Equivalent-accuracy accelerated neural-network training using analogue memory S Ambrogio, P Narayanan, H Tsai, RM Shelby, I Boybat, C Di Nolfo, ...
Nature 558 (7708), 60-67, 2018
1154 2018 Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
658 2019 Emerging neuromorphic devices D Ielmini, S Ambrogio
Nanotechnology 31 (9), 092001, 2019
312 2019 Statistical Fluctuations in HfOx S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
IEEE Transactions on electron devices 61 (8), 2912-2919, 2014
283 2014 Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ...
Frontiers in neuroscience 10, 56, 2016
256 2016 Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM S Ambrogio, S Balatti, V Milo, R Carboni, ZQ Wang, A Calderoni, ...
IEEE Transactions on Electron Devices 63 (4), 1508-1515, 2016
256 2016 Recent progress in analog memory-based accelerators for deep learning H Tsai, S Ambrogio, P Narayanan, RM Shelby, GW Burr
Journal of Physics D: Applied Physics 51 (28), 283001, 2018
230 2018 Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity G Pedretti, V Milo, S Ambrogio, R Carboni, S Bianchi, A Calderoni, ...
Scientific reports 7 (1), 5288, 2017
183 2017 Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches S Ambrogio, S Balatti, DC Gilmer, D Ielmini
IEEE Transactions on Electron Devices 61 (7), 2378-2386, 2014
163 2014 Statistical Fluctuations in HfOx S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
IEEE Transactions on Electron Devices 61 (8), 2920-2927, 2014
150 2014 True random number generation by variability of resistive switching in oxide-based devices S Balatti, S Ambrogio, Z Wang, D Ielmini
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …, 2015
148 2015 Physical unbiased generation of random numbers with coupled resistive switching devices S Balatti, S Ambrogio, R Carboni, V Milo, Z Wang, A Calderoni, ...
IEEE Transactions on Electron Devices 63 (5), 2029-2035, 2016
134 2016 Ultrafast valley relaxation dynamics in monolayer S Dal Conte, F Bottegoni, EAA Pogna, D De Fazio, S Ambrogio, I Bargigia, ...
Physical Review B 92 (23), 235425, 2015
134 2015 Spike-timing dependent plasticity in a transistor-selected resistive switching memory S Ambrogio, S Balatti, F Nardi, S Facchinetti, D Ielmini
Nanotechnology 24 (38), 384012, 2013
134 2013 Impact of the mechanical stress on switching characteristics of electrochemical resistive memory S Ambrogio, S Balatti, S Choi, D Ielmini
Advanced Materials 26 (23), 3885-3892, 2014
122 2014 Voltage-Controlled Cycling Endurance of HfOx S Balatti, S Ambrogio, Z Wang, S Sills, A Calderoni, N Ramaswamy, ...
IEEE Transactions on Electron Devices 62 (10), 3365-3372, 2015
120 2015 An analog-AI chip for energy-efficient speech recognition and transcription S Ambrogio, P Narayanan, A Okazaki, A Fasoli, C Mackin, K Hosokawa, ...
Nature 620 (7975), 768-775, 2023
114 2023 A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems Z Wang, S Ambrogio, S Balatti, D Ielmini
Frontiers in neuroscience 8, 438, 2015
109 2015 Normally-off logic based on resistive switches—Part I: Logic gates S Balatti, S Ambrogio, D Ielmini
IEEE transactions on Electron Devices 62 (6), 1831-1838, 2015
94 2015 Understanding switching variability and random telegraph noise in resistive RAM S Ambrogio, S Balatti, A Cubeta, A Calderoni, N Ramaswamy, D Ielmini
Electron Devices Meeting (IEDM), 2013 IEEE International, 31.5. 1-31.5. 4, 2013
90 2013 
Daniele IelminiProfessor of ElectronicsПотвърден имейл адрес: elet.polimi.it
