Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017
123 2017 Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on nuclear science 60 (6), 4080-4086, 2013
123 2013 Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
116 2015 Process dependence of proton-induced degradation in GaN HEMTs T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ...
IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010
114 2010 Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ...
IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009
110 2009 Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011
99 2011 Laser-and heavy ion-induced charge collection in bulk FinFETs F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011
91 2011 Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014
84 2014 Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ...
IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016
83 2016 Geometry dependence of total-dose effects in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ...
IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014
80 2014 Impact of proton irradiation on deep level states in n-GaN Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 103 (4), 2013
78 2013 Total-ionizing-dose radiation effects in AlGaN/GaN HEMTs and MOS-HEMTs X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4074-4079, 2013
76 2013 Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ...
IEEE transactions on nuclear science 58 (6), 2961-2967, 2011
74 2011 Radiation effects in algan/gan hemts DM Fleetwood, EX Zhang, RD Schrimpf, ST Pantelides
IEEE Transactions on Nuclear Science 69 (5), 1105-1119, 2022
71 2022 Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applications NE Ives, J Chen, AF Witulski, RD Schrimpf, DM Fleetwood, RW Bruce, ...
IEEE Transactions on Nuclear Science 62 (6), 2417-2422, 2015
70 2015 Charge Trapping in Al2 O3 /2 O3 -Based MOS Capacitors MA Bhuiyan, H Zhou, R Jiang, EX Zhang, DM Fleetwood, DY Peide, ...
IEEE Electron Device Letters 39 (7), 1022-1025, 2018
69 2018 The Impact of X-Ray and Proton Irradiation on JS Bi, ZS Han, EX Zhang, MW McCurdy, RA Reed, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4540-4546, 2013
69 2013 Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies H Hughes, P McMarr, M Alles, E Zhang, C Arutt, B Doris, D Liu, ...
2015 IEEE Radiation Effects Data Workshop (REDW), 1-6, 2015
67 2015 Effectiveness of SEL hardening strategies and the latchup domino effect NA Dodds, NC Hooten, RA Reed, RD Schrimpf, JH Warner, NJH Roche, ...
IEEE Transactions on Nuclear Science 59 (6), 2642-2650, 2012
67 2012 Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ...
Applied Physics Letters 99 (20), 2011
67 2011 
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityПотвърден имейл адрес: vanderbilt.edu