electron Devices Meeting, 9.7. 1-9.7. 4, 2014
25 2014 P-channel TFET operation of bilayer structures with type-II heterotunneling junction of oxide-and group-IV semiconductors K Kato, KW Jo, H Matsui, H Tabata, T Mori, Y Morita, T Matsukawa, ...
IEEE Transactions on Electron Devices 67 (4), 1880-1886, 2020
23 2020 Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET Y Morita, K Fukuda, T Mori, W Mizubayashi, S Migita, K Endo, Y Liu, ...
Japanese Journal of Applied Physics 55 (4S), 04EB06, 2016
23 2016 Characterization of Effective Mobility and its Degradation Mechanism in MoS2 MOSFETs T Mori, N Ninomiya, T Kubo, N Uchida, E Watanabe, D Tsuya, ...
IEEE Transactions on Nanotechnology 15 (4), 651-656, 2016
22 2016 