Current advances in solar-blind photodetection technology: Using Ga 2 O 3 and AlGaN U Varshney, N Aggarwal, G Gupta Journal of Materials Chemistry C 10 (5), 1573-1593, 2022 | 101 | 2022 |
Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity U Varshney, A Sharma, P Vashishtha, L Goswami, G Gupta ACS Applied Electronic Materials 4 (11), 5641-5651, 2022 | 30 | 2022 |
Highly responsive self-driven broadband photodetector based on MoS2 nanorods/β-Ga2O3 heterojunction U Varshney, A Sharma, P Vashishtha, P Singh, G Gupta Materials Science in Semiconductor Processing 164, 107612, 2023 | 19 | 2023 |
Impact of thermal oxidation on the electrical transport and chemical & electronic structure of the GaN film grown on Si and sapphire substrates SK Jain, P Goel, U Varshney, T Garg, N Aggarwal, S Krishna, S Singh, ... Applied Surface Science Advances 5, 100106, 2021 | 19 | 2021 |
Deep ultraviolet–visible highly responsivity self-powered photodetector based on β-Ga2O3/GaN heterostructure U Varshney, A Sharma, L Goswami, J Tawale, G Gupta Vacuum 217, 112570, 2023 | 16 | 2023 |
Self-driven Vis-NIR broadband photodetector based on nano-hedge-like MoS2/WSe2 heterostructure A Sharma, U Varshney, P Vashishtha, A Yadav, P Prajapat, P Singh, ... Materials Science in Semiconductor Processing 164, 107611, 2023 | 16 | 2023 |
Fabrication of ultra-sensitive NO sensor based on vacuum selenized WSe2nanorods A Sharma, U Varshney, A Yadav, P Vashishtha, P Singh, G Gupta Materials Chemistry and Physics 296, 127241, 2023 | 12 | 2023 |
Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire V Aggarwal, C Ramesh, U Varshney, P Tyagi, S Gautam, AK Mauraya, ... Applied Physics A 128 (11), 989, 2022 | 11 | 2022 |
Temperature-dependent pn switching for highly selective CO gas sensing based on mixed phases of magnetron sputtered (p) SnO-(n) SnO2 thin films AK Gangwar, R Godiwal, U Varshney, S Das, JS Tawale, G Gupta, ... Applied Surface Science 655, 159607, 2024 | 6 | 2024 |
Shock-wave-induced variation in structural, optical and third-order nonlinear properties of an l-ascorbic acid single crystal A Krishna, N Vijayan, S Yadav, SK Saini, R Yadav, U Varshney, ... Journal of Applied Crystallography 57 (1), 2024 | 6 | 2024 |
A nanoflower-like GaSe/β-Ga 2 O 3 based heterostructure for highly efficient self-powered broadband photodetectors U Varshney, A Sharma, A Yadav, P Goswami, G Gupta Journal of Materials Chemistry C 12 (6), 2073-2083, 2024 | 5 | 2024 |
Self-driven high-performance broadband photodetector based on WSe2 nano-speckles A Sharma, U Varshney, A Yadav, P Vashishtha, L Goswami, G Gupta Materials Research Bulletin 169, 112518, 2024 | 4 | 2024 |
Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20) V Aggarwal, S Gautam, U Varshney, AK Mauraya, R Kumar, G Gupta, ... Journal of Materials Research 38 (2), 429-438, 2023 | 4 | 2023 |
High responsive UV photodetector on epitaxial non-polar GaN nanostructures grown on sapphire (10-10) using laser-MBE V Aggarwal, R Kumar, U Varshney, S Gautam, BK Pradhan, BS Yadav, ... Sensors and Actuators A: Physical 368, 115103, 2024 | 3 | 2024 |
Revealing the photo-sensing capabilities of a super-flexible, paper-based wearable a-Ga2O3 self-driven ultra-high-performance solar-blind photodetector U Varshney, A Sharma, P Singh, G Gupta Chemical Engineering Journal 496, 153910, 2024 | 2 | 2024 |
NO sensing properties of MoS2/WSe2 heterostructure at room temperature under UV light irradiation A Sharma, U Varshney, G Gupta Sensors and Actuators B: Chemical, 136454, 2024 | 1 | 2024 |
Harnessing UV light for enhanced room temperature ultra-low NO sensing via WSe2/GaN heterostructure A Sharma, U Varshney, A Yadav, G Gupta Applied Surface Science 649, 159103, 2024 | 1 | 2024 |
An investigation into the role of capping agents in optimizing the properties of ZnO nanostructures S Yadav, U Varshney, J Tawale, N Vijayan, G Gupta, GA Basheed, ... Journal of Materials Science: Materials in Electronics 35 (36), 1-15, 2024 | | 2024 |