High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1954, 2019
280 2019 Spin-strain interaction in nitrogen-vacancy centers in diamond P Udvarhelyi, VO Shkolnikov, A Gali, G Burkard, A Pályi
Physical Review B 98 (7), 075201, 2018
138 2018 Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide N Morioka, C Babin, R Nagy, I Gediz, E Hesselmeier, D Liu, M Joliffe, ...
Nature communications 11 (1), 2516, 2020
94 2020 Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in P Udvarhelyi, G Thiering, N Morioka, C Babin, F Kaiser, D Lukin, ...
Physical Review Applied 13 (5), 054017, 2020
82 2020 Electrically driven optical interferometry with spins in silicon carbide KC Miao, A Bourassa, CP Anderson, SJ Whiteley, AL Crook, SL Bayliss, ...
Science Advances 5 (11), eaay0527, 2019
79 2019 Detection of single W-centers in silicon Y Baron, A Durand, P Udvarhelyi, T Herzig, M Khoury, S Pezzagna, ...
ACS Photonics 9 (7), 2337-2345, 2022
77 2022 Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface P Udvarhelyi, R Nagy, F Kaiser, SY Lee, J Wrachtrup, A Gali
Physical Review Applied 11 (4), 044022, 2019
69 2019 Identification of a telecom wavelength single photon emitter in silicon P Udvarhelyi, B Somogyi, G Thiering, A Gali
Physical review letters 127 (19), 196402, 2021
57 2021 Giant shift upon strain on the fluorescence spectrum of VN NB color centers in h -BN S Li, JP Chou, A Hu, MB Plenio, P Udvarhelyi, G Thiering, M Abdi, A Gali
npj Quantum Information 6 (1), 85, 2020
42 2020 Ab Initio Spin-Strain Coupling Parameters of Divacancy Qubits in Silicon CarbideP Udvarhelyi, A Gali
Physical Review Applied 10 (5), 054010, 2018
40 2018 Carbon defect qubit in two-dimensional WS2 S Li, G Thiering, P Udvarhelyi, V Ivády, A Gali
Nature communications 13 (1), 1210, 2022
39 2022 Ultraviolet quantum emitters in hexagonal boron nitride from carbon clusters S Li, A Pershin, G Thiering, P Udvarhelyi, A Gali
The Journal of Physical Chemistry Letters 13 (14), 3150-3157, 2022
34 2022 Optically active spin defects in few-layer thick hexagonal boron nitride A Durand, T Clua-Provost, F Fabre, P Kumar, J Li, JH Edgar, P Udvarhelyi, ...
Physical Review Letters 131 (11), 116902, 2023
22 2023 Controlled Surface Modification to Revive Shallow NV– Centers JN Neethirajan, T Hache, D Paone, D Pinto, A Denisenko, R Stöhr, ...
Nano Letters 23 (7), 2563-2569, 2023
21 2023 An L-band emitter with quantum memory in silicon P Udvarhelyi, A Pershin, P Deák, A Gali
npj Computational Materials 8 (1), 262, 2022
20 2022 A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields P Udvarhelyi, T Clua-Provost, A Durand, J Li, JH Edgar, B Gil, ...
npj Computational Materials 9 (1), 150, 2023
15 2023 Ab initio theory of the P Udvarhelyi, G Thiering, E Londero, A Gali
Physical Review B 96 (15), 155211, 2017
14 2017 The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium P Deák, P Udvarhelyi, G Thiering, A Gali
nature communications 14 (1), 361, 2023
11 2023 Strain engineering for transition-metal defects in SiC B Tissot, P Udvarhelyi, A Gali, G Burkard
Physical Review B 109 (5), 054111, 2024
9 2024 Carbon cluster emitters in silicon carbide P Li, P Udvarhelyi, S Li, B Huang, A Gali
Physical Review B 108 (8), 085201, 2023
8 2023 
Gali ÁdámWigner Research Centre for Physics, Hungarian Academy of SciencesПотвърден имейл адрес: wigner.mta.hu