Low-power and scalable retention-enhanced IGZO TFT eDRAM-based charge-domain computing J Liu, C Sun, W Tang, Z Zheng, Y Liu, H Yang, C Jiang, K Ni, X Gong, X Li
2021 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2021
25 2021 FeFET-based low-power bitwise logic-in-memory with direct write-back and data-adaptive dynamic sensing interface M Lee, W Tang, B Xue, J Wu, M Ma, Y Wang, Y Liu, D Fan, V Narayanan, ...
Proceedings of the ACM/IEEE International Symposium on Low Power Electronics …, 2020
24 2020 Almost-nonvolatile IGZO-TFT-based near-sensor in-memory computing J Liu, W Tang, Y Liu, H Yang, X Li
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2021
16 2021 Samba: Single-adc multi-bit accumulation compute-in-memory using nonlinearity-compensated fully parallel analog adder tree Y Chen, G Yin, M Zhou, W Tang, Z Yang, M Lee, X Du, J Yue, J Liu, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 70 (7), 2762-2773, 2023
11 2023 Computing-in-memory with thin-film transistors: challenges and opportunities W Tang, J Liu, H Li, D Chen, C Jiang, X Li, H Yang
Flexible and Printed Electronics 7 (2), 024001, 2022
9 2022 A 66.67kHz 4.953 nJ/Conv-Step 5b Fully Integrated Asynchronous SAR ADC Using H Li, J Liu, W Tang, H Yang, C Jiang, S Zhang, X Li
2023 IEEE International Flexible Electronics Technology Conference (IFETC), 1-3, 2023
6 2023 Low-power and scalable BEOL-compatible IGZO TFT eDRAM-based charge-domain computing W Tang, J Liu, C Sun, Z Zheng, Y Liu, H Yang, C Jiang, K Ni, X Gong, X Li
IEEE Transactions on Circuits and Systems I: Regular Papers 70 (12), 5166-5179, 2023
5 2023 Fefet-based logic-in-memory supporting sa-free write-back and fully dynamic access with reduced bitline charging activity and recycled bitline charge W Tang, M Lee, J Wu, Y Xu, Y Yu, Y Liu, K Ni, Y Wang, H Yang, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 70 (6), 2398-2411, 2023
5 2023 Victor: A variation-resilient approach using cell-clustered charge-domain computing for high-density high-throughput MLC CiM M Lee, W Tang, Y Chen, J Wu, H Zhong, Y Xu, Y Liu, H Yang, ...
2023 60th ACM/IEEE Design Automation Conference (DAC), 1-6, 2023
4 2023 30 Mb/mm2 /layer 3D eDRAM Computing-in-Memory with Embedded BEOL Peripherals and Local Layer-wise Calibration based on First-Demonstrated Vertically-stacked CAA … W Tang, C Chen, J Liu, C Zhang, C Gu, X Duan, H Yang, L Li, X Li, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
3 2023 Hidden-ROM: A compute-in-ROM architecture to deploy large-scale neural networks on chip with flexible and scalable post-fabrication task transfer capability Y Chen, G Yin, M Lee, W Tang, Z Yang, Y Liu, H Yang, X Li
Proceedings of the 41st IEEE/ACM International Conference on Computer-Aided …, 2022
3 2022 Cramming More Weight Data Onto Compute-in-Memory Macros for High Task-Level Energy Efficiency Using Custom ROM With 3984-kb/mm2 Density in 65-nm … G Yin, Y Chen, M Zhou, W Tang, M Lee, Z Yang, T Liao, X Du, ...
IEEE Journal of Solid-State Circuits 59 (6), 1912-1925, 2023
2 2023 Compute-in-memory devices, neural network accelerators, and electronic devices X Li, G Yin, Y Chen, L Cheong, L Tianyu, W Tang, LEE Mingyen, DU Xirui, ...
US Patent App. 18/342,917, 2024
1 2024 TFT-based near-sensor in-memory computing: Circuits and architecture perspectives of large-area eDRAM and ROM CiM chips J Liu, W Tang, H Li, D Chen, W Long, Y Liu, C Jiang, H Yang, X Li
IEEE Transactions on Circuits and Systems I: Regular Papers 71 (2), 620-633, 2023
1 2023 A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface G Yin, M Zhou, Y Chen, W Tang, Z Yang, M Lee, X Du, J Yue, J Liu, ...
arXiv preprint arXiv:2212.04320, 2022
1 2022 High-density energy-efficient charge-domain computing based on CAA-IGZO TFT with BEOL-compatible 3D integration W Tang, J Liu, H Yang, C Jiang, X Li
2022 IEEE International Flexible Electronics Technology Conference (IFETC), 1-2, 2022
1 2022 First Demonstration of AFeFET-Based Capacitor-Less eDRAM Computing-in-Memory Featuring 4.84 Mb/mm2 High Memory Density, 105 s Long Retention Time, and >10 … H Zhong, Z Zheng, L Jiao, Z Zhou, C Sun, W Tang, Z Chen, Y Kang, ...
2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024
2024 A 28nm 166.9 TOPS/W x Mb/mm2 DRAM-Free QLC Compute-in-ROM Macro Supporting High Task-Level Inference Energy Efficiency for Tiny AI Edge Devices LA Cheong, C Wang, M Zhou, T Liao, M Lee, Y Ke, W Tang, Y Chen, X Du, ...
2024 IEEE Asian Solid-State Circuits Conference (A-SSCC), 1-3, 2024
2024 Devices, chips, and electronic equipment for computing-in-memory X Li, W Tang, J Liu, C Jiang, Y Liu, H Yang
US Patent 12,105,986, 2024
2024 Cross-Layer Exploration and Chip Demonstration of In-Sensor Computing for Large-Area Applications with Differential-Frame ROM-Based Compute-In-Memory J Liu, W Tang, D Chen, C Jiang, H Yang, X Li
Proceedings of the 61st ACM/IEEE Design Automation Conference, 1-6, 2024
2024 
Huazhong YangProfessor of Electronics Engineering, Tsinghua Universityبريد إلكتروني تم التحقق منه على tsinghua.edu.cn
