متابعة
Gerard Ghibaudo
Gerard Ghibaudo
IMEP-LAHC/CROMA, Minatec-INP Grenoble
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عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
A new method for the extraction of MOSFET parameters‏
G Ghibaudo‏
Electronics letters 24, 543-544, 1988‏
9831988
Improved analysis of low frequency noise in field‐effect MOS transistors‏
G Ghibaudo, O Roux, C Nguyen‐Duc, F Balestra, J Brini‏
physica status solidi (a) 124 (2), 571-581, 1991‏
8671991
Review on high-k dielectrics reliability issues‏
G Ribes, J Mitard, M Denais, S Bruyere, F Monsieur, C Parthasarathy, ...‏
IEEE Transactions on Device and materials Reliability 5 (1), 5-19, 2005‏
6782005
Electrical noise and RTS fluctuations in advanced CMOS devices‏
G Ghibaudo, T Boutchacha‏
Microelectronics Reliability 42 (4-5), 573-582, 2002‏
4272002
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration‏
A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ...‏
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009‏
3442009
Ultimately thin double-gate SOI MOSFETs‏
T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ...‏
IEEE transactions on electron devices 50 (3), 830-838, 2003‏
3012003
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks‏
D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ...‏
IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015‏
2322015
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors‏
Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo‏
Journal of Applied Physics 107 (11), 2010‏
2322010
15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET‏
C Dupré, A Hubert, S Becu, M Jublot, V Maffini-Alvaro, C Vizioz, ...‏
2008 IEEE International Electron Devices Meeting, 1-4, 2008‏
1932008
Improved split CV method for effective mobility extraction in sub-0.1-μm Si MOSFETs‏
K Romanjek, F Andrieu, T Ernst, G Ghibaudo‏
IEEE Electron Device Letters 25 (8), 583-585, 2004‏
1912004
Ionizing radiation induced leakage current on ultra-thin gate oxides‏
A Scarpa, A Paccagnella, F Montera, G Ghibaudo, G Pananakakis, ...‏
IEEE Transactions on Nuclear Science 44 (6), 1818-1825, 1997‏
1881997
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices‏
B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ...‏
IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001‏
1752001
Device and circuit cryogenic operation for low temperature electronics‏
F Balestra, G Ghibaudo‏
Kluwer Academic Publishers, 2001‏
1662001
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects‏
S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo‏
Solid-State Electronics 51 (2), 239-244, 2007‏
1632007
3DVLSI with CoolCube process: An alternative path to scaling‏
P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ...‏
2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015‏
1582015
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment‏
F Monsieur, E Vincent, D Roy, S Bruyere, JC Vildeuil, G Pananakakis, ...‏
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th …, 2002‏
1562002
Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures‏
G Pananakakis, G Ghibaudo, R Kies, C Papadas‏
Journal of Applied Physics 78 (4), 2635-2641, 1995‏
1481995
Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling‏
A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ...‏
2006 International Electron Devices Meeting, 1-4, 2006‏
1472006
75 nm damascene metal gate and high-k integration for advanced CMOS devices‏
B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ...‏
Digest. International Electron Devices Meeting,, 355-358, 2002‏
1472002
Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow‏
A Fargeix, G Ghibaudo‏
Journal of applied physics 54 (12), 7153-7158, 1983‏
1471983
يتعذر على النظام إجراء العملية في الوقت الحالي. عاود المحاولة لاحقًا.
مقالات 1–20