Sub-10 nm Nanofabrication via Nanoimprint Directed Self-Assembly of Block Copolymers SM Park, X Liang, BD Harteneck, TE Pick, N Hiroshiba, Y Wu, BA Helms, ...
ACS nano 5 (11), 8523-8531, 2011
173 2011 C60 field effect transistor with electrodes modified by La@ C82 N Hiroshiba, K Tanigaki, R Kumashiro, H Ohashi, T Wakahara, T Akasaka
Chemical physics letters 400 (1-3), 235-238, 2004
58 2004 Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of field effect transistor H Ohashi, K Tanigaki, R Kumashiro, S Sugihara, S Hiroshiba, S Kimura, ...
Applied physics letters 84 (4), 520-522, 2004
36 2004 Energy-level alignments and photo-induced carrier processes at the heteromolecular interface of quaterrylene and N, N′-dioctyl-3, 4, 9, 10-perylenedicarboximide N Hiroshiba, R Hayakawa, T Chikyow, Y Yamashita, H Yoshikawa, ...
Physical Chemistry Chemical Physics 13 (13), 6280-6285, 2011
35 2011 Broadband terahertz spectroscopy of cellulose nanofiber-reinforced polypropylenes S Ariyoshi, S Hashimoto, S Ohnishi, S Negishi, H Mikami, K Hayashi, ...
Materials Science and Engineering: B 265, 115000, 2021
30 2021 Single‐Electron Tunneling through Molecular Quantum Dots in a Metal‐Insulator‐Semiconductor Structure R Hayakawa, N Hiroshiba, T Chikyow, Y Wakayama
Advanced Functional Materials 21 (15), 2933-2937, 2011
26 2011 Selection of di (meth) acrylate monomers for low pollution of fluorinated mold surfaces in ultraviolet nanoimprint lithography M Nakagawa, K Kobayashi, AN Hattori, S Ito, N Hiroshiba, S Kubo, ...
Langmuir 31 (14), 4188-4195, 2015
25 2015 Elemental depth profiles and plasma etching rates of positive-tone electron beam resists after sequential infiltration synthesis of alumina Y Ozaki, S Ito, N Hiroshiba, T Nakamura, M Nakagawa
Japanese Journal of Applied Physics 57 (6S1), 06HG01, 2018
18 2018 Discharge of viscous UV-curable resin droplets by screen printing for UV nanoimprint lithography A Tanabe, T Uehara, K Nagase, H Ikedo, N Hiroshiba, T Nakamura, ...
Japanese Journal of Applied Physics 55 (6S1), 06GM01, 2016
18 2016 Strain-effect for controlled growth mode and well-ordered structure of quaterrylene thin films R Hayakawa, A Turak, XN Zhang, N Hiroshiba, H Dosch, T Chikyow, ...
The Journal of chemical physics 133 (3), 2010
18 2010 ACS Nano JH Park, XG Liang, BD Harteneck, TE Pick, N Hiroshiba, Y Wu
2015 6511, 2008
18 2008 Anisotropic oxygen reactive ion etching for removing residual layers from 45 nm-width imprint patterns T Uehara, S Kubo, N Hiroshiba, M Nakagawa
Journal of Photopolymer Science and Technology 29 (2), 201-208, 2016
17 2016 Growth and structural characterization of molecular superlattice of quaterrylene and N, N′-dioctyl-3, 4, 9, 10-perylenedicarboximide N Hiroshiba, R Hayakawa, M Petit, T Chikyow, K Matsuishi, Y Wakayama
Organic electronics 10 (5), 1032-1036, 2009
16 2009 Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator N Hiroshiba, R Kumashiro, K Tanigaki, T Takenobu, Y Iwasa, K Kotani, ...
Applied physics letters 89 (15), 2006
16 2006 Towards electrically driven organic semiconductor laser with field-effective transistor structure T Kanagasekaran, H Shimotani, K Kasai, S Onuki, RD Kavthe, ...
arXiv preprint arXiv:1903.08869, 2019
15 2019 Viscosity range of UV-curable resins usable in print and imprint method for preparing sub-100-nm-wide resin patterns T Uehara, A Onuma, A Tanabe, K Nagase, H Ikedo, N Hiroshiba, ...
Journal of Vacuum Science & Technology B 34 (6), 2016
15 2016 Ambipolar carrier transport in hetero-layered organic transistors consisting of quaterrylene and N, N′-dioctyl-3, 4, 9, 10-perylenedicarboximide N Hiroshiba, R Hayakawa, T Chikyow, K Matsuishi, Y Wakayama
Organic Electronics 12 (8), 1336-1340, 2011
15 2011 Size-dependent filling behavior of uv-curable di (meth) acrylate resins into carbon-coated anodic aluminum oxide pores of around 20 nm M Nakagawa, A Nakaya, Y Hoshikawa, S Ito, N Hiroshiba, T Kyotani
ACS applied materials & interfaces 8 (44), 30628-30634, 2016
14 2016 Structural analysis and transistor properties of hetero-molecular bilayers N Hiroshiba, R Hayakawa, M Petit, T Chikyow, K Matsuishi, Y Wakayama
Thin Solid Films 518 (2), 441-443, 2009
14 2009 Stress Release Drives Growth Transition of Quaterrylene Thin Films on SiO2 Surfaces R Hayakawa, XN Zhang, H Dosch, N Hiroshiba, T Chikyow, Y Wakayama
The Journal of Physical Chemistry C 113 (6), 2197-2199, 2009
14 2009