Potential of transition metal dichalcogenide transistors for flexible electronics applications A Piacentini, A Daus, Z Wang, MC Lemme, D Neumaier
Advanced Electronic Materials 9 (8), 2300181, 2023
28 2023 Stable Al2 O3 Encapsulation of MoS2 ‐FETs Enabled by CVD Grown h‐BN A Piacentini, D Marian, DS Schneider, E González Marín, Z Wang, M Otto, ...
Advanced Electronic Materials 8 (9), 2200123, 2022
20 2022 Button shear testing for adhesion measurements of 2D materials J Schätz, N Nayi, J Weber, C Metzke, S Lukas, J Walter, T Schaffus, ...
Nature Communications 15 (1), 2430, 2024
7 2024 CVD graphene contacts for lateral heterostructure MoS2 field effect transistors DS Schneider, L Lucchesi, E Reato, Z Wang, A Piacentini, J Bolten, ...
npj 2D Materials and Applications 8 (1), 35, 2024
4 2024 Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2 and n‐type MoS2 A Piacentini, DK Polyushkin, B Uzlu, A Grundmann, M Heuken, H Kalisch, ...
physica status solidi (a) 221 (10), 2300913, 2024
4 2024 MoS2 /graphene Lateral Heterostructure Field Effect Transistors DS Schneider, E Reato, L Lucchesi, Z Wang, A Piacetini, J Bolten, ...
2021 Device Research Conference (DRC), 1-2, 2021
2 2021 Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2 A Piacentini, D Polyushkin, B Uzlu, A Grundmann, M Heuken, H Kalisch, ...
2023 Device Research Conference (DRC), 1-2, 2023
1 2023 Comparative performance of MoS₂ transistors: Statistical study and one-transistor-one-resistive memory integration F Khorramshahi, H Bohuslavskyi, A Murros, A Piacentini, M Heuken, ...
Materials Science in Semiconductor Processing 190, 109336, 2025
2025 Contact Resistance Optimization in MoS Y Fa, A Piacentini, B Macco, H Kalisch, M Heuken, A Vescan, Z Wang, ...
arXiv preprint arXiv:2412.08663, 2024
2024 Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers A Ghiami, H Fiadziushkin, T Sun, S Tang, Y Wang, E Mayer, ...
arXiv preprint arXiv:2412.02407, 2024
2024 Flexible p-Type WSe2 Transistors with Alumina Top-Gate Dielectric QT Phùng, L Völkel, A Piacentini, A Esteki, A Grundmann, H Kalisch, ...
ACS Applied Materials & Interfaces 16 (44), 60541-60547, 2024
2024 Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics A Esteki, S Riazimehr, A Piacentini, H Knoops, B Macco, M Otto, G Rinke, ...
arXiv preprint arXiv:2408.07183, 2024
2024 Flexible CMOS inverters based on transition metal dichalcogenides D Polyushkin, A Piacentini, B Uzlu, A Grundmann, M Heuken, H Kalisch, ...
2023 Low Hysteresis MoS2 -FET Enabled by CVD-Grown h-BN Encapsulation A Piacentini, D Schneider, M Otto, B Canto, Z Wang, A Radenovic, A Kis, ...
2021 Device Research Conference (DRC), 1-2, 2021
2021 Piezoresistive 2D MoS2: pressure sensor simulation and fabrication A PIACENTINI
Politecnico di Milano, 2018
2018 