Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: A review DG Senesky, B Jamshidi, KB Cheng, AP Pisano
IEEE Sensors Journal 9 (11), 1472-1478, 2009
247 2009 A SiC MEMS resonant strain sensor for harsh environment applications RG Azevedo, DG Jones, AV Jog, B Jamshidi, DR Myers, L Chen, X Fu, ...
IEEE Sensors Journal 7 (4), 568-576, 2007
231 2007 Advances in silicon carbide science and technology at the micro-and nanoscales R Maboudian, C Carraro, DG Senesky, CS Roper
Journal of vacuum science & technology A 31 (5), 2013
197 2013 AlN/3C–SiC composite plate enabling high‐frequency and high‐Q micromechanical resonators CM Lin, YY Chen, VV Felmetsger, DG Senesky, AP Pisano
Advanced Materials 24 (20), 2722-2727, 2012
185 2012 Solar-blind photodetectors for harsh electronics DS Tsai, WC Lien, DH Lien, KM Chen, ML Tsai, DG Senesky, YC Yu, ...
Scientific reports 3 (1), 2628, 2013
145 2013 Temperature sensor based on 4H-silicon carbide pn diode operational from 20 C to 600 C N Zhang, CM Lin, DG Senesky, AP Pisano
Applied Physics Letters 104 (7), 2014
126 2014 High-Q aluminum nitride Lamb wave resonators with biconvex edges CM Lin, YJ Lai, JC Hsu, YY Chen, DG Senesky, AP Pisano
Applied Physics Letters 99 (14), 2011
111 2011 4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 WC Lien, DS Tsai, DH Lien, DG Senesky, JH He, AP Pisano
IEEE electron device letters 33 (11), 1586-1588, 2012
95 2012 AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices CM Lin, WC Lien, VV Felmetsger, MA Hopcroft, DG Senesky, AP Pisano
Applied Physics Letters 97 (14), 2010
94 2010 Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures CM Lin, YY Chen, VV Felmetsger, WC Lien, T Riekkinen, DG Senesky, ...
Journal of Micromechanics and Microengineering 23 (2), 025019, 2013
87 2013 Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating M Hou, H So, AJ Suria, AS Yalamarthy, DG Senesky
IEEE Electron Device Letters 38 (1), 56-59, 2016
85 2016 New developments in sensing technology for structural health monitoring SC Mukhopadhyay
Springer, 2011
82 2011 High responsivity, low dark current ultraviolet photodetectors based on two-dimensional electron gas interdigitated transducers PF Satterthwaite, AS Yalamarthy, NA Scandrette, AKM Newaz, ...
Acs Photonics 5 (11), 4277-4282, 2018
79 2018 Anchor loss reduction in AlN Lamb wave resonators using phononic crystal strip tethers CM Lin, JC Hsu, DG Senesky, AP Pisano
2014 IEEE International Frequency Control Symposium (FCS), 1-5, 2014
78 2014 Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures TK Nguyen, HP Phan, T Dinh, KM Dowling, ARM Foisal, DG Senesky, ...
Materials & Design 156, 441-445, 2018
71 2018 Profile evolution of high aspect ratio silicon carbide trenches by inductive coupled plasma etching KM Dowling, EH Ransom, DG Senesky
Journal of Microelectromechanical Systems 26 (1), 135-142, 2016
67 2016 Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring TA Pham, A Qamar, T Dinh, MK Masud, M Rais‐Zadeh, DG Senesky, ...
Advanced Science 7 (21), 2001294, 2020
62 2020 Continuous V-grooved AlGaN/GaN surfaces for high-temperature ultraviolet photodetectors H So, J Lim, DG Senesky
IEEE Sensors Journal 16 (10), 3633-3639, 2016
60 2016 Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure HP Phan, KM Dowling, TK Nguyen, T Dinh, DG Senesky, T Namazu, ...
Materials & Design 156, 16-21, 2018
52 2018 Sensitivity of 2DEG-based Hall-effect sensors at high temperatures HS Alpert, CA Chapin, KM Dowling, SR Benbrook, H Köck, ...
Review of Scientific Instruments 91 (2), 2020
46 2020 