مقالات بحثية تمّ التفويض بإتاحتها للجميع - Juan B. Roldánمزيد من المعلومات
عدد المقالات البحثية غير المتاحة للجميع في أي موقع: 43
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...
Microelectronic Engineering 214, 104-109, 2019
التفويضات: German Research Foundation, Government of Spain
A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach
G González-Cordero, JB Roldan, F Jiménez-Molinos, J Suñè, S Long, ...
Semiconductor Science and Technology 31 (11), 115013, 2016
التفويضات: Government of Spain
Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories
JB Roldán, FJ Alonso, AM Aguilera, D Maldonado, M Lanza
Journal of Applied Physics 125 (17), 174504, 2019
التفويضات: Government of Spain
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
التفويضات: Government of Spain
An analytical compact model for Schottky-barrier double gate MOSFETs
M Balaguer, B Iñiguez, JB Roldán
Solid-state electronics 64 (1), 78-84, 2011
التفويضات: Government of Spain
A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs
MA Villena, JB Roldán, MB González, P González-Rodelas, ...
Solid-State Electronics 118, 56-60, 2016
التفويضات: Government of Spain
Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
D Maldonado, F Aguirre, G González-Cordero, AM Roldán, MB González, ...
Journal of Applied Physics 130 (5), 2021
التفويضات: Government of Spain
Exploring ReRAM-based memristors in the charge-flux domain, a modeling approach
R Picos, JB Roldan, MM Al Chawa, F Jimenez-Molinos, MA Villena, ...
Memristive Systems (MEMRISYS) 2015 International Conference on, 2015
التفويضات: Government of Spain
Simulation of RRAM memory circuits, a Verilog-A compact modeling approach
G González-Cordero, JB Roldan, F Jiménez-Molinos
2016 Conference on Design of Circuits and Integrated Systems (DCIS), 1-6, 2016
التفويضات: Government of Spain
A physically based circuit model to account for variability in memristors with resistive switching operation
R Picos, JB Roldan, MM Al Chawa, F Jimenez-Molinos, E Garcia-Moreno
2016 Conference on Design of Circuits and Integrated Systems (DCIS), 1-6, 2016
التفويضات: Government of Spain
Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation
M Balaguer, JB Roldan, L Donetti, F Gamiz
Solid-state electronics 67 (1), 30-37, 2012
التفويضات: Government of Spain
An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors
P González, MJ Ibáñez, AM Roldán, JB Roldán
Mathematics and Computers in Simulation, 2015
التفويضات: Government of Spain
A Verilog-AMS photodiode model including lateral effects
B Blanco-Filgueira, P López, JB Roldán
Microelectronics Journal, 2012
التفويضات: Government of Spain
An analytical energy model for the reset transition in unipolar resistive-switching rams
MM Al Chawa, R Picos, E Garcia-Moreno, SG Stavrinides, JB Roldan, ...
2016 18th Mediterranean Electrotechnical Conference (MELECON), 1-4, 2016
التفويضات: Government of Spain
Revivals of electron currents and topological-band insulator transitions in 2D gapped Dirac materials
E Romera, JC Bolívar, JB Roldán, F de los Santos
Europhysics Letters 115 (2), 20008, 2016
التفويضات: Government of Spain
Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation
AJ Pérez-Ávila, G González-Cordero, E Pérez, EPB Quesada, ...
2020 XXXV Conference on Design of Circuits and Integrated Systems (DCIS), 1-6, 2020
التفويضات: German Research Foundation, Government of Spain
Parameter Extraction Methods for Assessing Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices at Wafer Scale
E Perez, D Maldonado, EPB Quesada, MK Mahadevaiah, ...
IEEE Transactions on Electron Devices, 2023
التفويضات: Government of Spain, Federal Ministry of Education and Research, Germany
Study of RTN signals in resistive switching devices based on neural networks
G González-Cordero, MB González, M Zabala, K Kalam, A Tamm, ...
Solid-State Electronics 183, 108034, 2021
التفويضات: Government of Spain
Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies
E Perez, D Maldonado, C Acal, JE Ruiz-Castro, AM Aguilera, ...
Solid-State Electronics 176, 107961, 2021
التفويضات: German Research Foundation, Government of Spain
Transient SPICE simulation of Ni/HfO2/Si-n+ resistive memories
G González, F Jiménez-Molinos, JB Roldán, MB González, ...
2016 Conference on Design of Circuits and Integrated Systems (DCIS), 1-6, 2016
التفويضات: Government of Spain
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