| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 652 | 2019 |
| The development of integrated circuits based on two-dimensional materials K Zhu, C Wen, AA Aljarb, F Xue, X Xu, V Tung, X Zhang, HN Alshareef, ... Nature Electronics 4 (11), 775-785, 2021 | 233 | 2021 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 194 | 2021 |
| Hybrid 2D–CMOS microchips for memristive applications K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng, O Alharbi, ... Nature 618 (7963), 57-62, 2023 | 173 | 2023 |
| 28.2%-efficient, outdoor-stable perovskite/silicon tandem solar cell J Liu, E Aydin, J Yin, M De Bastiani, FH Isikgor, AU Rehman, E Yengel, ... Joule 5 (12), 3169-3186, 2021 | 165 | 2021 |
| Advanced Data Encryption using 2D Materials C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ... Advanced Materials 33 (27), 2100185, 2021 | 107 | 2021 |
| Variability and yield in h‐BN‐based memristive circuits: the role of each type of defect Y Shen, W Zheng, K Zhu, Y Xiao, C Wen, Y Liu, X Jing, M Lanza Advanced Materials 33 (41), 2103656, 2021 | 89 | 2021 |
| Graphene–boron nitride–graphene cross-point memristors with three stable resistive states K Zhu, X Liang, B Yuan, MA Villena, C Wen, T Wang, S Chen, F Hui, Y Shi, ... ACS applied materials & interfaces 11 (41), 37999-38005, 2019 | 79 | 2019 |
| Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices F Hui, MA Villena, W Fang, AY Lu, J Kong, Y Shi, X Jing, K Zhu, M Lanza 2D Materials 5 (3), 031011, 2018 | 61 | 2018 |
| Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study X Li, T Zanotti, T Wang, K Zhu, FM Puglisi, M Lanza Advanced Functional Materials 31 (27), 2102172, 2021 | 52 | 2021 |
| Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology W Zheng, F Saiz, Y Shen, K Zhu, Y Liu, C McAleese, B Conran, X Wang, ... Advanced Materials 34 (48), 2104138, 2022 | 43 | 2022 |
| Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing P Kumar, K Zhu, X Gao, SD Wang, M Lanza, CS Thakur npj 2D Materials and Applications 6 (1), 8, 2022 | 43 | 2022 |
| Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials MA Villena, F Hui, X Liang, Y Shi, B Yuan, X Jing, K Zhu, S Chen, ... Microelectronics Reliability 102, 113410, 2019 | 28 | 2019 |
| Electroforming in metal-oxide memristive synapses T Wang, Y Shi, FM Puglisi, S Chen, K Zhu, Y Zuo, X Li, X Jing, T Han, ... ACS applied materials & interfaces 12 (10), 11806-11814, 2020 | 27 | 2020 |
| Advanced data encryption using two-dimensional materials M Lanza, C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, ... Adv. Mater 33 (2100185.10), 1002, 2021 | 26 | 2021 |
| Solution-processed memristors: performance and reliability S Pazos, X Xu, T Guo, K Zhu, HN Alshareef, M Lanza Nature Reviews Materials, 1-16, 2024 | 21 | 2024 |
| Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller S Pazos, W Zheng, T Zanotti, F Aguirre, T Becker, Y Shen, K Zhu, Y Yuan, ... Nanoscale 15 (5), 2171-2180, 2023 | 20 | 2023 |
| High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors S Pazos, T Becker, MA Villena, W Zheng, Y Shen, Y Yuan, O Alharbi, ... Advanced Functional Materials 34 (15), 2213816, 2024 | 18 | 2024 |
| Memristors with Initial Low‐Resistive State for Efficient Neuromorphic Systems K Zhu, MR Mahmoodi, Z Fahimi, Y Xiao, T Wang, K Bukvišová, M Kolíbal, ... Advanced Intelligent Systems 4 (8), 2200001, 2022 | 17 | 2022 |
| Effect of the pressure exerted by probe station tips in the electrical characteristics of memristors Y Zuo, H Lin, J Guo, Y Yuan, H He, Y Li, Y Xiao, X Li, K Zhu, T Wang, ... Advanced Electronic Materials 6 (3), 1901226, 2020 | 17 | 2020 |
Mario LanzaIEEE Fellow | Associate Professor at National University of Singaporeبريد إلكتروني تم التحقق منه على kaust.edu.sa