| Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications JS Moon, S Wu, D Wong, I Milosavljevic, A Conway, P Hashimoto, M Hu, ... IEEE Electron Device Letters 26 (6), 348-350, 2005 | 174 | 2005 |
| GaN double heterojunction field effect transistor for microwave and millimeterwave power applications M Micovic, P Hashimoto, M Hu, I Milosavljevic, J Duvall, PJ Willadsen, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 145 | 2004 |
| 6:1 aspect ratio silicon pillar based thermal neutron detector filled with 10B RJ Nikolic, AM Conway, CE Reinhart, RT Graff, TF Wang, N Deo, ... Barry Chin Li Cheung Publications, 19, 2008 | 87 | 2008 |
| High aspect ratio composite structures with 48.5% thermal neutron detection efficiency Q Shao, LF Voss, AM Conway, RJ Nikolic, MA Dar, CL Cheung Applied Physics Letters 102 (6), 2013 | 80 | 2013 |
| Numerical simulations of pillar structured solid state thermal neutron detector: efficiency and gamma discrimination AM Conway, TF Wang, N Deo, CL Cheung, RJ Nikolic IEEE Transactions on Nuclear Science 56 (5), 2802-2807, 2009 | 57 | 2009 |
| Accelerated RF life testing of GaN HFETs AM Conway, M Chen, P Hashimoto, PJ Willadsen, M Micovic 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 48 | 2007 |
| Fabrication of Pillar-structured thermal neutron detectors RJ Nikolic, AM Conway, CE Reinhardt, RT Graff, TF Wang, N Deo, ... 2007 IEEE Nuclear Science Symposium Conference Record 2, 1577-1580, 2007 | 40 | 2007 |
| 6: 1 aspect ratio silicon pillar based thermal neutron detector filled with B10 RJ Nikolić, AM Conway, CE Reinhardt, RT Graff, TF Wang, N Deo, ... Applied Physics Letters 93 (13), 2008 | 37 | 2008 |
| A total internal reflection photoconductive switch M Bora, LF Voss, PV Grivickas, DL Hall, JB Alameda, NJ Kramer, ... IEEE Electron Device Letters 40 (5), 734-737, 2019 | 31 | 2019 |
| Photoconductive switch with high sub-bandgap responsivity in nitrogen-doped diamond DL Hall, LF Voss, P Grivickas, M Bora, AM Conway, P Ščajev, V Grivickas IEEE Electron Device Letters 41 (7), 1070-1073, 2020 | 28 | 2020 |
| Fabrication methodology of enhanced stability room temperature TlBr gamma detectors AM Conway, LF Voss, AJ Nelson, PR Beck, TA Laurence, RT Graff, ... IEEE Transactions on Nuclear Science 60 (2), 1231-1236, 2013 | 27 | 2013 |
| Overview of wide/ultrawide bandgap power semiconductor devices for distributed energy resources SK Mazumder, LF Voss, KM Dowling, A Conway, D Hall, RJ Kaplar, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (4 …, 2023 | 25 | 2023 |
| X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications AJ Nelson, AM Conway, BW Sturm, EM Behymer, CE Reinhardt, ... Journal of Applied Physics 106 (2), 2009 | 25 | 2009 |
| X-ray photoemission analysis of passivated Cd (1− x) ZnxTe surfaces for improved radiation detectors AJ Nelson, AM Conway, CE Reinhardt, JL Ferreira, RJ Nikolic, SA Payne Materials letters 63 (2), 180-181, 2009 | 25 | 2009 |
| Dynamic gate bias technique for improved linearity of GaN HFET power amplifiers AM Conway, Y Zhao, PM Asbeck, M Micovic, J Moon IEEE MTT-S International Microwave Symposium Digest, 2005., 499-502, 2005 | 25 | 2005 |
| Stress reduction for pillar filled structures RJ Nikolic, A Conway, Q Shao, L Voss, CL Cheung, MA Dar US Patent 9,121,947, 2015 | 22 | 2015 |
| Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties SE Sampayan, PV Grivickas, AM Conway, KC Sampayan, I Booker, ... Scientific reports 11 (1), 6859, 2021 | 19 | 2021 |
| Accurate thermal analysis of GaN HFETs AM Conway, PM Asbeck, JS Moon, M Micovic Solid-state electronics 52 (5), 637-643, 2008 | 19 | 2008 |
| Performance modeling of silicon carbide photoconductive switches for high-power and high-frequency applications S Rakheja, L Huang, S Hau-Riege, SE Harrison, LF Voss, AM Conway IEEE Journal of the Electron Devices Society 8, 1118-1128, 2020 | 18 | 2020 |
| Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (> 50%) and neutron to gamma discrimination (> 1.0 E4) RJ Nikolic, AM Conway, D Heineck, LF Voss, TF Wang, Q Shao US Patent 8,558,188, 2013 | 18 | 2013 |
