متابعة
Heesun Bae
Heesun Bae
بريد إلكتروني تم التحقق منه على yonsei.ac.kr
عنوان
عدد مرات الاقتباسات
عدد مرات الاقتباسات
السنة
Photodetecting properties of ZnO-based thin-film transistors
HS Bae, MH Yoon, JH Kim, S Im
Applied Physics Letters 83 (25), 5313-5315, 2003
2432003
Ultraviolet detecting properties of ZnO-based thin film transistors
HS Bae, S Im
Thin Solid Films 469, 75-79, 2004
952004
Electroluminescence mechanism in layers containing radiative centers
HS Bae, TG Kim, CN Whang, S Im, JS Yun, JH Song
Journal of applied physics 91 (7), 4078-4081, 2002
782002
Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure
J Ahn, K Ko, J Kyhm, HS Ra, H Bae, S Hong, DY Kim, J Jang, TW Kim, ...
ACS nano 15 (11), 17917-17925, 2021
752021
ZnO-based thin-film transistors of optimal device performance
HS Bae, S Im
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
532004
Mobility enhancement in ZnO-based TFTs by H treatment
HS Bae, JH Kim, S Im
Electrochemical and solid-state letters 7 (11), G279, 2004
522004
2D tmd channel transistors with zno nanowire gate for extended nonvolatile memory applications
T Kim, D Kang, Y Lee, S Hong, HG Shin, H Bae, Y Yi, K Kim, S Im
Advanced Functional Materials 30 (40), 2004140, 2020
412020
Dynamic and static photoresponse of ultraviolet-detecting thin-film transistors based on transparent NiOx electrodes and an n‐ZnO channel
HS Bae, CM Choi, JH Kim, S Im
Journal of applied physics 97 (7), 2005
302005
Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors
H Cho, D Kang, Y Lee, H Bae, S Hong, Y Cho, K Kim, Y Yi, JH Park, S Im
Nano letters 21 (8), 3503-3510, 2021
272021
Ultrasensitive low power-consuming strain sensor based on complementary inverter composed of organic p-and n-channels
PJ Jeon, K Lee, EY Park, S Im, H Bae
Organic electronics 32, 208-212, 2016
252016
Low-voltage ultraviolet detectors using ZnO thin-film transistor isolated by B ion implantation
H Bae, S Im, J Song
Japanese journal of applied physics 47 (7R), 5362, 2008
162008
Novel hydrogen gas sensing by palladium electrode on dielectric capacitor coupled with an amorphous InGaZnO thin-film transistor
YT Lee, J Lee, H Hwang, H Jung, W Lee, H Bae, S Im
Sensors and Actuators B: Chemical 209, 490-495, 2015
152015
2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps
LJ Widiapradja, T Nam, Y Jeong, HJ Jin, Y Lee, K Kim, S Lee, H Kim, ...
Advanced Electronic Materials 7 (5), 2100074, 2021
142021
Electrical transport properties driven by unique bonding configuration in γ-GeSe
J Jang, J Kim, D Sung, JH Kim, JE Jung, S Lee, J Park, C Lee, H Bae, ...
Nano letters 23 (8), 3144-3151, 2023
132023
Van der Waals crystal radio with Pt/MoSe2 Schottky diode and h-BN capacitor for RF energy harvesting
LJ Widiapradja, S Hong, KT Kim, H Bae, S Im
Nano Energy 92, 106771, 2022
122022
n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation
CH Park, IS Jeong, HS Bae, TG Kim, S Im
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
112004
Self-Assembled TaOX/2H-TaS2 as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β-Ga2O3 Transistor
KT Kim, T Kim, Y Jeong, S Park, J Kim, H Cho, SK Cha, YS Kim, H Bae, ...
ACS nano 17 (4), 3666-3675, 2023
82023
Tungsten Dichalcogenide Nanoflake/InGaZnO Thin‐Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits
S Lee, HS Lee, S Yu, JH Park, H Bae, S Im
Advanced Electronic Materials 6 (5), 2000026, 2020
82020
Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy
K Choi, K Lee, S Yu, S Oh, HJ Choi, H Bae, S Im
ACS Applied Materials & Interfaces 10 (24), 20213-20218, 2018
82018
Transparent p‐NiO/n‐ZnO diodes used in circuit rectifiers
H Bae, KH Lee, KH Lee, JH Song, S Im
physica status solidi (RRL)–Rapid Research Letters 6 (12), 475-477, 2012
72012
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مقالات 1–20