Bioinspired in-sensor visual adaptation for accurate perception F Liao, Z Zhou, BJ Kim, J Chen, J Wang, T Wan, Y Zhou, AT Hoang, ... Nature Electronics 5 (2), 84-91, 2022 | 354 | 2022 |
Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 196 | 2021 |
Optoelectronic graded neurons for bioinspired in-sensor motion perception J Chen, Z Zhou, BJ Kim, Y Zhou, Z Wang, T Wan, J Yan, J Kang, JH Ahn, ... Nature Nanotechnology 18 (8), 882-888, 2023 | 170 | 2023 |
In‐sensor computing: materials, devices, and integration technologies T Wan, B Shao, S Ma, Y Zhou, Q Li, Y Chai Advanced materials 35 (37), 2203830, 2023 | 155 | 2023 |
Low-power artificial neurons based on Ag/TiN/HfAlOx/Pt threshold switching memristor for neuromorphic computing YF Lu, Y Li, H Li, TQ Wan, X Huang, YH He, X Miao IEEE Electron Device Letters 41 (8), 1245-1248, 2020 | 88 | 2020 |
Controlled memory and threshold switching behaviors in a heterogeneous memristor for neuromorphic computing HY Li, XD Huang, JH Yuan, YF Lu, TQ Wan, Y Li, KH Xue, YH He, M Xu, ... Advanced Electronic Materials 6 (8), 2000309, 2020 | 59 | 2020 |
Neuromorphic sensory computing T Wan, S Ma, F Liao, L Fan, Y Chai Science China Information Sciences 65, 1-14, 2022 | 51 | 2022 |
A High‐Performance Ag/TiN/HfOx/HfOy/HfOx/Pt Diffusive Memristor for Calibration‐Free True Random Number Generator YF Lu, HY Li, Y Li, LH Li, TQ Wan, L Yang, WB Zuo, KH Xue, XS Miao Advanced Electronic Materials 8 (9), 2200202, 2022 | 34 | 2022 |
Highly trustworthy in-sensor cryptography for image encryption and authentication B Shao, T Wan, F Liao, BJ Kim, J Chen, J Guo, S Ma, JH Ahn, Y Chai ACS nano 17 (11), 10291-10299, 2023 | 32 | 2023 |
Volatile threshold switching memristor: An emerging enabler in the AIoT era W Zuo, Q Zhu, Y Fu, Y Zhang, T Wan, Y Li, M Xu, X Miao Journal of Semiconductors 44 (5), 053102, 2023 | 23 | 2023 |
Room-temperature valley transistors for low-power neuromorphic computing J Chen, Y Zhou, J Yan, J Liu, L Xu, J Wang, T Wan, Y He, W Zhang, ... Nature Communications 13 (1), 7758, 2022 | 21 | 2022 |
Controlled majority-inverter graph logic with highly nonlinear, self-rectifying memristor R Ni, L Yang, XD Huang, SG Ren, TQ Wan, Y Li, XS Miao IEEE Transactions on Electron Devices 68 (10), 4897-4902, 2021 | 21 | 2021 |
Multidimensional vision sensors for information processing Z Wang, T Wan, S Ma, Y Chai Nature Nanotechnology, 1-12, 2024 | 18 | 2024 |
Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction H Chen, T Wan, Y Zhou, J Yan, C Chen, Z Xu, S Zhang, Y Zhu, H Yu, ... Advanced Functional Materials 34 (15), 2304242, 2024 | 14 | 2024 |
12.7 MA/cm2 On-Current Density and High Uniformity Realized in AgGeSe/Al2O3 Selectors TQ Wan, YF Lu, JH Yuan, HY Li, Y Li, XD Huang, KH Xue, XS Miao IEEE Electron Device Letters 42 (4), 613-616, 2021 | 10 | 2021 |
Optoelectronic Devices for In‐Sensor Computing Q Ren, C Zhu, S Ma, Z Wang, J Yan, T Wan, W Yan, Y Chai Advanced Materials, 2407476, 2024 | 7 | 2024 |
Resistive Switching Characteristic of Cu Electrode-Based RRAM Device H Yuan, T Wan, H Bai Electronics 12 (6), 1471, 2023 | 5 | 2023 |
Bioinspired In-Sensor Multimodal Fusion for Enhanced Spatial and Spatiotemporal Association S Ma, Y Zhou, T Wan, Q Ren, J Yan, L Fan, H Yuan, M Chan, Y Chai Nano Letters, 2024 | 4 | 2024 |
A 2T2R1C vision cell with 140 dB dynamic range and event-driven characteristics for in-sensor spiking neural network Y Zhou, J Fu, T Wan, L Xu, S Ma, J Chen, X Miao, Y He, Y Chai 2022 International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4, 2022 | 3 | 2022 |
Improve the robustness of diffusive memristor based true random number generator via voltage-to-time transformation H Li, Y Fu, T Wan, Y Lu, L Yang, Y Li 2022 IEEE International Conference on Integrated Circuits, Technologies and …, 2022 | 3 | 2022 |