| The effect of intrinsic crumpling on the mechanics of free-standing graphene RJT Nicholl, HJ Conley, NV Lavrik, I Vlassiouk, YS Puzyrev, VP Sreenivas, ... Nature communications 6 (1), 8789, 2015 | 273 | 2015 |
| Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment AKM Newaz, YS Puzyrev, B Wang, ST Pantelides, KI Bolotin Nature Communications 3 (1), 734, 2012 | 176 | 2012 |
| Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ... Journal of Applied Physics 109 (3), 2011 | 163 | 2011 |
| Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on nuclear science 60 (6), 4080-4086, 2013 | 123 | 2013 |
| Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015 | 116 | 2015 |
| Process dependence of proton-induced degradation in GaN HEMTs T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ... IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010 | 114 | 2010 |
| Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011 | 99 | 2011 |
| Strain enhanced defect reactivity at grain boundaries in polycrystalline graphene B Wang, Y Puzyrev, ST Pantelides Carbon 49 (12), 3983-3988, 2011 | 92 | 2011 |
| Defects and doping and their role in functionalizing graphene ST Pantelides, Y Puzyrev, L Tsetseris, B Wang MRS bulletin 37 (12), 1187-1194, 2012 | 88 | 2012 |
| Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ... Applied Physics Letters 99 (20), 2011 | 67 | 2011 |
| Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions T Roy, YS Puzyrev, BR Tuttle, DM Fleetwood, RD Schrimpf, DF Brown, ... Applied Physics Letters 96 (13), 2010 | 62 | 2010 |
| Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors YS Puzyrev, BR Tuttle, RD Schrimpf, DM Fleetwood, ST Pantelides Applied Physics Letters 96 (5), 2010 | 62 | 2010 |
| Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors YS Puzyrev, RD Schrimpf, DM Fleetwood, ST Pantelides Applied Physics Letters 106 (5), 2015 | 61 | 2015 |
| Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs Y Puzyrev, S Mukherjee, J Chen, T Roy, M Silvestri, RD Schrimpf, ... IEEE Transactions on Electron Devices 61 (5), 1316-1320, 2014 | 58 | 2014 |
| Excess carbon in silicon carbide X Shen, MP Oxley, Y Puzyrev, BR Tuttle, G Duscher, ST Pantelides Journal of Applied Physics 108 (12), 2010 | 47 | 2010 |
| Room-temperature diffusive phenomena in semiconductors: The case of AlGaN KH Warnick, Y Puzyrev, T Roy, DM Fleetwood, RD Schrimpf, ... Physical Review B—Condensed Matter and Materials Physics 84 (21), 214109, 2011 | 46 | 2011 |
| Hot-carrier degradation in GaN HEMTs due to substitutional iron and its complexes S Mukherjee, Y Puzyrev, J Chen, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Electron Devices 63 (4), 1486-1494, 2016 | 43 | 2016 |
| Interlaced crystals having a perfect Bravais lattice and complex chemical order revealed by real-space crystallography X Shen, EA Hernández-Pagan, W Zhou, YS Puzyrev, JC Idrobo, ... Nature Communications 5 (1), 5431, 2014 | 42 | 2014 |
| Reliability of III–V devices–The defects that cause the trouble ST Pantelides, Y Puzyrev, X Shen, T Roy, S DasGupta, BR Tuttle, ... Microelectronic engineering 90, 3-8, 2012 | 41 | 2012 |
| High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs J Chen, YS Puzyrev, EX Zhang, DM Fleetwood, RD Schrimpf, AR Arehart, ... IEEE Transactions on Device and Materials Reliability 16 (3), 282-289, 2016 | 38 | 2016 |
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityПотвърден имейл адрес: vanderbilt.edu
