Origin of luminescence from InGaN diodes KP O'donnell, RW Martin, PG Middleton
Physical Review Letters 82 (1), 237, 1999
643 1999 The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
479 2020 Exciton localization and the Stokes’ shift in InGaN epilayers RW Martin, PG Middleton, KP O’donnell, W Van der Stricht
Applied physics letters 74 (2), 263-265, 1999
392 1999 Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes HW Choi, CW Jeon, MD Dawson, PR Edwards, RW Martin, S Tripathy
Journal of Applied Physics 93 (10), 5978-5982, 2003
198 2003 Anomalous Ion Channeling in K Lorenz, N Franco, E Alves, IM Watson, RW Martin, KP O’donnell
Physical review letters 97 (8), 085501, 2006
185 2006 An organic down-converting material for white-light emission from hybrid LEDs NJ Findlay, J Bruckbauer, AR Inigo, B Breig, S Arumugam, DJ Wallis, ...
Advanced Materials (Deerfield Beach, Fla.) 26 (43), 7290, 2014
139 2014 Identification of the prime optical center in IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ...
Physical Review B—Condensed Matter and Materials Physics 81 (8), 085209, 2010
133 2010 Optical properties of high quality Cu2ZnSnSe4 thin films F Luckert, DI Hamilton, MV Yakushev, NS Beattie, G Zoppi, M Moynihan, ...
Applied Physics Letters 99 (6), 2011
130 2011 High extraction efficiency InGaN micro-ring light-emitting diodes HW Choi, MD Dawson, PR Edwards, RW Martin
Applied physics letters 83 (22), 4483-4485, 2003
125 2003 Raman-scattering study of the InGaN alloy over the whole composition range S Hernández, R Cuscó, D Pastor, L Artús, KP O’Donnell, RW Martin, ...
Journal of Applied Physics 98 (1), 2005
122 2005 Structural analysis of InGaN epilayers KP O'Donnell, JFW Mosselmans, RW Martin, S Pereira, ME White
Journal of Physics: Condensed Matter 13 (32), 6977, 2001
120 2001 Two-dimensional spin confinement in strained-layer quantum wells PJW RW Martin, RJ Nicholas, GJ Rees, SK Haywood, NJ Mason
Phys. Rev. B 42, 9237, 1990
116 1990 Selectively excited photoluminescence from Eu-implanted GaN K Wang, RW Martin, KP O’Donnell, V Katchkanov, E Nogales, K Lorenz, ...
Applied Physics Letters 87 (11), 2005
114 2005 Cathodoluminescence nano-characterization of semiconductors PR Edwards, RW Martin
Semiconductor Science and Technology 26 (6), 064005, 2011
112 2011 Optical energies of AlInN epilayers K Wang, RW Martin, D Amabile, PR Edwards, S Hernandez, E Nogales, ...
Journal of Applied Physics 103 (7), 2008
96 2008 High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures J Bruckbauer, PR Edwards, T Wang, RW Martin
Applied Physics Letters 98 (14), 2011
92 2011 High-temperature annealing and optical activation of Eu-implanted GaN K Lorenz, U Wahl, E Alves, S Dalmasso, RW Martin, KP O'Donnell, ...
Applied physics letters 85 (14), 2712-2714, 2004
90 2004 Highly mismatched crystalline and amorphous GaN1− xAsx alloys in the whole composition range KM Yu, SV Novikov, R Broesler, IN Demchenko, JD Denlinger, ...
Journal of Applied Physics 106 (10), 2009
88 2009 Composition-dependent band gap and band-edge bowing in AlInN: a combined theoretical and experimental study S Schulz, MA Caro, LT Tan, PJ Parbrook, RW Martin, EP O'Reilly
Applied Physics Express 6 (12), 121001, 2013
84 2013 Charge carrier localised in zero-dimensional (CH3 NH3 )3 Bi2 I9 clusters C Ni, G Hedley, J Payne, V Svrcek, C McDonald, LK Jagadamma, ...
Nature communications 8 (1), 170, 2017
83 2017 