Single dopants in semiconductors PM Koenraad, ME Flatté
Nature materials 10 (2), 91-100, 2011
537 2011 Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy DM Bruls, J Vugs, PM Koenraad, HWM Salemink, JH Wolter, ...
Applied physics letters 81 (9), 1708-1710, 2002
292 2002 Spatial structure of an individual Mn acceptor in GaAs AM Yakunin, AY Silov, PM Koenraad, JH Wolter, W Van Roy, J De Boeck, ...
Physical Review Letters 92 (21), 216806, 2004
260 2004 Oscillatory persistent currents in self-assembled quantum rings N Kleemans, IMA Bominaar-Silkens, VM Fomin, VN Gladilin, D Granados, ...
Physical review letters 99 (14), 146808, 2007
259 2007 Controlled charge switching on a single donor with a scanning tunneling microscope K Teichmann, M Wenderoth, S Loth, RG Ulbrich, JK Garleff, ...
Physical review letters 101 (7), 076103, 2008
225 2008 Atomic-scale structure of self-assembled In (Ga) As quantum rings in GaAs P Offermans, PM Koenraad, JH Wolter, D Granados, JM Garcia, ...
Applied Physics Letters 87 (13), 2005
178 2005 Strong carrier–phonon coupling in lead halide perovskite nanocrystals CM Iaru, JJ Geuchies, PM Koenraad, D Vanmaekelbergh, AY Silov
ACS nano 11 (11), 11024-11030, 2017
151 2017 Capping process of InAs∕ GaAs quantum dots studied by cross-sectional scanning tunneling microscopy Q Gong, P Offermans, R Nötzel, PM Koenraad, JH Wolter
Applied physics letters 85 (23), 5697-5699, 2004
139 2004 Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs P Offermans, PM Koenraad, JH Wolter, K Pierz, M Roy, PA Maksym
Physical Review B—Condensed Matter and Materials Physics 72 (16), 165332, 2005
121 2005 Theory of electron energy spectrum and Aharonov-Bohm effect in self-assembled VM Fomin, VN Gladilin, SN Klimin, JT Devreese, N Kleemans, ...
Physical Review B—Condensed Matter and Materials Physics 76 (23), 235320, 2007
120 2007 GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations JM Ulloa, R Gargallo-Caballero, M Bozkurt, M Del Moral, A Guzmán, ...
Physical Review B—Condensed Matter and Materials Physics 81 (16), 165305, 2010
111 2010 Suppression of InAs∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer JM Ulloa, IWD Drouzas, PM Koenraad, DJ Mowbray, MJ Steer, HY Liu, ...
Applied physics letters 90 (21), 2007
109 2007 Electronic and optical properties of C Cornet, A Schliwa, J Even, F Doré, C Celebi, A Létoublon, E Macé, ...
Physical Review B—Condensed Matter and Materials Physics 74 (3), 035312, 2006
106 2006 Growth and Optical Properties of Direct Band Gap Ge/Ge0.87 Sn0.13 Core/Shell Nanowire Arrays S Assali, A Dijkstra, A Li, S Koelling, MA Verheijen, L Gagliano, ...
Nano letters 17 (3), 1538-1544, 2017
102 2017 Enhanced donor binding energy close to a semiconductor surface AP Wijnheijmer, JK Garleff, K Teichmann, M Wenderoth, S Loth, ...
Physical review letters 102 (16), 166101, 2009
94 2009 Warping a single Mn acceptor wavefunction by straining the GaAs host AM Yakunin, AY Silov, PM Koenraad, JM Tang, ME Flatté, JL Primus, ...
Nature Materials 6 (7), 512-515, 2007
89 2007 Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy JH Blokland, M Bozkurt, JM Ulloa, D Reuter, AD Wieck, PM Koenraad, ...
Applied Physics Letters 94 (2), 2009
81 2009 Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy DM Bruls, PM Koenraad, HWM Salemink, JH Wolter, M Hopkinson, ...
Applied Physics Letters 82 (21), 3758-3760, 2003
80 2003 Smooth and Self‐Similar SiO2 ‐like Films on Polymers Synthesized in Roll‐to‐Roll Atmospheric Pressure‐PECVD for Gas Diffusion Barrier Applications PA Premkumar, SA Starostin, M Creatore, H de Vries, RMJ Paffen, ...
Plasma Processes and Polymers 7 (8), 635-639, 2010
79 2010 Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy JG Keizer, J Bocquel, PM Koenraad, T Mano, T Noda, K Sakoda
Applied Physics Letters 96 (6), 2010
79 2010