متابعة
Juan B. Roldán
Juan B. Roldán
Department of Electronics and Computer Technology. Granada University (Spain)
بريد إلكتروني تم التحقق منه على ugr.es
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Recommended methods to study resistive switching devices‏
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...‏
Advanced Electronic Materials 5 (1), 1800143, 2019‏
6522019
Memristive technologies for data storage, computation, encryption, and radio-frequency communication‏
M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ...‏
Science 376 (6597), eabj9979, 2022‏
4522022
Standards for the characterization of endurance in resistive switching devices‏
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...‏
ACS nano 15 (11), 17214-17231, 2021‏
1942021
Hybrid 2D/CMOS microchips for memristive applications‏
K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng, O Alharbi, ...‏
Nature, 1-3, 2023‏
1732023
Stochastic resonance in a metal-oxide memristive device‏
AN Mikhaylov, DV Guseinov, AI Belov, DS Korolev, VA Shishmakova, ...‏
Chaos, Solitons & Fractals 144, 110723, 2021‏
1472021
Surface roughness at the interfaces in fully depleted silicon-on-insulator inversion layers‏
F Gámiz, JB Roldán, JA López-Villanueva, P Cartujo-Cassinello, ...‏
Journal of Applied Physics 86 (12), 6854-6863, 1999‏
1471999
Hardware implementation of memristor-based artificial neural networks‏
F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ...‏
Nature communications 15 (1), 1974, 2024‏
1092024
Advanced Data Encryption​ using 2D Materials‏
C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ...‏
Advanced Materials 33 (27), 2100185, 2021‏
1062021
Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's‏
F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo‏
IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998‏
1021998
Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects‏
JB Roldan, A Godoy, F Gamiz, M Balaguer‏
IEEE transactions on electron devices 55 (1), 411-416, 2007‏
1012007
Variability in Resistive Memories‏
JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ...‏
Advanced Intelligent Systems, 2200338, 2023‏
1002023
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility‏
L Donetti, F Gámiz, JB Roldán, A Godoy‏
Journal of Applied Physics 100 (1), 2006‏
922006
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach‏
S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ...‏
Journal of Physics D: Applied Physics 53 (22), 225106, 2020‏
872020
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs‏
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...‏
Microelectronic Engineering 214, 104-109, 2019‏
872019
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates‏
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos‏
Journal of Applied Physics 92 (1), 288-295, 2002‏
852002
Simulation of thermal reset transitions in resistive switching memories including quantum effects‏
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...‏
Journal of Applied Physics 115 (21), 2014‏
812014
Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers‏
F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...‏
Journal of Applied Physics 89 (3), 1764-1770, 2001‏
802001
A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−xGex channel MOSFETs‏
JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller‏
Journal of applied physics 80 (9), 5121-5128, 1996‏
791996
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs‏
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...‏
Journal of Physics D: Applied Physics 50 (33), 335103, 2017‏
782017
An in-depth simulation study of thermal reset transitions in resistive switching memories‏
MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ...‏
Journal of Applied Physics 114 (14), 2013‏
752013
يتعذر على النظام إجراء العملية في الوقت الحالي. عاود المحاولة لاحقًا.
مقالات 1–20