متابعة
Martin Eickhoff
Martin Eickhoff
Institut für Festkörperphysik, Universität Bremen
بريد إلكتروني تم التحقق منه على ifp.uni-bremen.de
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures‏
O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ...‏
Journal of physics: condensed matter 14 (13), 3399, 2002‏
14362002
Binary copper oxide semiconductors: From materials towards devices‏
BK Meyer, A Polity, D Reppin, M Becker, P Hering, PJ Klar, T Sander, ...‏
physica status solidi (b) 249 (8), 1487-1509, 2012‏
8162012
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors‏
G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff‏
Applied Physics Letters 83 (1), 177-179, 2003‏
3702003
Playing with polarity‏
M Stutzmann, O Ambacher, M Eickhoff, U Karrer, A Lima Pimenta, ...‏
physica status solidi (b) 228 (2), 505-512, 2001‏
2942001
Gas sensitive GaN/AlGaN-heterostructures‏
J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann‏
Sensors and Actuators B: Chemical 87 (3), 425-430, 2002‏
2802002
Hydrogen response mechanism of Pt–GaN Schottky diodes‏
J Schalwig, G Müller, U Karrer, M Eickhoff, O Ambacher, M Stutzmann, ...‏
Applied Physics Letters 80 (7), 1222-1224, 2002‏
2662002
GaN-based heterostructures for sensor applications‏
M Stutzmann, G Steinhoff, M Eickhoff, O Ambacher, CE Nebel, J Schalwig, ...‏
Diamond and related materials 11 (3-6), 886-891, 2002‏
2502002
Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis‏
M De La Mata, C Magen, J Gazquez, MIB Utama, M Heiss, S Lopatin, ...‏
Nano letters 12 (5), 2579-2586, 2012‏
2042012
Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy-The influence of Si-and Mg-doping‏
F Furtmayr, M Vielemeyer, M Stutzmann, J Arbiol, S Estradé, F Peirò, ...‏
Journal of Applied Physics 104 (3), 2008‏
1992008
AlxGa1–xN—A new material system for biosensors‏
G Steinhoff, O Purrucker, M Tanaka, M Stutzmann, M Eickhoff‏
Advanced Functional Materials 13 (11), 841-846, 2003‏
1992003
Direct biofunctionalization of semiconductors: A survey‏
M Stutzmann, JA Garrido, M Eickhoff, MS Brandt‏
physica status solidi (a) 203 (14), 3424-3437, 2006‏
1922006
Recording of cell action potentials with AlGaN∕ GaN field-effect transistors‏
G Steinhoff, B Baur, G Wrobel, S Ingebrandt, A Offenhäusser, A Dadgar, ...‏
Applied Physics Letters 86 (3), 2005‏
1852005
Tin-Assisted Synthesis of by Molecular Beam Epitaxy‏
M Kracht, A Karg, J Schörmann, M Weinhold, D Zink, F Michel, M Rohnke, ...‏
Physical Review Applied 8 (5), 054002, 2017‏
1722017
Chemical functionalization of GaN and AlN surfaces‏
B Baur, G Steinhoff, J Hernando, O Purrucker, M Tanaka, B Nickel, ...‏
Applied Physics Letters 87 (26), 2005‏
1702005
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures–Part B: Sensor applications‏
M Eickhoff, J Schalwig, G Steinhoff, O Weidemann, L Görgens, ...‏
physica status solidi (c), 1908-1918, 2003‏
1642003
Group III-nitride-based gas sensors for combustion monitoring‏
J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann‏
Materials Science and Engineering: B 93 (1-3), 207-214, 2002‏
1372002
Influence of surface oxides on hydrogen-sensitive Pd: GaN Schottky diodes‏
O Weidemann, M Hermann, G Steinhoff, H Wingbrant, A Lloyd Spetz, ...‏
Applied Physics Letters 83 (4), 773-775, 2003‏
1352003
Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy‏
TA Wassner, B Laumer, S Maier, A Laufer, BK Meyer, M Stutzmann, ...‏
Journal of Applied Physics 105 (2), 2009‏
1312009
Optical properties of Si-and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy‏
F Furtmayr, M Vielemeyer, M Stutzmann, A Laufer, BK Meyer, M Eickhoff‏
Journal of Applied Physics 104 (7), 2008‏
1312008
AlN/diamond heterojunction diodes‏
CR Miskys, JA Garrido, CE Nebel, M Hermann, O Ambacher, M Eickhoff, ...‏
Applied physics letters 82 (2), 290-292, 2003‏
1292003
يتعذر على النظام إجراء العملية في الوقت الحالي. عاود المحاولة لاحقًا.
مقالات 1–20