Mechanism of Threshold Voltage Shift in X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1145-1148, 2018
139 2018 Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices S Dimitrijev, J Han, HA Moghadam, A Aminbeidokhti
Mrs Bulletin 40 (5), 399-405, 2015
117 2015 Growth of 3C–SiC on 150-mm Si (100) substrates by alternating supply epitaxy at 1000 C L Wang, S Dimitrijev, J Han, A Iacopi, L Hold, P Tanner, HB Harrison
Thin solid films 519 (19), 6443-6446, 2011
111 2011 Electrical and physical characterization of gate oxides on KY Cheong, S Dimitrijev, J Han, HB Harrison
Journal of applied physics 93 (9), 5682-5686, 2003
106 2003 The effect of Al addition on the gas sensing properties of Fe2O3-based sensors JS Han, T Bredow, DE Davey, AB Yu, DE Mulcahy
Sensors and Actuators B: Chemical 75 (1-2), 18-23, 2001
100 2001 Associated comorbidities in psoriasis and inflammatory bowel disease AM Binus, J Han, AA Qamar, EA Mody, EW Holt, AA Qureshi
Journal of the European Academy of Dermatology and Venereology 26 (5), 644-650, 2012
84 2012 Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC HP Phan, D Viet Dao, P Tanner, L Wang, NT Nguyen, Y Zhu, S Dimitrijev
Applied Physics Letters 104 (11), 2014
82 2014 Demonstration of p-type 3C–SiC grown on 150 mm Si (1 0 0) substrates by atomic-layer epitaxy at 1000 C L Wang, S Dimitrijev, J Han, P Tanner, A Iacopi, L Hold
journal of crystal growth 329 (1), 67-70, 2011
82 2011 Surface-passivation effects on the performance of 4H-SiC BJTs R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ...
IEEE Transactions on Electron Devices 58 (1), 259-265, 2010
82 2010 Ultrathin Fe 2 O 3 nanoflakes using smart chemical stripping for high performance lithium storage Y Wang, J Han, X Gu, S Dimitrijev, Y Hou, S Zhang
Journal of materials chemistry A 5 (35), 18737-18743, 2017
77 2017 Transient-current method for measurement of active near-interface oxide traps in 4H-SiC MOS capacitors and MOSFETs HA Moghadam, S Dimitrijev, J Han, D Haasmann, A Aminbeidokhti
IEEE Transactions on Electron Devices 62 (8), 2670-2674, 2015
72 2015 Active defects in MOS devices on 4H-SiC: A critical review HA Moghadam, S Dimitrijev, J Han, D Haasmann
Microelectronics Reliability 60, 1-9, 2016
70 2016 Experimental investigation of piezoresistive effect in p-type 4H–SiC TK Nguyen, HP Phan, T Dinh, J Han, S Dimitrijev, P Tanner, ARM Foisal, ...
IEEE Electron Device Letters 38 (7), 955-958, 2017
52 2017 Anchoring ultra-fine TiO 2–SnO 2 solid solution particles onto graphene by one-pot ball-milling for long-life lithium-ion batteries S Li, M Ling, J Qiu, J Han, S Zhang
Journal of Materials Chemistry A 3 (18), 9700-9706, 2015
52 2015 Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC SA Corrêa, C Radtke, GV Soares, L Miotti, IJR Baumvol, S Dimitrijev, ...
Applied Physics Letters 94 (25), 2009
46 2009 Photoelectrochemical Manifestation of Photoelectron Transport Properties of Vertically Aligned Nanotubular TiO2 Photoanodes H Zhang, H Zhao, S Zhang, X Quan
ChemPhysChem 9 (1), 117-123, 2008
46 2008 Description and verification of the fundamental current mechanisms in silicon carbide Schottky barrier diodes J Nicholls, S Dimitrijev, P Tanner, J Han
Scientific reports 9 (1), 3754, 2019
43 2019 Robust TiO 2/BDD heterojunction photoanodes for determination of chemical oxygen demand in wastewaters Y Han, J Qiu, Y Miao, J Han, S Zhang, H Zhang, H Zhao
Analytical Methods 3 (9), 2003-2009, 2011
42 2011 Charge trapping properties of 3C-and 4H-SiC MOS capacitors with nitrided gate oxides R Arora, J Rozen, DM Fleetwood, KF Galloway, CX Zhang, J Han, ...
Ieee transactions on nuclear science 56 (6), 3185-3191, 2009
34 2009 Gate-voltage independence of electron mobility in power AlGaN/GaN HEMTs A Aminbeidokhti, S Dimitrijev, AK Hanumanthappa, HA Moghadam, ...
IEEE Transactions on Electron Devices 63 (3), 1013-1019, 2016
33 2016 