| Mg alloying in SnTe facilitates valence band convergence and optimizes thermoelectric properties A Banik, US Shenoy, S Anand, UV Waghmare, K Biswas Chemistry of Materials 27 (2), 581-587, 2015 | 448 | 2015 |
| Phase boundary mapping to obtain n-type Mg3Sb2-based thermoelectrics S Ohno, K Imasato, S Anand, H Tamaki, SD Kang, P Gorai, HK Sato, ... Joule 2 (1), 141-154, 2018 | 350 | 2018 |
| High Thermoelectric Performance in SnTe–AgSbTe2 Alloys from Lattice Softening, Giant Phonon–Vacancy Scattering, and Valence Band Convergence G Tan, S Hao, RC Hanus, X Zhang, S Anand, TP Bailey, AJE Rettie, X Su, ... ACS Energy Letters 3 (3), 705-712, 2018 | 180 | 2018 |
| Enhanced Thermoelectric Performance in 18‐Electron Nb0.8CoSb Half‐Heusler Compound with Intrinsic Nb Vacancies K Xia, Y Liu, S Anand, GJ Snyder, J Xin, J Yu, X Zhao, T Zhu Advanced Functional Materials 28 (9), 1705845, 2018 | 159 | 2018 |
| Double half-heuslers S Anand, M Wood, Y Xia, C Wolverton, GJ Snyder Joule 3 (5), 1226-1238, 2019 | 147 | 2019 |
| A valence balanced rule for discovery of 18-electron half-Heuslers with defects S Anand, K Xia, VI Hegde, U Aydemir, V Kocevski, T Zhu, C Wolverton, ... Energy & Environmental Science 11 (6), 1480-1488, 2018 | 144 | 2018 |
| Na doping in PbTe: solubility, band convergence, phase boundary mapping, and thermoelectric properties P Jood, JP Male, S Anand, Y Matsushita, Y Takagiwa, MG Kanatzidis, ... Journal of the American Chemical Society 142 (36), 15464-15475, 2020 | 142 | 2020 |
| Heat capacity of Mg3Sb2, Mg3Bi2, and their alloys at high temperature MT Agne, K Imasato, S Anand, K Lee, SK Bux, A Zevalkink, AJE Rettie, ... Materials Today Physics 6, 83-88, 2018 | 129 | 2018 |
| Impact of Ni content on the thermoelectric properties of half-Heusler TiNiSn Y Tang, X Li, LHJ Martin, EC Reyes, T Ivas, C Leinenbach, S Anand, ... Energy & Environmental Science 11 (2), 311-320, 2018 | 121 | 2018 |
| Using 18-Electron Rule To Understand the Nominal 19-Electron Half-Heusler NbCoSb with Nb Vacancies W Zeier, S Anand, L Huang, R He, H Zhang, Z Ren, C Wolverton, ... Chemistry of Materials 29, 1210-1217, 2017 | 119 | 2017 |
| Short-range order in defective half-Heusler thermoelectric crystals K Xia, P Nan, S Tan, Y Wang, B Ge, W Zhang, S Anand, X Zhao, ... Energy & Environmental Science 12 (5), 1568-1574, 2019 | 109 | 2019 |
| High Thermoelectric Performance of New Rhombohedral Phase of GeSe stabilized through Alloying with AgSbSe2 Z Huang, SA Miller, B Ge, M Yan, S Anand, T Wu, P Nan, Y Zhu, ... Angewandte Chemie International Edition 56 (45), 14113-14118, 2017 | 97 | 2017 |
| How to analyse a density of states MY Toriyama, AM Ganose, M Dylla, S Anand, J Park, MK Brod, JM Munro, ... Materials today electronics 1, 100002, 2022 | 91 | 2022 |
| Thermoelectric Properties of Materials with Nontrivial Electronic Topology K Pal, S Anand, U Waghmare, V Journal of Materials Chemistry C, 2015 | 86 | 2015 |
| Understanding the thermally activated charge transport in NaPbmSbQm+2 (Q= S, Se, Te) thermoelectrics: weak dielectric screening leads to grain boundary dominated charge carrier … TJ Slade, JA Grovogui, JJ Kuo, S Anand, TP Bailey, M Wood, C Uher, ... Energy & Environmental Science 13 (5), 1509-1518, 2020 | 74 | 2020 |
| Temperature dependent n‐type self doping in nominally 19‐electron half‐Heusler thermoelectric materials S Anand, K Xia, T Zhu, C Wolverton, GJ Snyder Advanced Energy Materials 8 (30), 1801409, 2018 | 71 | 2018 |
| Two-dimensional Rectangular and Honeycomb Lattices of NbN: Emergence of Piezoelectric and Photocatalytic Properties at Nano-scale S Anand, K Thekeppat, UV Waghmare Nano Letters, 2015 | 61 | 2015 |
| Charge-carrier-mediated lattice softening contributes to high zT in thermoelectric semiconductors TJ Slade†, S Anand† (†Co-first Author), M Wood, JP Male, K Imasato, ... Joule, 2021 | 58 | 2021 |
| The importance of phase equilibrium for doping efficiency: iodine doped PbTe J Male, MT Agne, A Goyal, S Anand, IT Witting, V Stevanović, GJ Snyder Materials Horizons 6 (7), 1444-1453, 2019 | 58 | 2019 |
| Thermoelectric transport of semiconductor full-Heusler VFe2Al S Anand, R Gurunathan, T Soldi, L Borgsmiller, R Orenstein, GJ Snyder Journal of Materials Chemistry C 8 (30), 10174-10184, 2020 | 50 | 2020 |
G. Jeffrey SnyderNorthwestern UniversityПотвърден имейл адрес: northwestern.edu