rahim faez

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2020
Позовавания	1224	539
h-индекс	18	12
i10-индекс	33	16

160

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Публичен достъп

Преглед на всички

4 статии

1 статия

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Mohammad Kazem Moravvej-FarshiTarbiat Modares UniversityПотвърден имейл адрес: modares.ac.ir
Mahdi PourfathTU WIENПотвърден имейл адрес: iue.tuwien.ac.at
Saeed Haji-NasiriAssociate Professor of Electrical Engineering, Qazvin Islamic Azad University (QIAU)Потвърден имейл адрес: qiau.ac.ir
Ashkan HorriDepartment of Electrical Engineering, Islamic Azad University, Arak BranchПотвърден имейл адрес: iau-arak.ac.ir
Saeid MarjaniFerdowsi University of MashhadПотвърден имейл адрес: mail.um.ac.ir
Hossein KaramitaheriUniversity of KashanПотвърден имейл адрес: kashanu.ac.ir
Atefeh NazaryResearcherПотвърден имейл адрес: qiau.ac.ir
Morteza FathipourUniversity of TehranПотвърден имейл адрес: ut.ac.ir
Ali ShahhoseiniAssociate professor of Electrical Engineering, Qazvin Islamic Azad UniversityПотвърден имейл адрес: qiau.ac.ir
Neophytos NeophytouSchool of Engineering, University of WarwickПотвърден имейл адрес: warwick.ac.uk
Zahra HemmatApple IncПотвърден имейл адрес: apple.com
S Reza HosseiniAssistant Professor, Khoy Branch, Islamic Azad UniversityПотвърден имейл адрес: iaukhoy.ac.ir
Hossein Rabiee Golgir, Ph.D.Intel CorporationПотвърден имейл адрес: ucdavis.edu
Reza SarvariAssociate Professor, Department of Electrical Engineering, Sharif University of TechnologyПотвърден имейл адрес: sharif.edu
Danial MajidiLPMMC, Université Grenoble AlpesПотвърден имейл адрес: lpmmc.cnrs.fr
Ali MohamadianSharif University of TechnologyПотвърден имейл адрес: ee.sharif.edu
Kang L. WangElectrical Engineering DepartmentПотвърден имейл адрес: ee.ucla.edu
Jianlin LiuProfessor of Electrical and Computer Engineering, University of California, RiversideПотвърден имейл адрес: ece.ucr.edu
Mahdi MoradinasabDarmstadt University of TechnologyПотвърден имейл адрес: iue.tuwien.ac.at

Следене

rahim faez

sharif university of technology

Потвърден имейл адрес: sharif.edu


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina Journal of Applied Physics 111 (5), 2012	118	2012
Stability analysis in graphene nanoribbon interconnects SH Nasiri, MK Moravvej-Farshi, R Faez IEEE Electron Device Letters 31 (12), 1458-1460, 2010	105	2010
Geometrical effects on the thermoelectric properties of ballistic graphene antidot lattices H Karamitaheri, M Pourfath, R Faez, H Kosina Journal of Applied Physics 110 (5), 2011	87	2011
Compact formulae for number of conduction channels in various types of graphene nanoribbons at various temperatures SH Nasiri, R Faez, MK Moravvej-Farshi Modern Physics Letters B 26 (01), 1150004, 2012	48	2012
A novel graphene nanoribbon field effect transistor with two different gate insulators MA Eshkalak, R Faez, S Haji-Nasiri Physica E: Low-dimensional Systems and Nanostructures 66, 133-139, 2015	42	2015
Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect A Nazari, R Faez, H Shamloo Superlattices and Microstructures 97, 28-45, 2016	36	2016
Improving ION/IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects A Nazari, R Faez, H Shamloo Superlattices and Microstructures 86, 483-492, 2015	36	2015
Atomistic study of the lattice thermal conductivity of rough graphene nanoribbons H Karamitaheri, M Pourfath, R Faez, H Kosina IEEE Transactions on Electron Devices 60 (7), 2142-2147, 2013	35	2013
Stability analysis in multiwall carbon nanotube bundle interconnects S Haji-Nasiri, R Faez, MK Moravvej-Farshi Microelectronics Reliability 52 (12), 3026-3034, 2012	25	2012
Time domain analysis of graphene nanoribbon interconnects based on transmission line model NS HAJI, FMK MORAVVEJ, R Faez Iranian Journal of Electrical and Electronic Engineering 8 (1), 37-44, 2012	24	2012
A 3D analytical modeling of tri-gate tunneling field-effect transistors S Marjani, SE Hosseini, R Faez Journal of Computational Electronics 15, 820-830, 2016	22	2016
A new SPICE macro-model for simulation of single electron circuits M Karimian, M Dousti, M Pouyan, R Faez 2009 International Conference on Microelectronics-ICM, 228-231, 2009	22	2009
Using of thermoelectric devices in photovoltaic cells in order to increase efficiency S Ahadi, HR Hoseini, R Faez Indian Journal of Scientific Research 2 (1), 20-26, 2014	21	2014
Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET) R Hosseini, M Fathipour, R Faez International Journal of the Physical Sciences 7 (28), 5054-5061, 2012	21	2012
Modeling of a Vertical Tunneling Transistor Based on Graphene–MoS₂Heterostructure A Horri, R Faez, M Pourfath, G Darvish IEEE Transactions on Electron Devices 64 (8), 3459-3465, 2017	20	2017
Implementation of open boundary problems in photo-conductive antennas by using convolutional perfectly matched layers E Moreno, Z Hemmat, JB Roldán, MF Pantoja, AR Bretones, SG García, ... IEEE Transactions on Antennas and Propagation 64 (11), 4919-4922, 2016	20	2016
Calculation of confined phonon spectrum in narrow silicon nanowires using the valence force field method H Karamitaheri, N Neophytou, MK Taheri, R Faez, H Kosina Journal of electronic materials 42, 2091-2097, 2013	20	2013
Crosstalk stability analysis in multilayer graphene nanoribbon interconnects L Akbari, R Faez Circuits, Systems, and Signal Processing 32, 2653-2666, 2013	19	2013
A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio S Marjani, SE Hosseini, R Faez AIP Advances 6 (9), 2016	18	2016
Design and simulation of a high power single mode 1550nm InGaAsP VCSELs R Faez, A Marjani, S Marjani IEICE Electronics Express 8 (13), 1096-1101, 2011	18	2011

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