Следене
Takuma Kobayashi
Takuma Kobayashi
Associate Professor, Osaka University
Потвърден имейл адрес: prec.eng.osaka-u.ac.jp - Начална страница
Заглавие
Позовавания
Позовавания
Година
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
T Kobayashi, K Harada, Y Kumagai, F Oba, Y Matsushita
Journal of Applied Physics 125 (12), 2019
882019
Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation
T Kobayashi, T Okuda, K Tachiki, K Ito, Y Matsushita, T Kimoto
Applied Physics Express 13 (9), 091003, 2020
672020
Energetics and electronic structure of native point defects in α-Ga2O3
T Kobayashi, T Gake, Y Kumagai, F Oba, Y Matsushita
Applied Physics Express 12 (9), 091001, 2019
602019
Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface
T Kobayashi, Y Matsushita
Journal of Applied Physics 126 (14), 2019
592019
Carbon ejection from a SiO2/SiC (0001) interface by annealing in high-purity Ar
T Kobayashi, T Kimoto
Applied Physics Letters 111 (6), 2017
462017
Formation of high-quality SiC (0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing
K Tachiki, M Kaneko, T Kobayashi, T Kimoto
Applied physics express 13 (12), 121002, 2020
452020
Interface state density of SiO2/p-type 4H-SiC (0001),(112¯),(11¯ 00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes
T Kobayashi, S Nakazawa, T Okuda, J Suda, T Kimoto
Applied Physics Letters 108 (15), 2016
442016
Short-channel effects in SiC MOSFETs based on analyses of saturation drain current
K Tachiki, T Ono, T Kobayashi, T Kimoto
IEEE Transactions on Electron Devices 68 (3), 1382-1384, 2021
422021
Estimation of threshold voltage in SiC short-channel MOSFETs
K Tachiki, T Ono, T Kobayashi, H Tanaka, T Kimoto
IEEE Transactions on Electron Devices 65 (7), 3077-3080, 2018
392018
Carbon dangling-bond center (carbon Pb center) at 4H-SiC (0001)/SiO2 interface
T Umeda, T Kobayashi, M Sometani, H Yano, Y Matsushita, S Harada
Applied physics letters 116 (7), 2020
352020
Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing
T Kobayashi, K Tachiki, K Ito, T Kimoto
Applied Physics Express 12 (3), 031001, 2019
312019
Progress and future challenges of SiC power devices and process technology
T Kimoto, H Niwa, N Kaji, T Kobayashi, Y Zhao, S Mori, M Aketa
2017 IEEE international electron devices meeting (IEDM), 9.5. 1-9.5. 4, 2017
282017
Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
T Kobayashi, J Suda, T Kimoto
AIP Advances 7 (4), 2017
242017
Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing
T Okuda, T Kobayashi, T Kimoto, J Suda
Applied Physics Express 9 (5), 051301, 2016
202016
Effect of quantum confinement on the defect-induced localized levels in 4H-SiC (0001)/SiO2 systems
K Ito, T Kobayashi, T Kimoto
Journal of Applied Physics 128 (9), 2020
192020
Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing
Y Wada, H Mizobata, M Nozaki, T Kobayashi, T Hosoi, T Kachi, T Shimura, ...
Applied Physics Letters 120 (8), 2022
172022
Interface properties of NO-annealed 4H-SiC (0001),(112¯), and (11¯ 00) MOS structures with heavily doped p-bodies
T Kobayashi, S Nakazawa, T Okuda, J Suda, T Kimoto
Journal of Applied Physics 121 (14), 2017
172017
Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth
H Mizobata, M Nozaki, T Kobayashi, T Hosoi, T Shimura, H Watanabe
Japanese journal of applied physics 61 (SC), SC1034, 2022
142022
Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study
T Kobayashi, T Shimura, H Watanabe
Journal of Applied Physics 134 (14), 2023
102023
Improvement of interface properties in SiC (0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing
H Fujimoto, T Kobayashi, T Shimura, H Watanabe
Applied Physics Express 16 (7), 074004, 2023
102023
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