Mechanism of Threshold Voltage Shift in X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1145-1148, 2018
139 2018 Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices HAMAA Sima Dimitrijev, Jisheng Han
MRS Bulletin 40 (05), 399-405, 2015
117 2015 Transient-current method for measurement of active near-interface oxide traps in 4H-SiC MOS capacitors and MOSFETs HA Moghadam, S Dimitrijev, J Han, D Haasmann, A Aminbeidokhti
IEEE Transactions on Electron Devices 62 (8), 2670-2674, 2015
72 2015 Active defects in MOS devices on 4H-SiC: A critical review HA Moghadam, S Dimitrijev, J Han, D Haasmann
Microelectronics Reliability 60, 1-9, 2016
70 2016 A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage SEJ Mahabadi, AA Orouji, P Keshavarzi, HA Moghadam
Semiconductor Science and Technology 26 (9), 095005, 2011
55 2011 Gate-voltage independence of electron mobility in power AlGaN/GaN HEMTs A Aminbeidokhti, S Dimitrijev, AK Hanumanthappa, HA Moghadam, ...
IEEE Transactions on Electron Devices 63 (3), 1013-1019, 2016
33 2016 Comprehensive study of a 4H–SiC MES–MOSFET SEJ Mahabadi, HA Moghadam
Physica E: Low-dimensional Systems and Nanostructures 74, 25-29, 2015
31 2015 Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement AA Orouji, HA Moghadam, A Dideban
Physica E: Low-dimensional Systems and Nanostructures 43 (1), 498-502, 2010
28 2010 Comparison of commercial planar and trench SiC MOSFETs by electrical characterization of performance-degrading near-interface traps M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ...
IEEE Transactions on Electron Devices 69 (11), 6225-6230, 2022
26 2022 Quantified density of performance-degrading near-interface traps in SiC MOSFETs M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ...
Scientific reports 12 (1), 4076, 2022
26 2022 Direct measurement of active near-interface traps in the strong-accumulation region of 4H-SiC MOS capacitors P Pande, S Dimitrijev, D Haasmann, HA Moghadam, P Tanner, J Han
IEEE Journal of the Electron Devices Society 6, 468-474, 2018
23 2018 Electrical characterization of SiC MOS capacitors: A critical review P Pande, D Haasmann, J Han, HA Moghadam, P Tanner, S Dimitrijev
Microelectronics Reliability 112, 113790, 2020
22 2020 Modeling power GaN-HEMTs using standard MOSFET equations and parameters in SPICE U Jadli, F Mohd-Yasin, HA Moghadam, P Pande, M Chaturvedi, ...
Electronics 10 (2), 130, 2021
20 2021 The correct equation for the current through voltage-dependent capacitors U Jadli, F Mohd-Yasin, HA Moghadam, JR Nicholls, P Pande, S Dimitrijev
IEEE Access 8, 98038-98043, 2020
19 2020 Design and performance considerations of novel 4H–SiC MESFET with a p-type pillar for increasing breakdown voltage HA Moghadam, AA Orouji
Physica E: Low-dimensional Systems and Nanostructures 43 (10), 1779-1782, 2011
18 2011 Effect of Hole-Injection on Leakage Degradation in a X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1203-1206, 2018
17 2018 A novel 4H–SiC SOI-MESFET with a modified breakdown voltage mechanism for improving the electrical performance HA Moghadam, AA Orouji, A Dideban
Semiconductor science and technology 27 (1), 015001, 2011
17 2011 Quantified density of active near interface oxide traps in 4H-SiC MOS capacitors HA Moghadam, S Dimitrijev, JS Han, A Aminbeidokhti, D Haasmann
Materials Science Forum 858, 603-606, 2016
16 2016 Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side AA Orouji, SM Razavi, SE Hosseini, HA Moghadam
Semiconductor science and technology 26 (11), 115001, 2011
16 2011 A novel step buried oxide partial SOI LDMOSFET with triple drift layer SEJ Mahabadi, AA Orouji, P Keshavarzi, S Rajabi, HA Moghadam, ...
2011 International Conference on Signal Processing, Communication, Computing …, 2011
16 2011 