متابعة
Guy Brammertz
Guy Brammertz
Researcher, imec-imomec
بريد إلكتروني تم التحقق منه على imec.be - الصفحة الرئيسية
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates‏
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...‏
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008‏
4582008
Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells‏
G Brammertz, M Buffière, S Oueslati, H ElAnzeery, K Ben Messaoud, ...‏
Applied Physics Letters 103 (16), 2013‏
2682013
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures‏
G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ...‏
Applied physics letters 91 (13), 2007‏
1412007
Capacitance-voltage characterization of GaAs–Al2O3 interfaces‏
G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ...‏
Applied Physics Letters 93 (18), 2008‏
1392008
On the interface state density at In0. 53Ga0. 47As/oxide interfaces‏
G Brammertz, HC Lin, M Caymax, M Meuris, M Heyns, M Passlack‏
Applied Physics Letters 95 (20), 2009‏
137*2009
Electrical study of sulfur passivated In0. 53Ga0. 47As MOS capacitor and transistor with ALD Al2O3 as gate insulator‏
HC Lin, WE Wang, G Brammertz, M Meuris, M Heyns‏
Microelectronic Engineering 86 (7-9), 1554-1557, 2009‏
1342009
Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods‏
É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...‏
Applied Physics Letters 94 (10), 2009‏
1292009
A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied toand InP Capacitors‏
G Brammertz, A Alian, DHC Lin, M Meuris, M Caymax, WE Wang‏
IEEE Transactions on Electron Devices 58 (11), 3890-3897, 2011‏
1232011
High quality Ge virtual substrates on Si wafers with standard STI patterning‏
R Loo, G Wang, L Souriau, JC Lin, S Takeuchi, G Brammertz, M Caymax‏
Journal of The Electrochemical Society 157 (1), H13, 2009‏
1202009
High efficiency perovskite solar cells using a PCBM/ZnO double electron transport layer and a short air-aging step‏
W Qiu, M Buffiere, G Brammertz, UW Paetzold, L Froyen, P Heremans, ...‏
Organic electronics 26, 30-35, 2015‏
1132015
Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates‏
G Brammertz, Y Mols, S Degroote, V Motsnyi, M Leys, G Borghs, ...‏
Journal of applied physics 99 (9), 2006‏
962006
Border traps in Ge/III–V channel devices: Analysis and reliability aspects‏
E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ...‏
IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013‏
892013
Physical and electrical characterization of high-performance Cu2ZnSnSe4 based thin film solar cells‏
S Oueslati, G Brammertz, M Buffiere, H ElAnzeery, O Touayar, C Köble, ...‏
Thin Solid Films 582, 224-228, 2015‏
882015
The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces‏
HC Lin, G Brammertz, K Martens, G De Valicourt, L Negre, WE Wang, ...‏
Applied physics letters 94 (15), 2009‏
882009
Selective area growth of high quality InP on Si (001) substrates‏
G Wang, MR Leys, R Loo, O Richard, H Bender, N Waldron, G Brammertz, ...‏
Applied Physics Letters 97 (12), 2010‏
872010
KCN Chemical Etch for Interface Engineering in Cu2ZnSnSe4 Solar Cells‏
M Buffière, G Brammertz, S Sahayaraj, M Batuk, S Khelifi, D Mangin, ...‏
ACS applied materials & interfaces 7 (27), 14690-14698, 2015‏
852015
Capacitance–voltage characterization of GaAs–oxide interfaces‏
G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ...‏
Journal of the Electrochemical Society 155 (12), H945, 2008‏
842008
Advancing CMOS beyond the Si roadmap with Ge and III/V devices‏
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...‏
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011‏
832011
Electrical properties of III-V/oxide interfaces‏
G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...‏
ECS transactions 19 (5), 375, 2009‏
832009
Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution‏
D Lin, G Brammertz, S Sioncke, C Fleischmann, A Delabie, K Martens, ...‏
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009‏
792009
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مقالات 1–20