Следене
Xiaoqian Zhang
Xiaoqian Zhang
Потвърден имейл адрес: seu.edu.cn - Начална страница
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Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films
X Zhang, Q Lu, W Liu, W Niu, J Sun, J Cook, M Vaninger, PF Miceli, ...
Nature communications 12 (1), 2492, 2021
3322021
Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3
X Zhang, SC Ambhire, Q Lu, W Niu, J Cook, JS Jiang, D Hong, L Alahmed, ...
ACS nano 15 (10), 15710-15719, 2021
592021
Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System
W Niu, W Liu, M Gu, Y Chen, X Zhang, M Zhang, Y Chen, J Wang, J Du, ...
Advanced Electronic Materials 4 (6), 1800055, 2018
462018
Two-dimensional ferromagnetic superlattices
S Liu, K Yang, W Liu, E Zhang, Z Li, X Zhang, Z Liao, W Zhang, J Sun, ...
National Science Review 7 (4), 745-754, 2020
412020
Transport evidence of 3D topological nodal-line semimetal phase in ZrSiS
J Zhang, M Gao, J Zhang, X Wang, X Zhang, M Zhang, W Niu, R Zhang, ...
Frontiers of Physics 13, 1-9, 2018
332018
Ferromagnetism in two-dimensional CrTe2 epitaxial films down to a few atomic layers
Y Sun, P Yan, J Ning, X Zhang, Y Zhao, Q Gao, M Kanagaraj, K Zhang, ...
AIP Advances 11 (3), 2021
312021
Direct observation of high spin polarization in Co2FeAl thin films
X Zhang, H Xu, B Lai, Q Lu, X Lu, Y Chen, W Niu, C Gu, W Liu, X Wang, ...
Scientific Reports 8 (1), 8074, 2018
302018
Self‐Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet
X Zhang, W Liu, W Niu, Q Lu, W Wang, A Sarikhani, X Wu, C Zhu, J Sun, ...
Advanced Functional Materials 32 (32), 2202977, 2022
272022
Evidence for Layered Quantized Transport in Dirac Semimetal ZrTe5
W Wang, X Zhang, H Xu, Y Zhao, W Zou, L He, Y Xu
Scientific Reports 8 (1), 5125, 2018
252018
Realization of unpinned two-dimensional dirac states in antimony atomic layers
Q Lu, J Cook, X Zhang, KY Chen, M Snyder, DT Nguyen, PVS Reddy, ...
Nature communications 13 (1), 4603, 2022
242022
Large Linear Magnetoresistance of High‐Mobility 2D Electron System at Nonisostructural γ‐Al2O3/SrTiO3 Heterointerfaces
W Niu, Y Gan, Z Wu, X Zhang, Y Wang, Y Chen, L Wang, Y Xu, L He, Y Pu, ...
Advanced Materials Interfaces 8 (21), 2101235, 2021
242021
Observation of Spin Splitting in Room‐Temperature Metallic Antiferromagnet CrSb
M Zeng, MY Zhu, YP Zhu, XR Liu, XM Ma, YJ Hao, P Liu, G Qu, Y Yang, ...
Advanced Science 11 (43), 2406529, 2024
232024
Antisymmetric magnetoresistance in nanodevices of inhomogeneous thickness
W Niu, Z Cao, Y Wang, Z Wu, X Zhang, W Han, L Wei, L Wang, Y Xu, ...
Physical Review B 104 (12), 125429, 2021
232021
Tuning 2D magnetism in Fe3+XGeTe2 films by element doping
S Liu, Z Li, K Yang, E Zhang, A Narayan, X Zhang, J Zhu, W Liu, Z Liao, ...
National Science Review 9 (6), nwab117, 2022
192022
Probing the atomic-scale ferromagnetism in van der Waals magnet CrSiTe3
W Niu, X Zhang, W Wang, J Sun, Y Xu, L He, W Liu, Y Pu
Applied Physics Letters 119 (17), 2021
192021
Electrolyte gate controlled metal-insulator transitions of the CaZrO3/SrTiO3 heterointerface
W Niu, Y Chen, Y Gan, Y Zhang, X Zhang, X Yuan, Z Cao, W Liu, Y Xu, ...
Applied Physics Letters 115 (6), 2019
172019
Spin-ARPES EUV beamline for ultrafast materials research and development
Z Nie, ICE Turcu, Y Li, X Zhang, L He, J Tu, Z Ni, H Xu, Y Chen, X Ruan, ...
Applied Sciences 9 (3), 370, 2019
162019
Dirac fermion cloning, moiré flat bands, and magic lattice constants in epitaxial monolayer graphene
Q Lu, C Le, X Zhang, J Cook, X He, M Zarenia, M Vaninger, PF Miceli, ...
Advanced Materials 34 (26), 2200625, 2022
142022
Fully Optical Modulation of the Two-Dimensional Electron Gas at the γ-Al2O3/SrTiO3 Interface
W Niu, YW Fang, R Liu, Z Wu, Y Chen, Y Gan, X Zhang, C Zhu, L Wang, ...
The Journal of Physical Chemistry Letters 13 (13), 2976-2985, 2022
142022
Electronic and magnetic properties of perovskite selenite and tellurite compounds: , and
ARM Iasir, T Lombardi, Q Lu, AM Mofrad, M Vaninger, X Zhang, DJ Singh
Physical Review B 101 (4), 045107, 2020
132020
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