| Recent developments in biosensors for healthcare and biomedical applications: A review P Mohankumar, J Ajayan, T Mohanraj, R Yasodharan Measurement 167, 108293, 2021 | 233 | 2021 |
| A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies J Ajayan, D Nirmal, P Mohankumar, M Saravanan, M Jagadesh, ... Superlattices and Microstructures 143, 106549, 2020 | 191 | 2020 |
| A review of InP/InAlAs/InGaAs based transistors for high frequency applications J Ajayan, D Nirmal Superlattices and Microstructures 86, 1-19, 2015 | 167 | 2015 |
| A review of micromachined sensors for automotive applications P Mohankumar, J Ajayan, R Yasodharan, P Devendran, R Sambasivam Measurement 140, 305-322, 2019 | 131 | 2019 |
| Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications JC Pravin, D Nirmal, P Prajoon, J Ajayan Physica E: Low-dimensional systems and nanostructures 83, 95-100, 2016 | 110 | 2016 |
| Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review J Ajayan, D Nirmal, P Mohankumar, B Mounika, S Bhattacharya, S Tayal, ... Materials Science in Semiconductor Processing 151, 106982, 2022 | 91 | 2022 |
| Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ... Microelectronics Journal 114, 105141, 2021 | 91 | 2021 |
| Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan AEU-International Journal of Electronics and Communications 99, 325-330, 2019 | 88 | 2019 |
| Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications J Ajayan, D Nirmal, P Prajoon, JC Pravin AEU-International Journal of Electronics and Communications 79, 151-157, 2017 | 85 | 2017 |
| InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ... AEU-International Journal of Electronics and Communications 94, 199-214, 2018 | 75 | 2018 |
| Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review B Mounika, J Ajayan, S Bhattacharya, D Nirmal Micro and Nanostructures 168, 207317, 2022 | 68 | 2022 |
| Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon Superlattices and Microstructures 113, 810-820, 2018 | 57 | 2018 |
| 20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications J Ajayan, D Nirmal Superlattices and Microstructures 100, 526-534, 2016 | 49 | 2016 |
| 20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications J Ajayan, D Nirmal International Journal of Electronics 104 (3), 504-512, 2017 | 47 | 2017 |
| Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ... AEU-International Journal of Electronics and Communications 108, 189-194, 2019 | 46 | 2019 |
| Handbook for III-V high electron mobility transistor technologies D Nirmal, J Ajayan CRC Press, 2019 | 46 | 2019 |
| GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review J Ajayan, D Nirmal, P Mohankumar, D Kuriyan, ASA Fletcher, ... Microelectronics Journal 92, 104604, 2019 | 45 | 2019 |
| A comprehensive review on thin film amorphous silicon solar cells S Sreejith, J Ajayan, S Kollem, B Sivasankari Silicon 14 (14), 8277-8293, 2022 | 43 | 2022 |
| A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications J Ajayan, D Nirmal, R Mathew, D Kurian, P Mohankumar, L Arivazhagan, ... Materials Science in Semiconductor Processing 128, 105753, 2021 | 41 | 2021 |
| Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer AS Augustine Fletcher, D Nirmal, L Arivazhagan, J Ajayan, A Varghese International Journal of RF and Microwave Computer‐Aided Engineering 30 (2 …, 2020 | 41 | 2020 |
Dr.D.NirmalAssociate Dean Engineering and Technology, Karunya UniversityПотвърден имейл адрес: karunya.edu