| W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (3), 349-352, 2020 | 113 | 2020 |
| MOVPE growth of semipolar III-nitride semiconductors on CVD graphene P Gupta, AA Rahman, N Hatui, MR Gokhale, MM Deshmukh, ... Journal of crystal growth 372, 105-108, 2013 | 93 | 2013 |
| High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (5), 681-684, 2020 | 79 | 2020 |
| Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content MR Laskar, T Ganguli, AA Rahman, A Mukherjee, N Hatui, MR Gokhale, ... Journal of Applied Physics 109 (1), 2011 | 61 | 2011 |
| Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction M Frentrup, N Hatui, T Wernicke, J Stellmach, A Bhattacharya, M Kneissl Journal of Applied Physics 114 (21), 2013 | 54 | 2013 |
| Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current A Raj, A Krishna, N Hatui, C Gupta, R Jang, S Keller, UK Mishra IEEE Electron Device Letters 41 (2), 220-223, 2020 | 53 | 2020 |
| The mechanism of Ni-assisted GaN nanowire growth CB Maliakkal, N Hatui, RD Bapat, BA Chalke, AA Rahman, ... Nano Letters 16 (12), 7632-7638, 2016 | 52 | 2016 |
| First demonstration of AlSiO as gate dielectric in GaN FETs; applied to a high performance OG-FET C Gupta, SH Chan, A Agarwal, N Hatui, S Keller, UK Mishra IEEE Electron Device Letters 38 (11), 1575-1578, 2017 | 51 | 2017 |
| 6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ... IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021 | 50 | 2021 |
| N-polar GaN-on-Sapphire deep recess HEMTs with high W-band power density B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ... IEEE Electron Device Letters 41 (11), 1633-1636, 2020 | 46 | 2020 |
| AlGaN/GaN Superlattice Based p‐channel Field Effect Transistor (pFET) with TMAH Treatment A Krishna, A Raj, N Hatui, O Koksaldi, R Jang, S Keller, UK Mishra physica status solidi (a), 2019 | 35* | 2019 |
| Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ... IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023 | 33 | 2023 |
| Investigation of nitrogen polar p-type doped GaN/AlxGa (1-x) N superlattices for applications in wide-bandgap p-type field effect transistors A Krishna, A Raj, N Hatui, S Keller, UK Mishra Applied Physics Letters 115 (17), 2019 | 32 | 2019 |
| Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers P Gupta, AA Rahman, N Hatui, JB Parmar, BA Chalke, RD Bapat, ... Applied Physics Letters 103 (18), 2013 | 27 | 2013 |
| MOVPE growth of semipolar (11-22) Al(1− x)In(x)N across the alloy composition range (0≤ x≤ 0.55) N Hatui, M Frentrup, AA Rahman, A Kadir, S Subramanian, M Kneissl, ... Journal of Crystal Growth 411, 106-109, 2015 | 22 | 2015 |
| High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers MR Laskar, T Ganguli, N Hatui, AA Rahman, MR Gokhale, A Bhattacharya Journal of crystal growth 315 (1), 208-210, 2011 | 22 | 2011 |
| First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ... IEEE Microwave and Wireless Technology Letters 33 (6), 683-686, 2023 | 20 | 2023 |
| GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and> 50 mA/mm on-current A Raj, A Krishna, N Hatui, B Romanczyk, C Wurm, M Guidry, R Hamwey, ... 2021 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2021 | 20 | 2021 |
| Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN SS Pasayat, N Hatui, W Li, C Gupta, S Nakamura, SP Denbaars, S Keller, ... Applied Physics Letters 117 (6), 2020 | 20 | 2020 |
| Anisotropic structural and optical properties of a-plane (112¯0) AlInN nearly-lattice-matched to GaN MR Laskar, T Ganguli, AA Rahman, A Arora, N Hatui, MR Gokhale, ... Applied Physics Letters 98 (18), 2011 | 20 | 2011 |
Umesh MishraUCSBبريد إلكتروني تم التحقق منه على ece.ucsb.edu
