متابعة
Enrique Miranda
Enrique Miranda
Universitat Autonoma de Barcelona
بريد إلكتروني تم التحقق منه على uab.cat
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Recommended methods to study resistive switching devices‏
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...‏
Advanced Electronic Materials 5 (1), 1800143, 2019‏
6522019
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride‏
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...‏
Advanced functional materials 27 (10), 1604811, 2017‏
3362017
Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices‏
C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...‏
IEEE transactions on electron devices 58 (9), 3124-3131, 2011‏
2972011
Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions‏
EA Miranda, C Walczyk, C Wenger, T Schroeder‏
IEEE Electron Device Letters 31 (6), 609-611, 2010‏
2192010
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries‏
M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich‏
Applied Physics Letters 101 (19), 2012‏
2092012
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?‏
A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ...‏
Advanced materials 30 (43), 1801187, 2018‏
2082018
Standards for the characterization of endurance in resistive switching devices‏
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...‏
ACS nano 15 (11), 17214-17231, 2021‏
1942021
Quantum-size effects in hafnium-oxide resistive switching‏
S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ...‏
Applied Physics Letters 102 (18), 2013‏
1862013
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors‏
D Jimenez, E Miranda, A Godoy‏
IEEE Transactions on Electron Devices 57 (10), 2405-2409, 2010‏
1702010
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM‏
S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ...‏
Scientific reports 3 (1), 2929, 2013‏
1692013
Electron transport through broken down ultra-thin SiO2 layers in MOS devices‏
E Miranda, J Sune‏
Microelectronics Reliability 44 (1), 1-23, 2004‏
1552004
A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown‏
S Long, X Lian, C Cagli, L Perniola, E Miranda, M Liu, J Suñé‏
IEEE electron device letters 34 (8), 999-1001, 2013‏
1392013
Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices‏
S Long, X Lian, T Ye, C Cagli, L Perniola, E Miranda, M Liu, J Sune‏
IEEE electron device letters 34 (5), 623-625, 2013‏
1312013
Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/films‏
E Miranda, J Suñé‏
2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001‏
1272001
Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics‏
E Miranda, J Suñé, R Rodríguez, M Nafria, X Aymerich, L Fonseca, ...‏
IEEE Transactions on Electron Devices 47 (1), 82-89, 2000‏
1272000
Hardware implementation of memristor-based artificial neural networks‏
F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ...‏
Nature communications 15 (1), 1974, 2024‏
1092024
Variability in resistive memories‏
JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ...‏
Advanced Intelligent Systems 5 (6), 2200338, 2023‏
1002023
Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?‏
J Suñé, G Mura, E Miranda‏
IEEE Electron Device Letters 21 (4), 167-169, 2000‏
972000
Post soft breakdown conduction in SiO/sub 2/gate oxides‏
J Sune, E Miranda‏
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000‏
962000
A function-fit model for the soft breakdown failure mode‏
E Miranda, J Sune, R Rodriguez, M Nafria, X Aymerich‏
IEEE Electron Device Letters 20 (6), 265-267, 1999‏
941999
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مقالات 1–20