متابعة
Tariq Jamil
Tariq Jamil
Research Assistant at Institute for Extreme Semiconductor Chips, University of South Carolina, US
بريد إلكتروني تم التحقق منه على email.sc.edu - الصفحة الرئيسية
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency
M Usman, T Jamil, S Malik, H Jamal
Optik 232, 166528, 2021
222021
Water purification through a novel electrospun carbon nanofiber membrane
T Jamil, S Munir, Q Wali, GJ Shah, ME Khan, R Jose
ACS omega 6 (50), 34744-34751, 2021
202021
White light-emitting diodes: Past, present, and future
NU Islam, M Usman, S Rasheed, T Jamil
ECS Journal of Solid State Science and Technology 10 (10), 106004, 2021
142021
Sandwiching electron blocking layer with p-AlInN layer to enhance hole injection in AlGaN-based deep ultraviolet light-emitting diodes
T Jamil, M Usman, H Jamal
Materials Research Bulletin 142, 111389, 2021
142021
Optimized carrier confinement in deep-ultraviolet light-emitting diodes with AlInGaN/AlInN superlattice electron blocking layer
T Jamil, M Usman
Materials Science and Engineering: B 278, 115638, 2022
122022
Energy-savings using solid-state lighting: A case study of India, Pakistan, and Bangladesh
NU Islam, M Usman, T Jamil
Energy Policy 160, 112676, 2022
122022
Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier
NU Islam, M Usman, S Khan, T Jamil, S Rasheed, S Ali, S Saeed
Optik 248, 168212, 2021
112021
High radiative recombination rate of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN/AlInN/AlInGaN tunnel electron blocking layer
T Jamil, M Usman, H Jamal, S Khan, S Rasheed, S Ali
Journal of Electronic Materials 50 (10), 5612-5617, 2021
102021
On the enhancement of carrier injection efficiency by employing AlInN last quantum barrier in 277 nm ultraviolet light-emitting diodes
T Jamil, M Usman, H Jamal
Journal of Applied Physics 129 (21), 2021
92021
The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer
T Jamil, M Usman, S Malik, H Jamal
Applied Physics A 127 (5), 397, 2021
92021
The Effect of p-Doped AlInN Last Quantum Barrier on Carrier Concentration of 266 nm Light-Emitting Diodes Without Electron Blocking Layer
M Usman, T Jamil
Journal of Electronic Materials 51 (11), 6222-6227, 2022
52022
Carrier confinement in 232 nm emission AlGaN-based ultraviolet light-emitting diodes with p-AlN layer
M Usman, T Jamil, S Saeed
Materials Science and Engineering: B 287, 116097, 2023
42023
Performance enhancement with thin p-AlInN electron-blocking layer in ultraviolet light-emitting diodes
M Usman, T Jamil, M Aamir, AA Alyemeni
Optical Engineering 62 (1), 017106-017106, 2023
22023
Marked efficiency enhancement of 222 nm AlGaN-based deep-UV LEDs for disinfection of SARS-2 (Covid-19)
T Jamil, M Usman, HU Jamal, S Khan
2021 International Conference on Numerical Simulation of Optoelectronic …, 2021
22021
Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping
T Jamil, AAM Mazumder, M Rahman, M Ali, J Lin, H Jiang, G Simin, ...
Applied Physics Express, 2025
2025
III-Nitride-based short-wavelength ultraviolet light sources
T Jamil, A Khan
Elsevier, 2024
2024
Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers
M Usman, AR Anwar, M Munsif, S Malik, NU Islam, T Jamil
Journal of Modern Optics 67 (9), 837-842, 2020
2020
يتعذر على النظام إجراء العملية في الوقت الحالي. عاود المحاولة لاحقًا.
مقالات 1–17