Broken-Gap Type-III Band Alignment in WTe2 /HfS2 van der Waals Heterostructure C Lei, Y Ma, X Xu, T Zhang, B Huang, Y Dai
The Journal of Physical Chemistry C 123 (37), 23089-23095, 2019
97 2019 Two-Dimensional Penta-BN2 with High Specific Capacity for Li-Ion Batteries T Zhang, Y Ma, B Huang, Y Dai
ACS applied materials & interfaces 11 (6), 6104-6110, 2019
78 2019 Nonmetal-Atom-Doping-Induced Valley Polarization in Single-Layer Tl2 O X Xu, Y Ma, T Zhang, C Lei, B Huang, Y Dai
The Journal of Physical Chemistry Letters 10 (16), 4535-4541, 2019
70 2019 Prediction of two-dimensional antiferromagnetic ferroelasticity in an AgF 2 monolayer X Xu, Y Ma, T Zhang, C Lei, B Huang, Y Dai
Nanoscale Horizons 5 (10), 1386-1393, 2020
65 2020 Prediction of two-dimensional PC 6 as a promising anode material for potassium-ion batteries K Dou, Y Ma, T Zhang, B Huang, Y Dai
Physical Chemistry Chemical Physics 21 (47), 26212-26218, 2019
58 2019 Ferroelastic-ferroelectric multiferroics in a bilayer lattice T Zhang, Y Liang, X Xu, B Huang, Y Dai, Y Ma
Physical Review B 103 (16), 165420, 2021
52 2021 Valley-Contrasting Physics in Single-Layer CrSi2 N4 and CrSi2 P4 Y Liu, T Zhang, K Dou, W Du, R Peng, Y Dai, B Huang, Y Ma
The Journal of Physical Chemistry Letters 12 (34), 8341-8346, 2021
51 2021 Direction-control of anisotropic electronic behaviors via ferroelasticity in two-dimensional α-MPI (M= Zr, Hf) T Zhang, Y Ma, L Yu, B Huang, Y Dai
Materials Horizons 6 (9), 1930-1937, 2019
50 2019 Two-Dimensional Ferroelastic Semiconductors in Nb2 SiTe4 and Nb2 GeTe4 with Promising Electronic Properties T Zhang, Y Ma, X Xu, C Lei, B Huang, Y Dai
The Journal of Physical Chemistry Letters 11 (2), 497-503, 2019
46 2019 Layer-polarized anomalous Hall effects in valleytronic van der Waals bilayers T Zhang, X Xu, B Huang, Y Dai, L Kou, Y Ma
Materials Horizons 10 (2), 483-490, 2023
45 2023 Construction of diluted magnetic semiconductor to endow nonmagnetic semiconductor with spin-regulated photocatalytic performance YS Wenqiang Gao, Xiaolei Zhao, Ting Zhang, Xiaowen Yu, Yandong Ma, Egon ...
Nano Energy 110, 108381, 2023
41 2023 2D spontaneous valley polarization from inversion symmetric single-layer lattices T Zhang, X Xu, B Huang, Y Dai, Y Ma
npj Computational Materials 8 (1), 64, 2022
41 2022 Valley polarization in monolayer CrX2 (X= S, Se) with magnetically doping and proximity coupling C Lei, Y Ma, T Zhang, X Xu, B Huang, Y Dai
New Journal of Physics 22 (3), 033002, 2020
41 2020 Intrinsic layer-polarized anomalous Hall effect in bilayer R Peng, T Zhang, Z He, Q Wu, Y Dai, B Huang, Y Ma
Physical Review B 107 (8), 085411, 2023
40 2023 Nonvolatile Controlling Valleytronics by Ferroelectricity in 2H-VSe2 /Sc2 CO2 van der Waals Heterostructure C Lei, X Xu, T Zhang, B Huang, Y Dai, Y Ma
The Journal of Physical Chemistry C 125 (4), 2802-2809, 2021
33 2021 Two-dimensional valleytronics in single-layer t-ZrNY (Y= Cl, Br) predicted from first principles T Zhang, Y Ma, X Xu, C Lei, B Huang, Y Dai
The Journal of Physical Chemistry C 124 (37), 20598-20604, 2020
23 2020 In situ monitoring of the spatial distribution of oxygen vacancies and enhanced photocatalytic performance at the single-particle level Y Zhang, Y Liu, T Zhang, X Gong, Z Wang, Y Liu, P Wang, H Cheng, Y Dai, ...
Nano Letters 23 (4), 1244-1251, 2023
18 2023 Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2 S6 J Zhao, T Zhang, R Peng, Y Dai, B Huang, Y Ma
The Journal of Physical Chemistry Letters 13 (37), 8749-8754, 2022
18 2022 Layer-polarized anomalous Hall effects from inversion-symmetric single-layer lattices T Zhang, X Xu, J Guo, Y Dai, Y Ma
Nano Letters 24 (3), 1009-1014, 2024
17 2024 Strain‐valley coupling in 2D antiferromagnetic lattice Y Liu, Y Feng, T Zhang, Z He, Y Dai, B Huang, Y Ma
Advanced Functional Materials 33 (51), 2305130, 2023
17 2023 
Yandong Ma (马衍东)Shandong UniversityПотвърден имейл адрес: sdu.edu.cn