| Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ... Journal of Applied Physics 120 (12), 2016 | 194 | 2016 |
| Diffusion, activation, and regrowth behavior of high dose P implants in Ge A Satta, E Simoen, R Duffy, T Janssens, T Clarysse, A Benedetti, ... Applied Physics Letters 88 (16), 2006 | 130 | 2006 |
| Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors R Duffy, MJH Van Dal, BJ Pawlak, M Kaiser, RGR Weemaes, B Degroote, ... Applied Physics Letters 90 (24), 2007 | 123 | 2007 |
| Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography MJH Van Dal, N Collaert, G Doornbos, G Vellianitis, G Curatola, ... 2007 IEEE symposium on VLSI technology, 110-111, 2007 | 107 | 2007 |
| Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ... npj 2D Materials and Applications 3 (1), 33, 2019 | 95 | 2019 |
| Semiconductor substrate with solid phase epitaxial regrowth with reduced junction leakage and method of producing same BJ Pawlak, RJ Duffy, R Lindsay US Patent 8,187,959, 2012 | 95 | 2012 |
| Boron uphill diffusion during ultrashallow junction formation R Duffy, VC Venezia, A Heringa, TWT Hüsken, MJP Hopstaken, ... Applied Physics Letters 82 (21), 3647-3649, 2003 | 89 | 2003 |
| Suppression of phosphorus diffusion by carbon co-implantation BJ Pawlak, R Duffy, T Janssens, W Vandervorst, SB Felch, EJH Collart, ... Applied physics letters 89 (6), 2006 | 81 | 2006 |
| CMOS device optimization for mixed-signal technologies PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 72 | 2001 |
| Gate current: Modeling,/spl Delta/L extraction and impact on RF performance R Van Langevelde, AJ Scholten, R Duffy, FN Cubaynes, MJ Knitel, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 70 | 2001 |
| Optimized laser thermal annealing on germanium for high dopant activation and low leakage current M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ... IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014 | 60 | 2014 |
| Boron diffusion in amorphous silicon and the role of fluorine R Duffy, VC Venezia, A Heringa, BJ Pawlak, MJP Hopstaken, GCJ Maas, ... Applied physics letters 84 (21), 4283-4285, 2004 | 60 | 2004 |
| Experimental studies of dose retention and activation in fin field-effect-transistor-based structures J Mody, R Duffy, P Eyben, J Goossens, A Moussa, W Polspoel, ... Journal of Vacuum Science & Technology B 28 (1), C1H5-C1H13, 2010 | 59 | 2010 |
| Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals R Duffy, T Dao, Y Tamminga, K Van Der Tak, F Roozeboom, E Augendre Applied physics letters 89 (7), 2006 | 59 | 2006 |
| Progress on germanium–tin nanoscale alloys J Doherty, S Biswas, E Galluccio, CA Broderick, A Garcia-Gil, R Duffy, ... Chemistry of Materials 32 (11), 4383-4408, 2020 | 55 | 2020 |
| Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance R Duffy, G Curatola, BJ Pawlak, G Doornbos, K Van Der Tak, P Breimer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 52 | 2008 |
| Defect evolution and dopant activation in laser annealed Si and Ge F Cristiano, M Shayesteh, R Duffy, K Huet, F Mazzamuto, Y Qiu, M Quillec, ... Materials Science in Semiconductor Processing 42, 188-195, 2016 | 51 | 2016 |
| Organo-arsenic molecular layers on silicon for high-density doping J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ... ACS applied materials & interfaces 7 (28), 15514-15521, 2015 | 50 | 2015 |
| Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface R Duffy, VC Venezia, J Loo, MJP Hopstaken, MA Verheijen, ... Applied Physics Letters 86 (8), 2005 | 50 | 2005 |
| Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy Journal of applied physics 97 (10), 2005 | 43 | 2005 |
Maryam shayestehUniversity of Southamptonبريد إلكتروني تم التحقق منه على soton.ac.uk
