| The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements SG Afandiyeva, İ.M., Dökme, İ., Altındal, Ş., Abdullayeva, L.K., Askerov Microelectronic Engineering 85 (2), 365–370, 2008 | 37 | 2008 |
| The obtaining of Al-Ti10W90-Si(n) Shottky diodes and investigation of their interface surface states density IM Afandiyeva, SG Askerov, LK Abdullayeva, SHS Aslanov Solid-State Electronics 51 (8), 1096-1100, 2007 | 16 | 2007 |
| Self-assembled patches in PtSi/n-Si (111) diodes IM Afandiyeva, Ş Altιndal, LK Abdullayeva, Aİ Bayramova Journal of Semiconductors 39 (5), 054002, 2018 | 8 | 2018 |
| The influence of the metal microstructure on the breakdown mechanism of Schottky diodes SG Askerov, MG Gasanov, L KAbdullayeva Materials Physics and Chemistry 4 (1), 1-6, 2022 | 6 | 2022 |
| Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems SG Askerov, LK Abdullayeva, MG Hasanov Journal of Semiconductors 41 (10), 102101, 2020 | 6 | 2020 |
| Illumination dependent electrical characteristics of PtSi/n-Si (111) Schottky Barrier Diodes (SBDs) at room temperature IM Afandiyeva, Ş Altındal, LK Abdullayeva Journal of Modern Technology and Engineering 2 (1), 43-56, 2017 | 6 | 2017 |
| ANALYTIC METHOD FOR DETERMINING THE COERCIVE FORCE OF FERROMAGNETIC MATERIALS SG Asadullayeva, NA Ismayilova, AN Jafarova, LK Abdullayeva Advanced Physical Research 5 (2), 117-121, 2023 | 4 | 2023 |
| Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions SQ Askerov, LK Abdullayeva, MH Hasanov Semiconductors 51, 591-593, 2017 | 3 | 2017 |
| INVESTIGATION OF THE ROLE OF METAL IN NON-ALLOY METAL-SEMICONDUCTOR (Si) CONTACT LK Abdullayeva, MH Hasanov New Materials, Compounds and Applications 8 (1), 135-141, 2024 | 2 | 2024 |
| The investigation of tunnel properties of Al-TiW-PtSi/n-Si (111)(MS) schottky barrier diodes (SBDS) in the wide temperature range IM Afandiyeva, Ş Altındal, LK Abdullayeva Journal of Qafqaz University 2 (2), 107, 2014 | 2 | 2014 |
| Причина расхождения экспериментальных значений высоты барьера на контакте металл–полупроводник ШГ Аскеров, ЛК Абдуллаева, МГ Гасанов Физика и техника полупроводников 51 (5), 620-622, 2017 | 1 | 2017 |
| IMPACT OF Ca DOPING ON THE STRUCTURAL CHARACTERISTICS OF La, TA Tran, HC Tran, SH Le, NT Nghiem, LV Truong-Son, DT Khan, ... Advanced Physical Research 6 (3), 182-190, 2024 | | 2024 |
| INVESTIGATION OF THE MECHANISM OF CHARGE TRANSFER AT INTERFACE Al0, 8Ni0, 2/n-Si DIODES WITH SCHOTTKY BARRIER LA Kamal, MH Hidayet, MA Nuhbala The XXII International Scientific and Practical Conference «Modern …, 2023 | | 2023 |
| RESEARCH AND MODELING OF SYNERGY PROCESS VQ FARKHADOV, LK ABDULLAYEVA 9ROXPH, 156, 2022 | | 2022 |
| CURRENT STATE OF RESEARCH IN THE FIELD OF MALEIC ANHYDRIDE ESTERIFICATION WITH ALCOHOLS FS Gurbanova, AH Gasanov, LQ Valizade, LE Abdullayeva, IH Ayyubov Processes of Petrochemistry and Oil Refining 23 (3), 2022 | | 2022 |
| PHOTOLUMINESCENCE STUDY OF METAL FILM’S IMPACT ON SILICON ENERGETIC STRUCTURE IM AFANDIYEVA, LK ABDULLAYEVA, S ÖZÇELİK | | 2010 |
| FİZİKA 2007 CİLD XΙΙΙ № 1-2 S ÖZÇELIK, Ş ALTINDAL, IM AFANDIYEVA, SHG ASKEROV, ... Solid-State Electron 47, 2003, 2003 | | 2003 |
| FİZİKA 2007 CİLD XIΙΙ № 3 İM BFBNDİYEVA, ŞQ BSGBROV, LK ABDULLAYEVA, MN AĞAYEV, ... | | |
| RESEARCH OF THE EQUIVALENT CIRCUIT PARAMETERS OF THE (AL-TiW+ PtSi)-nSi SHOTTKY DIODES IM Afandiyeva, LK Abdullayeva, S Altundal | | |
