Equilibrium molecular dynamics (MD) simulation study of thermal conductivity of graphene nanoribbon: a comparative study on MD potentials AI Khan, IA Navid, M Noshin, HMA Uddin, FF Hossain, S Subrina
Electronics 4 (4), 1109-1124, 2015
84 2015 Impact of vacancies on the thermal conductivity of graphene nanoribbons: A molecular dynamics simulation study M Noshin, AI Khan, IA Navid, HM Uddin, S Subrina
Aip Advances 7 (1), 2017
56 2017 Thermal transport characterization of hexagonal boron nitride nanoribbons using molecular dynamics simulation AI Khan, IA Navid, M Noshin, S Subrina
AIP Advances 7 (10), 2017
43 2017 Thermal transport characterization of stanene/silicene heterobilayer and stanene bilayer nanostructures M Noshin, AI Khan, S Subrina
Nanotechnology, 2018
25 2018 From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices K Woo, Z Bian, M Noshin, RP Martinez, M Malakoutian, B Shankar, ...
Journal of Physics: Materials 7 (2), 022003, 2024
23 2024 Modeling and computation of thermal and optical properties in silicene supported honeycomb bilayer and heterobilayer nanostructures M Noshin, AI Khan, R Chakraborty, S Subrina
Materials Science in Semiconductor Processing 129, 105776, 2021
14 2021 A molecular dynamics study on thermal conductivity of armchair graphene nanoribbon AI Khan, IA Navid, FF Hossain, M Noshin, S Subrina
2016 IEEE Region 10 Conference (TENCON), 2775-2778, 2016
10 2016 Cooling future system-on-chips with diamond inter-tiers M Malakoutian, A Kasperovich, D Rich, K Woo, C Perez, R Soman, ...
Cell Reports Physical Science 4 (12), 2023
8 2023 Demonstration of N-polar All-AlGaN High Electron Mobility Transistors with 375 mA/mm Drive Current M Noshin, R Soman, S Chowdhury
IEEE Electron Device Letters 44 (7), 1072-1075, 2023
8 2023 A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same M Noshin, R Soman, X Xu, S Chowdhury
Semiconductor Science and Technology 37, 075018, 2022
6 2022 10 MHz-switching on GaN trench CAVET up to 300° C operation enabled by high channel mobility X Wen, B Shankar, K Lee, H Kasai, M Noshin, J Chun, Y Nakazato, ...
IEEE Electron Device Letters 45 (4), 653-656, 2024
4 2024 Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors M Noshin, X Wen, R Soman, X Xu, S Chowdhury
Applied Physics Letter 123 (6), 062103, 2023
4 2023 A study on MOCVD growth window for high quality N-polar GaN for vertical device applications R Soman, M Noshin, S Chowdhury
Semiconductor Science and Technology 37 (9), 095003, 2022
4 2022 Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN KJ Lee, Y Nakazato, J Chun, X Wen, C Meng, R Soman, M Noshin, ...
Nanotechnology 33 (50), 505704, 2022
3 2022 First experimental demonstration of monolithic bidirectional switch using GaN current aperture vertical electron transistor (CAVET) X Wen, H Kasai, K Lee, M Noshin, J Chun, S Chowdhury
2024 Device Research Conference (DRC), 1-2, 2024
2 2024 A systematic study on the efficacy of low-temperature GaN regrown on p -GaN to suppress Mg out-diffusion KJ Lee, X Wen, Y Nakazato, J Chun, M Noshin, C Meng, S Chowdhury
Frontiers in Materials 10, 1229036, 2023
2 2023 Thermal transport in defected armchair graphene nanoribbon: a molecular dynamics study M Noshin, AI Khan, IA Navid, S Subrina
TENCON 2017-2017 IEEE Region 10 Conference, 2600-2603, 2017
2 2017 AlN: An engineered thermal material for 3D integrated circuits S Vaziri, C Perez, IM Datye, H Kwon, CF Hsu, ME Chen, M Noshin, ...
Advanced Functional Materials 35 (1), 2402662, 2025
1 2025 Monolithic Bidirectional GaN-on-GaN Vertical Transistor Technologies: Exploring Bidirectional CAVET for Next-Generation Switching Applications with Symmetrical Power Control X Wen, H Kasai, M Noshin, C Meng, S Chowdhury
IEEE Electron Devices Magazine 2 (4), 36-41, 2025
2025 Wrap-Around Gate Delivering X Wen, H Kasai, K Fujita, T Yamasaki, T Sawada, M Noshin, C Meng, ...
2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024
2024 
SAMIA SUBRINABangladesh University of Engineering and Technologyبريد إلكتروني تم التحقق منه على eee.buet.ac.bd