Low defect density and small I− V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2 W Hao, Q He, K Zhou, G Xu, W Xiong, X Zhou, G Jian, C Chen, X Zhao, ...
Applied Physics Letters 118 (4), 2021
144 2021 Toward emerging gallium oxide semiconductors: A roadmap Y Yuan, W Hao, W Mu, Z Wang, X Chen, Q Liu, G Xu, C Wang, H Zhou, ...
Fundamental Research 1 (6), 697-716, 2021
105 2021 Fast Switching 2 O3 Power MOSFET With a Trench-Gate Structure H Dong, S Long, H Sun, X Zhao, Q He, Y Qin, G Jian, X Zhou, Y Yu, ...
IEEE Electron Device Letters 40 (9), 1385-1388, 2019
61 2019 Over 1 GW/cm2 Vertical Ga2 O3 Schottky Barrier Diodes Without Edge Termination Q He, W Hao, X Zhou, Y Li, K Zhou, C Chen, W Xiong, G Jian, G Xu, ...
IEEE Electron Device Letters 43 (2), 264-267, 2021
56 2021 Realizing high-performance β-Ga₂O₃ MOSFET by using variation of lateral doping: a TCAD study X Zhou, Q Liu, G Xu, K Zhou, X Xiang, Q He, W Hao, G Jian, X Zhao, ...
IEEE Transactions on Electron Devices 68 (4), 1501-1506, 2021
55 2021 Improved Vertical β-Ga2 O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension W Hao, F Wu, W Li, G Xu, X Xie, K Zhou, W Guo, X Zhou, Q He, X Zhao, ...
IEEE Transactions on Electron Devices 70 (4), 2129-2134, 2023
47 2023 Double-Barrier β-Ga2 O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current W Xiong, X Zhou, G Xu, Q He, G Jian, C Chen, Y Yu, W Hao, X Xiang, ...
IEEE Electron Device Letters 42 (3), 430-433, 2021
47 2021 Selective high-resistance zones formed by oxygen annealing for-GaO Schottky diode applications Q He, X Zhou, Q Li, W Hao, Q Liu, Z Han, K Zhou, C Chen, J Peng, G Xu, ...
IEEE Electron Device Letters 43 (11), 1933-1936, 2022
40 2022 2.6 kV NiO/Ga2 O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability W Hao, Q He, X Zhou, X Zhao, G Xu, S Long
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
38 2022 High-Performance Vertical β-Ga2 O3 Schottky Barrier Diodes Featuring P-NiO JTE with Adjustable Conductivity W Hao, F Wu, W Li, G Xu, X Xie, K Zhou, W Guo, X Zhou, Q He, X Zhao, ...
2022 International Electron Devices Meeting (IEDM), 9.5. 1-9.5. 4, 2022
31 2022 2.7 kV Low Leakage Vertical PtOx /β -Ga2 O3 Schottky Barrier Diodes With Self-Aligned Mesa Termination Z Han, G Jian, X Zhou, Q He, W Hao, J Liu, B Li, H Huang, Q Li, X Zhao, ...
IEEE Electron Device Letters 44 (10), 1680-1683, 2023
30 2023 Normally-off β-Ga2 O3 Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed-Gate X Zhou, Q Liu, W Hao, G Xu, S Long
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
28 2022 Self-Powered p-NiO/n-Ga2 O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage M Ding, W Hao, S Yu, Y Liu, Y Zou, G Xu, X Zhao, X Hou, S Long
IEEE Electron Device Letters 44 (2), 277-280, 2022
27 2022 Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtOx/β-Ga2O3 Schottky barrier diodes G Jian, W Hao, Z Shi, Z Han, K Zhou, Q Liu, Q He, X Zhou, C Chen, ...
Journal of Physics D: Applied Physics 55 (30), 304003, 2022
16 2022 β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings Q He, W Hao, Q Li, Z Han, S He, Q Liu, X Zhou, G Xu, S Long
Chinese Physics B 32 (12), 128507, 2023
10 2023 Unintentional doping effect in Si-doped MOCVD β -Ga2 O3 films: Shallow donor states X Xiang, LH Li, C Chen, G Xu, F Liang, P Tan, X Zhou, W Hao, X Zhao, ...
Science China Materials 66 (2), 748-755, 2023
9 2023 -GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter W Guo, G Jian, W Hao, F Wu, K Zhou, J Du, X Zhou, Q He, Z Yu, X Zhao, ...
IEEE Journal of the Electron Devices Society 10, 933-941, 2022
9 2022 Vertical β-Ga2O3 power electronics G Xu, F Wu, Q Liu, Z Han, W Hao, J Zhou, X Zhou, S Yang, S Long
J. Semicond 44 (7), 070301, 2023
8 2023 Vertical Vertical β -Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination J Wen, W Hao, Z Han, F Wu, Q Li, J Liu, Q Liu, X Zhou, G Xu, S Yang, ...
IEEE Transactions on Electron Devices 71 (3), 1606-1617, 2024
6 2024 Demonstration of β-Ga2 O3 Heterojunction Gate Field-Effect Rectifier Q Liu, X Zhou, Q He, W Hao, X Zhao, M Hua, G Xu, S Long
IEEE Transactions on Electron Devices 70 (7), 3762-3767, 2023
6 2023