| Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy K Chen, X Wan, J Wen, W Xie, Z Kang, X Zeng, H Chen, JB Xu ACS nano 9 (10), 9868-9876, 2015 | 328 | 2015 |
| Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy K Chen, X Wan, W Xie, J Wen, Z Kang, X Zeng, H Chen, J Xu Advanced materials 27 (41), 6431-6437, 2015 | 230 | 2015 |
| High responsivity, broadband, and fast graphene/silicon photodetector in photoconductor mode Z Chen, Z Cheng, J Wang, X Wan, C Shu, HK Tsang, HP Ho, JB Xu Advanced Optical Materials 3 (9), 1207-1214, 2015 | 190 | 2015 |
| Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy X Zhang, H Nan, S Xiao, X Wan, X Gu, A Du, Z Ni, K Ostrikov Nature communications 10 (1), 598, 2019 | 166 | 2019 |
| Enhanced optical Kerr nonlinearity of MoS2 on silicon waveguides L Liu, K Xu, X Wan, J Xu, CY Wong, HK Tsang Photonics Research 3 (5), 206-209, 2015 | 166 | 2015 |
| High-quality large-area graphene from dehydrogenated polycyclic aromatic hydrocarbons X Wan, K Chen, D Liu, J Chen, Q Miao, J Xu Chemistry of Materials 24 (20), 3906-3915, 2012 | 145 | 2012 |
| High-responsivity graphene-on-silicon slot waveguide photodetectors J Wang, Z Cheng, Z Chen, X Wan, B Zhu, HK Tsang, C Shu, J Xu Nanoscale 8 (27), 13206-13211, 2016 | 126 | 2016 |
| A Simple Method for Synthesis of High‐Quality Millimeter‐Scale 1T′ Transition‐Metal Telluride and Near‐Field Nanooptical Properties K Chen, Z Chen, X Wan, Z Zheng, F Xie, W Chen, X Gui, H Chen, W Xie, ... Advanced Materials 29 (38), 1700704, 2017 | 125 | 2017 |
| Synthesis and characterization of metallic Janus MoSH monolayer X Wan, EZ Chen, J Yao, M Gao, X Miao, S Wang, Y Gu, S Xiao, R Zhan, ... ACS nano 15 (12), 20319-20331, 2021 | 89 | 2021 |
| Epitaxial stitching and stacking growth of atomically thin transition‐metal dichalcogenides (TMDCs) heterojunctions K Chen, X Wan, J Xu Advanced Functional Materials 27 (19), 1603884, 2017 | 84 | 2017 |
| Shape-Uniform, High-Quality Monolayered MoS2 Crystals for Gate-Tunable Photoluminescence X Zhang, H Nan, S Xiao, X Wan, Z Ni, X Gu, K Ostrikov ACS Applied Materials & Interfaces 9 (48), 42121-42130, 2017 | 67 | 2017 |
| Controlled Electrochemical Deposition of Large‐Area MoS2 on Graphene for High‐Responsivity Photodetectors X Wan, K Chen, Z Chen, F Xie, X Zeng, W Xie, J Chen, J Xu Advanced Functional Materials 27 (19), 1603998, 2017 | 63 | 2017 |
| Growth of Large-Scale, Large-Size, Few-Layered α-MoO3 on SiO2 and Its Photoresponse Mechanism Y Wang, X Du, J Wang, M Su, X Wan, H Meng, W Xie, J Xu, P Liu ACS applied materials & interfaces 9 (6), 5543-5549, 2017 | 58 | 2017 |
| In situ ultrafast and patterned growth of transition metal dichalcogenides from inkjet‐printed aqueous precursors X Wan, X Miao, J Yao, S Wang, F Shao, S Xiao, R Zhan, K Chen, X Zeng, ... Advanced Materials 33 (16), 2100260, 2021 | 50 | 2021 |
| Interface engineering for CVD graphene: current status and progress X Wan, K Chen, J Xu Small 10 (22), 4443-4454, 2014 | 38 | 2014 |
| Enhanced performance and fermi-level estimation of coronene-derived graphene transistors on self-assembled monolayer modified substrates in large areas X Wan, K Chen, J Du, D Liu, J Chen, X Lai, W Xie, J Xu The Journal of Physical Chemistry C 117 (9), 4800-4807, 2013 | 37 | 2013 |
| Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature K Chen, X Wan, D Liu, Z Kang, W Xie, J Chen, Q Miao, J Xu Nanoscale 5 (13), 5784-5793, 2013 | 35 | 2013 |
| Quantitative analysis of scattering mechanisms in highly crystalline CVD MoS2 through a self-limited growth strategy by interface engineering X Wan, K Chen, W Xie, J Wen, H Chen, JB Xu Small (Weinheim an der Bergstrasse, Germany) 12 (4), 438-445, 2016 | 32 | 2016 |
| Controllable modulation of the electronic properties of graphene and silicene by interface engineering and pressure K Chen, X Wan, JB Xu Journal of Materials Chemistry C 1 (32), 4869-4878, 2013 | 29 | 2013 |
| Facet-dependent property of sequentially deposited perovskite thin films: chemical origin and self-annihilation T Zhang, M Long, K Yan, X Zeng, F Zhou, Z Chen, X Wan, K Chen, P Liu, ... ACS Applied Materials & Interfaces 8 (47), 32366-32375, 2016 | 22 | 2016 |
Jian-Bin XU 许建斌Chinese University of Hong Kong (CUHK); Shenzhen Institutes of Advanced Technology (SIAT), CASПотвърден имейл адрес: ee.cuhk.edu.hk
