| Impact of nitridation on the reliability of 4H-SiC (112̄0) MOS devices T Nakanuma, T Kobayashi, T Hosoi, M Sometani, M Okamoto, A Yoshigoe, ... Applied Physics Express 15 (4), 041002, 2022 | 10 | 2022 |
| Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC (1120) interfaces T Nakanuma, Y Iwakata, A Watanabe, T Hosoi, T Kobayashi, M Sometani, ... Japanese journal of applied physics 61 (SC), SC1065, 2022 | 10 | 2022 |
| Characterization of nitrided SiC (1 1‾ 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy T Kobayashi, A Suzuki, T Nakanuma, M Sometani, M Okamoto, ... Materials Science in Semiconductor Processing 175, 108251, 2024 | 6 | 2024 |
| Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing T Nakanuma, K Tahara, K Kutsuki, T Shimura, H Watanabe, T Kobayashi Applied Physics Letters 123 (10), 2023 | 5 | 2023 |
| Investigation of reliability of NO nitrided SiC (1100) MOS devices T Nakanuma, A Suzuki, Y Iwakata, T Kobayashi, M Sometani, M Okamoto, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 3B. 2-1-3B. 2-5, 2022 | 3 | 2022 |
| Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures K Onishi, T Nakanuma, K Tahara, K Kutsuki, T Shimura, H Watanabe, ... Applied Physics Express 17 (5), 051004, 2024 | 1 | 2024 |
| Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes H Watanabe, T Kobayashi, H Iwamoto, T Nakanuma, H Hirai, M Sometani Japanese Journal of Applied Physics 64 (1), 010801, 2025 | | 2025 |
Takuma KobayashiAssociate Professor, Osaka UniversityПотвърден имейл адрес: prec.eng.osaka-u.ac.jp